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    4891 TRANSISTOR Search Results

    4891 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    4891 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4018 datasheet

    Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
    Text: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 4018 datasheet ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA marking 312 SOT23 zetex PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541 PDF

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 PDF

    complementary npn-pnp power transistors

    Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors PDF

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


    Original     		ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W PDF

    TS16949

    Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA D-81541 A1103-04, TS16949 ZXTP03200BG ZXTP03200BGTA marking sot223 GY PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA PDF

    PNP 200V 2A SOT89

    Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
    Text: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


    Original     		ZXTP03200BG OT223 -200V -160mV OT223 D-81541 A1103-04, PDF

    3554M

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 3554M PDF

    401745

    Abstract: cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal
    Text: Cypress Semiconductor Product Qualification Report QTP# 000505 VERSION 2.0 November, 2000 1 Meg Fast Asynchronous SRAM R52FD-3 Technology, Fab 4 CY7C1021BV33 CY7C1019BV33 64K x 16 Static RAM 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		R52FD-3 CY7C1021BV33 CY7C1019BV33 CY7C1021BV33, N5V18-BAI CY62145V18-BAI 401745 cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal PDF

    Untitled

    Abstract: No abstract text available
    Text: AL8400EV1 EVALUATION BOARD USER GUIDE DESCRIPTION The AL8400EV1, Figure 1, is a double sided evaluation board for the AL8400 linear LED driver. The evaluation board is preset to drive 150mA through the LED string, the maximum number of which depends on their total forward voltage drop.


    Original     		AL8400EV1 AL8400EV1, AL8400 150mA 150mA. 4-18VDC AL8400EV3154 D-81541 A1103-04, PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXLD381EV1 USER GUIDE Description The ZXLD381 is a single or multi cell LED driver designed for applications requiring step-up voltage conversion from a very low input voltage and on/off enable control. The IC generates constant current pulses that are ideal for driving


    Original     		ZXLD381EV1 ZXLD381 OT23-3 D-81541 A1103-04, PDF

    A88L

    Abstract: WSR3R0500FEA
    Text: Designed and produced by Diodes Zetex Applications team, Oldham, UK ZXLD1370EV3 EVALUATION BOARD USER GUIDE 9 AMP HIGH CURRENT BUCK LED DRIVER APPLICATION Fig. 1 ZXLD1370EV3 Evaluation board connection diagram Issue 1 – February 2011 Diodes Incorporated, 2011


    Original     		ZXLD1370EV3 ZXLD1370EV3 TSSOP16L ZXLD1370 DMN3020LK3 co154 D-81541 A1103-04, A88L WSR3R0500FEA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXLD1374EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1374EV1 Evaluation board connection diagram Issue 1 – September 2010


    Original     		ZXLD1374EV1 125mV ZXLD1374EV1 TSSOP20L- DFN3030 ZXLD1374 SBR3U100LP PDF

    GD 241 C

    Abstract: No abstract text available
    Text: ZXLD1370EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1370EV1 Evaluation board connection diagram Issue 2 – Sept 2010


    Original     		ZXLD1370EV1 125mV D-81541 A1103-04, GD 241 C PDF

    Untitled

    Abstract: No abstract text available
    Text: 14-18 series-connected LEDs AL9910EV4 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV4 Evaluation board connection diagram Issue 4 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV4 DESCRIPTION The AL9910EV4 is an offline non-isolated LED driver Evaluaton board designed to work on both 115V and


    Original     		AL9910EV4 AL9910EV4 between14 180mA. 180mA D-81541 PDF

    led 230v application

    Abstract: No abstract text available
    Text: AL9910EV5 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV5 evaluation board connection diagram Issue 3 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV5 DESCRIPTION The AL9910EV5 is an offline non-isolated LED driver Evaluation board designed to work on both 115V and


    Original     		AL9910EV5 AL9910EV5 240mA. 240mA A1103-04, D-81541 led 230v application PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400EV5 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV5 is designed to drive one or two 3W LEDs at a constant


    Original     		ZXSC400EV5 ZXSC400 OT23-6 700mA A1103-04, D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC310EV5 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXSC310 is a single or multi cell The ZXSC310EV5 is configured as a LED driver in an SOT23-5 package. The buck-boost converter to drive a 1W LED use of an external switching BJT or from 3 NiCd/NiMH or Alkaline batteries.


    Original     		ZXSC310EV5 ZXSC310 OT23-5 350mA ZXSC310EV5 D-81541 A1103-04, PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400EV7 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV7 is designed to drive one or two 3W LEDs at a constant


    Original     		ZXSC400EV7 ZXSC400 OT23-6 700mA A1103-04, D-81541 PDF

    MU4893

    Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
    Text: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point


    OCR Scan     		MU4891 MU4894 MU4893 MU4892 MU4893 MU4894 MU4891 MU4892 EB20 unijunction application note 100-C PDF

    4891 TRANSISTOR

    Abstract: transistor MOSFET 924 ON 4892 mosfet p60n
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 60 N 06 H D HDTMOS E-FET ™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOSPOWER FET 60 AMPERES 60 VOLTS RDS on = 0014 OHM This advanced h ig h -c e ll density HDTMOS power FET is


    OCR Scan     		MTP60N06HD 4891 TRANSISTOR transistor MOSFET 924 ON 4892 mosfet p60n PDF