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    48Z18 Search Results

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    48Z18 Price and Stock

    STMicroelectronics M48Z18-100PC1

    NVRAM NVSRAM Parallel 64K-Bit 5V 28-Pin PCDIP Tube - Rail/Tube (Alt: M48Z18-100PC1)
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    Avnet Americas M48Z18-100PC1 Tube 24 Weeks 240
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    • 1000 $14.36438
    • 10000 $13.96537
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    Mouser Electronics M48Z18-100PC1
    • 1 $22.33
    • 10 $19.4
    • 100 $17.31
    • 1000 $15.97
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    Newark M48Z18-100PC1 Bulk 338 1
    • 1 $22.31
    • 10 $19.81
    • 100 $17.58
    • 1000 $16.76
    • 10000 $16.76
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    STMicroelectronics M48Z18-100PC1 1
    • 1 $21.88
    • 10 $19.01
    • 100 $16.96
    • 1000 $15.65
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    Bristol Electronics M48Z18-100PC1 308
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    M48Z18-100PC1 5
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    M48Z18-100PC1 4 1
    • 1 $13.2
    • 10 $13.2
    • 100 $13.2
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    TME M48Z18-100PC1 7 1
    • 1 $23.17
    • 10 $17.8
    • 100 $17.8
    • 1000 $17.8
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    ComSIT USA M48Z18-100PC1 433
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    Avnet Silica M48Z18-100PC1 1,200 17 Weeks 12
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    EBV Elektronik M48Z18-100PC1 240 25 Weeks 12
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    SGS Thomson M48Z18-100MH1

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    Bristol Electronics M48Z18-100MH1 127
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    STMicroelectronics MK48Z18B-15

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    Bristol Electronics MK48Z18B-15 22
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    STMicroelectronics M48Z18100PC1

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    Bristol Electronics M48Z18100PC1 10
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    STMicroelectronics MK48Z18B-20

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    Bristol Electronics MK48Z18B-20 8
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    48Z18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48Z08

    Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
    Text: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic


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    PDF 55Plastic 300-mil 600-mil 350-mil 48Z08 X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68

    48t18

    Abstract: 48T08 41T56 48T59Y 48Z08 48t86 48T128Y 41T5 D2167D-2 70NS
    Text: GENERAL INDEX ZEROPOW ER M 48Z02 M 48Z12 16 Kb x8 , 7 0 /1 50/200 n s, 5V + 1 0 /- 5 % , 10 year battery 1 6 K b (x 8 ), 7 0 /1 5 0 /2 0 0 n s ,5 V ± 10% , 10 year b a tte ry . 9 M 48Z08 M 48Z18 6 4 Kb (x8), 100ns, 5 V + 1 0 /-5 % . 11 year battery


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    PDF 48Z02 48Z12 48Z08 48Z18 48Z58 48Z58Y 48Z59 48Z59Y 48Z35 48Z35Y 48t18 48T08 41T56 48T59Y 48t86 48T128Y 41T5 D2167D-2 70NS

    L-1019

    Abstract: DS1225 M48Z08 M48Z18 SOH28 RAM circuit diagram
    Text: w # SCS -THOMSON M48Z08 M 48Z18 k7# IMtlMmitgïïïMMtêS 64Kb 8K • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME - AUTOMATIC POWER-FAIL CHIP DESELECT and


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    PDF M48Z03 M48Z08: M48Z18: DS1225 SOH28 PCDIP28 L-1019 M48Z08 M48Z18 SOH28 RAM circuit diagram

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    ELAP CM 72

    Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
    Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3


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    M46Z08

    Abstract: M48Z08 M48Z18 MK48Z08 SOH28
    Text: / T 7 M48Z08 48Z18 S G S -T H O M S O N CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and


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    PDF M48Z08 M48Z18 M48Z18 MK48Z08 SOH28 M48Z08, 7T2T237 M46Z08 SOH28

    48Z18

    Abstract: 48Z1 48z08
    Text: F Z J SGS-THOMSON M48Z08 ^ 7 i K» ô [iL[imMO(êS_ 48Z18 64Kb (8K x 8) ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE


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    PDF M48Z08 M48Z18 M48Z08: M48Z18: SOH28 PCDIP28 48Z18 48Z1 48z08

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    Abstract: No abstract text available
    Text: M48Z08 A 7 # . [M»[g[LI gmMD(gS_ 48Z18 / T T S G S - T H O M S O N 64Kb (8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE


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    PDF M48Z08 M48Z18 M48Z08: M48Z18: PCDIP28 SOH28

    48Z18

    Abstract: 48Z08
    Text: r z 7 S C S -T H O M S O N “ 7# M K 4 8 Z 0 8 .1 8 M K 4 8 Z 0 9 .1 9 CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POW ER SRAM, POW ER-FAIL CO NTRO L CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE TIME.


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    PDF K48Z08/09 K48Z08 48Z18 K48Z08/18 VR030625 48Z08 MK48Z08 100ns 48Z18

    48Z08

    Abstract: MK48Z09 FFD 443
    Text: • [ Z 7 ^ 5 3 7 p o s a g li g ■ T - q k ^ v r Z - _ S G S - T H O M S O N M K 4 8 Z 0 8 / 1 8/ 09 /19 B [ ^ D » i [ L i » i D ( g S _ -55/70/10/15/20 I S G S-TH0MS0N IDE » 8 K X 8 ZEROPOWER SRAM FEATURES ■ INTEGRATED ULTRA LOW POWER SRAM,


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    PDF MK48Z08/09 K48Z18/19-4 48Z08 MK48Z09 FFD 443