mask ROM
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH53F4P00 4M Mask ROM Model No.: LHMD09xx Ref No.: NP 176C Issue Date: April 1997 4Mbit, Mask ROM, 5V, 120 ns, 44 SOP, LH53F4P00
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LH53F4P00
LHMD09xx)
mask ROM
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ir transmitter led 880nm
Abstract: "universal remote control" chip LED IR RX mir 3 ir receiver circuit AC97 AN1114 ASDL-3023 ASDL-3023-008 ASDL-3023-021 ASDL-3023-S21
Text: ASDL-3023 IrDA Data Compliant Low Power 4Mbit/s with Remote Control Infrared Transceiver Data Sheet Description Features The ASDL-3023 is a new generation low profile high speed enhanced infrared IR transceiver module that provides the capability of (1) interface between logic
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ASDL-3023
ASDL-3023
AV02-0054EN
ir transmitter led 880nm
"universal remote control" chip
LED IR RX
mir 3 ir receiver circuit
AC97
AN1114
ASDL-3023-008
ASDL-3023-021
ASDL-3023-S21
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LEXAN 940
Abstract: photodiode 011
Text: ASDL-3023 IrDA Data Compliant Low Power 4Mbit/s with Remote Control Infrared Transceiver Data Sheet Description Features The ASDL-3023 is a new generation low profile high speed enhanced infrared IR transceiver module that provides the capability of (1) interface between logic
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ASDL-3023
ASDL-3023
IEC825
AV02-0054EN
LEXAN 940
photodiode 011
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AC97
Abstract: AN1114 ASDL-3023 ASDL-3023-008 ASDL-3023-021 ASDL-3023-S21 IEC825 ir transmitter led 880nm 47w marking lexan 21051
Text: ASDL-3023 IrDA Data Compliant Low Power 4Mbit/s with Remote Control Infrared Transceiver Data Sheet Description Features The ASDL-3023 is a new generation low profile high speed enhanced infrared IR transceiver module that provides the capability of (1) interface between logic
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ASDL-3023
ASDL-3023
AC97
AN1114
ASDL-3023-008
ASDL-3023-021
ASDL-3023-S21
IEC825
ir transmitter led 880nm
47w marking
lexan 21051
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AVR 8515 microcontroller
Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit
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22-bit
16-bit
1184B
03/00/xM
AVR 8515 microcontroller
FPGA AMI coding decoding
tri state
AOI222
AOI2223
AOI2223H
AOI222H
ATL35
0.35-um CMOS standard cell library inverter
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ir transmitter led 880nm
Abstract: Wet tantalum capacitor
Text: ASDL-3023 IrDA Data Compliant Low Power 4Mbit/s with Remote Control Infrared Transceiver Data Sheet Description Features The ASDL-3023 is a new generation low profile high speed enhanced infrared IR transceiver module that provides the capability of (1) interface between logic
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ASDL-3023
ASDL-3023
IEC825
AV02-0054EN
ir transmitter led 880nm
Wet tantalum capacitor
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max3843
Abstract: pc646
Text: PSD835G2V Flash PSD, 3V Supply, for 8-bit MCUs 4Mbit + 256 Kbit Dual Flash Memories and 64Kbit SRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ FLASH IN-SYSTEM PROGRAMMABLE ISP PERIPHERAL FOR 8-BIT MCUs DUAL BANK FLASH MEMORIES
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PSD835G2V
64Kbit
64Kbyte)
max3843
pc646
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Untitled
Abstract: No abstract text available
Text: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
16Mbit
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
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Untitled
Abstract: No abstract text available
Text: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
16Mbit
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
533MHz
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Untitled
Abstract: No abstract text available
Text: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
16Mbit
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
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C1157
Abstract: 74HCU04 MSM9800 MSM9805 EPROM 28 PINS "Piezo Speaker" Amplifier
Text: E2D0107-19-93 ¡ Semiconductor MSM9800 EVA BOARD ¡ Semiconductor This version:EVA Sep. 1999 MSM9800 BOARD Voice ROM Evaluation Board For MSM9802/9803/9805 GENERAL DESCRIPTION The MSM9800 EVA BOARD is an EPROM Evaluation board that enables the user to evaluate
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E2D0107-19-93
MSM9800
MSM9802/9803/9805
AR762/204)
MSM9802/MSM9803/MSM9805.
