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    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for


    OCR Scan     		HYM581610 HY5117100 22//F HYM581610M/LM/TM/LTM 350fB 891MAX. 08ffi HYM581610TM/LTM 361MAX. PDF

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl PDF

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


    OCR Scan     		HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ PDF

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU PDF

    hy5116100

    Abstract: No abstract text available
    Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		HY51161OOA HY5116100A HY51161 C1801 4b750Ã 1AD19-10-MAYÃ HY5116100AJ HY51161OOASLJ hy5116100 PDF

    T23N

    Abstract: au1017 4100 dram HYS14400 IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		4b750Ã DG0Q333 HY514400 HYS14400 M1A1200A-MAY91 -23-n FEA11 T23N au1017 4100 dram IPC 4104 PDF

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70 PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a


    OCR Scan     		HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I, PDF

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY62256A speed-55/70/85/100ns 1DC01-11-MAY94 HY62256AP HY62256ALP HY62256ALLP PDF

    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4800B HY51V4800B 1AC18-00-MA HY51V4800BJC HY51V4800BSUC HY51V4800BTC HY51V4800BLTC PDF

    Untitled

    Abstract: No abstract text available
    Text: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116404A HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404AR PDF

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I PDF

    HY5118160JC70

    Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
    Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5118160 16-bit 16-bit. 0-629CB1 10-2g2) 016B3 000M750 HY5118160JC70 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY514100A HY514100A 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT PDF

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed


    OCR Scan     		256Kx32bit b75Qfl DDD5370 1SC01-01-NOV96 HY588321 -01-NOV96 PDF

    Untitled

    Abstract: No abstract text available
    Text: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in


    OCR Scan     		x8/x16 HYCFLF16004 16Mbit 4b750flfl 1FC08-01-MAR96 PDF