45VM32160D
Abstract: No abstract text available
Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42/45VM32160D
32Bits
IS42/45VM32160D
-40oC
16Mx32
IS42VM32160D-6BLI
IS42VM32160D-75BLI
90-ball
45VM32160D
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M366S6453DTS
Abstract: No abstract text available
Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S6453DTS
PC133/PC100
M366S6453DTS
64Mx64
32Mx8,
400mil
168-pin
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b1a12
Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit
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PC133/100
M390S2950MTU
M390S2950MTU
128Mx72
128Mx4,
128Mx4
400mil
18bits
b1a12
M390S2950MTU-C1H
M390S2950MTU-C1L
M390S2950MTU-C75
PC133 registered reference design
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M374S6453CTS
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M374S6453CTS
M374S6453CTS
64Mx72
32Mx8,
400mil
168-pin
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M390S3320DT1-C7A
Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range
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PC133
M390S3320DT1
M390S3320DT1
32Mx72
32Mx4,
M390S3320DT1-C7C
24-pin
133MHz
M390S3320DT1-C7A
M390S3320DT1-C7A
M390S3320DT1-C7C
PC133 registered reference design
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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M374S3253ATS
Abstract: M374S3253CTU
Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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M374S3253CTU
PC133/PC100
M374S3253ATS
32Mx72
32Mx8,
M374S3253CTU
400mil
168-pin
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M390S2858DTU
Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked
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M390S2858DTU
PC133/PC100
M390S2858DTU
128Mx72
128Mx4,
128Mx4
400mil
18-bits
M390S2858DTU-C1H
M390S2858DTU-C1L
M390S2858DTU-C7A
M390S2858DTU-C7C
10D4L
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous
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PC133/PC100
M374S6453DTS
M374S6453DTS
64Mx72
32Mx8,
400mil
168-pin
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HY57V641620B
Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.
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HY57V651620B
16Bit
HY57V641620B
864-bit
576x16.
400mil
54pin
HY57V651620B
HY57V651620BLTC-55
HY57V651620BTC-10
HY57V651620BTC-10P
HY57V651620BTC-10S
HY57V651620BTC-55
HY57V651620BTC-6
HY57V651620BTC-7
HY57V651620BTC-75
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M377S2953MT3
Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit
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PC100
M377S2953MT3
M377S2953MT3
128Mx72
64Mx8,
64Mx8
400mil
18bits
M377S2953MT3-C1H
M377S2953MT3-C1L
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M374S1623DT0
Abstract: M374S1623DT0-C7A
Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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M374S1623DT0
PC133
M374S1623DT0
16Mx72
400mil
M374S1623DT0-C7A
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K4S561632C
Abstract: M464S1654CTS
Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with
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M464S1654CTS
PC133/PC100
M464S1654CTS
16Mx64
16Mx16,
144-pin
100MHz
K4S561632C
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b1a12
Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit
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M390S6450DTU
PC133/PC100
M390S6450DTU
64Mx72
64Mx4,
64Mx4
400mil
18bits
b1a12
M390S6450DTU-C7A
M390S6450DTU-C1H
M390S6450DTU-C1L
M390S6450DTU-C7C
PC133 registered reference design
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M390S3253CTU
Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous
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M390S3253CTU
PC133/PC100
M390S3253CTU
32Mx72
32Mx8,
32Mx8
400mil
18-bits
M390S3253CTU-C1H
M390S3253CTU-C1L
M390S3253CTU-C7A
M390S3253CTU-C7C
PC133 registered reference design
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Untitled
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous
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PC133/PC100
M374S6453DTS
M374S6453DTS
64Mx72
32Mx8,
400mil
168-pin
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SM32200K
Abstract: IS42SM32200K
Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42SM/RM/VM32200K
32Bits
IS42SM/RM/VM32200K
200K-6BLI
IS42SM32200K-75BLI
90-ball
-40oC
2Mx32
IS42RM32200K-6BLI
SM32200K
IS42SM32200K
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IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
IS42RM16160E
IS42VM16160E-75BLI
IS42VM16160E
is42vm16160
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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HY57V281620A
Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16
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HY57V281620A
16bits
HY57V281620A
728bit
152x16
400mil
54pin
HY57V281620ALT-HI
HY57V281620ALT-KI
HY57V281620ALT-PI
HY57V281620ALT-SI
HY57V281620AT-HI
HY57V281620AT-KI
HY57V281620AT-PI
HY57V281620AT-SI
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M366S0824ET0
Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PC100
M366S0824ET0
M366S0824ET0
8Mx64
4Mx16,
400mil
168-pin
M366S0824ET0-C1H
M366S0824ET0-C1L
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HY57V56820BT-H
Abstract: HY57V56820B HY57V56820BT-6 HY57V56820BT-K
Text: HY57V12820 L T 4 Banks x 16M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 16,777,216x8.
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HY57V12820
HY57V56820B
512-Mbit
216x8.
400mil
54pin
HY57V56820BT-H
HY57V56820BT-6
HY57V56820BT-K
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nanya
Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:
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NT128S64VH4A0GM
128MB
16Mx64
16Mx16,
13/9/2TECHNOLOGY
010Max
nanya
NT128S64VH4A0GM
NT128S64VH4A0GM-75B
NT128S64VH4A0GM-7K
NT128S64VH4A0GM-8B
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HY57V561620T
Abstract: HY57V561620
Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of
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HY57V561620T
16Bit
HY57V561620
456bit
304x16.
400mil
54pin
HY57V561620T
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