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    4GHZ TRANSISTOR Search Results

    4GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    4GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fujitsu hemt

    Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
    Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


    OCR Scan     		FH40LG 2-12GHz FHC40LG FCSI0598M200 fujitsu hemt fujitsu transistor HEMT fhc40lg 280AM low noise hemt PDF

    2N6617

    Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
    Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101 PDF

    HXTR-5002

    Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz
    Text: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz


    OCR Scan     		HXTR-5002 HXTR-5002 HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz PDF

    fhc40lg

    Abstract: 18GHZ LG 932 fujitsu hemt
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz FCSI0598M200 fhc40lg 18GHZ LG 932 fujitsu hemt PDF

    Untitled

    Abstract: No abstract text available
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz PDF

    08/bup 3110 transistor

    Abstract: No abstract text available
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FHC40LG 2-12GHz 08/bup 3110 transistor PDF

    Low Noise HEMT

    Abstract: Super low noise figure and high associated gain
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain PDF

    fhc40lg

    Abstract: 18GHZ low noise hemt FH40LG
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FH40LG 2-12GHz fhc40lg 18GHZ low noise hemt PDF

    Hewlett-Packard application note 967

    Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
    Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. Hewlett-Packard application note 967 HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor PDF

    ATC520L103KT16T

    Abstract: ATC520L103KT16
    Text: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz


    Original     		GSA504-12 GSA504-12 ATC520L103KT16T ATC520L103KT16 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    AO9T

    Abstract: 2SK1233
    Text: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film


    OCR Scan     		2SK1233 AO9T 2SK1233 PDF

    6943-3

    Abstract: No abstract text available
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		OT343 CFH800 Rn/50 6943-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film


    OCR Scan     		2SK1234 PDF

    GSM repeater circuit using transistor

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 PDF

    2SC2644

    Abstract: 2SC264
    Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SC2644 55MAX. SC-43 961001EAA2' 2SC2644 2SC264 PDF

    BFR360

    Abstract: BFR360T GPS05996
    Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,


    Original     		BFR360T 10dBm VPS05996 P-SC-75 GPS05996 BFR360 BFR360T GPS05996 PDF

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


    Original     		RFHA3944 RF360-2 800MHz 2500MHz -40dBc DS120418 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


    Original     		RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS120418 PDF

    2SC2644

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SC2644 55MAX. SC-43 961001EAA2' 2SC2644 PDF

    RFHA3942

    Abstract: RF360
    Text: RFHA3942 RFHA3942 35W GaN Wideband Power Amplifier 35W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology  Peak Modulated Power >30W


    Original     		RFHA3942 RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS121109 RF360 PDF

    RFHA3944SB

    Abstract: RFHA3944 RF360 IRL214 ha3944
    Text: RFHA3944 RFHA3944 65W GaN Wideband Power Amplifier 65W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology  Peak Modulated Power >65W


    Original     		RFHA3944 RFHA3944 RF360-2 800MHz 2500MHz -42dBc DS121108 RFHA3944SB RF360 IRL214 ha3944 PDF