4B75DFLA Search Results

4B75DFLA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
hym536810 Abstract: HYM53 Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.	OCR Scan	HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53	PDF
721 KXC Abstract: moc 3048 Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that	OCR Scan	HY62V8100A 128Kx 55/70/85/100ns -100/120/150/200ns t00-H 792e0 1DD04-11-MAY95 721 KXC moc 3048	PDF
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC	PDF
Untitled Abstract: No abstract text available Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands	OCR Scan	HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting often HY5117400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. O.Zty? decoupling capacitor is mounted for each	OCR Scan	HYM540410 40-bit HY5117400 HYM54041OM/LM/TM/LTM HYM54041OMG/LMG/TMG/LTMG HYM540410M/LM HYM540410TM/LTM 1CE09-00-MAY93	PDF
Untitled Abstract: No abstract text available Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit	OCR Scan	36-bit HYM536810A HY5117400A HY514100A HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG HYM536810A/AL HYM536810AT/ALT 4b75DflA	PDF
Untitled Abstract: No abstract text available Text: • HYUNDAI HYM536220A W-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^Fdecoupling	OCR Scan	HYM536220A 36-bit HY5118160B HY531000A HYM536220AW/LW HYM536220AWG/LWG back-14) DQ0-DQ35)	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.	OCR Scan	16-bit 16bits 1VC02-00-MAY95 HY5216257 525mil 64pin 4b750flfl 1VC02-00-MAY9S HY5216256GE	PDF