MSM980x
512-Kbit,
C1157
74HCU04
MSM9805
EPROM 28 PINS
"Piezo Speaker" Amplifier
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY234100 Series 512KX 8-bit/256K X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234100 is a 4Mbit mask-programmable ROM organized either as 524,288 x 8bit Byte mode or as 262,144 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS process
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HY234100
512KX
8-bit/256K
16-bit
16bit
120ns
600mil
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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STR S 6307
Abstract: str 6307 uP 6308 AD STR 6309 STR 6307 POWER uP 6308 AP str s 6309 LT 7224 of str 6309 str 6308
Text: 7224 CONTROLLER FOR 4MBIT BPK 5V74 BUBBLE MEMORY SUBSYSTEM • Provides Interface between Host Microprocessor and 4 Mbit Bubble Memory Subsystems ■ 18 Easy-to-Use Commands . Three Modes of Data Transfer _ ■ Interlaces to 8080/85/86/88/186/286 and Other Standard Microprocessors
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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Untitled
Abstract: No abstract text available
Text: •H Y U N D A I HY234100 Series 512KX 8-b¡t/256KX 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234100 is a 4Mbit mask-programmable ROM organized either as 524,288 x 8bit Byte mode or as 262,144 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS process
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HY234100
512KX
t/256KX
16-bit
16bit
120ns
600mil
525mil
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Untitled
Abstract: No abstract text available
Text: NMOS 4Mbit MASK ROM 524,288wordx8bit RP234096 The R P234096 is static NM OS Read O nly Memory • P IN C O N F IG U R A T IO N ( Top view ) organized as 5 2 4288 words X 8 bits and operates from a single + 5 V Supply. And the consumption current Al 7 [ 1
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RP234096
P234096
pin31
524288w
200ns
288wordx8bit)
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Untitled
Abstract: No abstract text available
Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n
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HY234000
120ns
525mil
HY234000P-XXX
HY234000G-XXX
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lh5s4axx
Abstract: sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin
Text: LH53F4600 4M Mask ROM SHARP LH53F4600 • Description Flash Memory Compatible pinout 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53F4600N User’s No. : LH-5S4ZXX is a CMOS 4Mbit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be
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LH53F4600
LH53F4600N
16-bit
lh5s4axx
sharp mask rom
LH53F4600
lh5s4
LH5S
flash memory 4m 44-pin
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RP234096
Abstract: No abstract text available
Text: It rui JL ^PRELIMINARY! / EK-0 4 3 -9 0 0 4 NMOS 4Mbit MASK ROM 524,288word x 8bit RP234096 The RP234096 is static NMOS Read Only Memory organized as 5 2 4 28 8 words a single + 5 V Supply. X I PIN C O N F IG U R A T IO N 8 bits and operates from And the consumption current
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288word
RP234096
RP234096
pin31
524288w
200ns
100pF
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Untitled
Abstract: No abstract text available
Text: RICOH CORP/ ELECTRONIC 54E D K D fBC D D G • TTHHbTG aQQ2G77 256 7 IS E K -0 7 3 -9 2 0 3 CMOS 4Mbit MASK ROM RP/RF534040E 524,288 word x 8 bit / 262,144 word * 1 6 bit RP/RF534040E is a 4 Mbit programmable mask ROM using CMOS process technology. It has also been provided with a power down function which reduces supply current from 50mA (Max.)
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aQQ2G77
RP/RF534040E
RP/RF534040E
200er
F534040E
40PIN
RP534040E)
64PIN
RF534040E)
114max)
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I28F400
Abstract: 80L188EB 82360SL intel PLD D773
Text: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low
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Da773Sa
28F400BX-TL/BL,
28F004BX-TL/BL
x8/x16
28F400BX-TL,
28F400BX-BL
16-bit
32-bit
28F004BX-TL,
28F004BX-BL
I28F400
80L188EB
82360SL
intel PLD
D773
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Untitled
Abstract: No abstract text available
Text: RICOH CORP/ EL ECTRONIC It SME D • 7 7 M 4 b ciG GGDSOTfl TflE m P C H EK-043-9004 NMOS 4Mbit MASK ROM RP234096 ^ 524,288w ordx8bit The R P234096 is static NM O S Read Only Mem ory ■ P IN C O N F IG U R A T IO N VMs-tr ( Top view ) organized as 5 2 4 2 8 8 words X 8 bits and operates from
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EK-043-9004
RP234096
P234096
pin31
524288w
200ns
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Untitled
Abstract: No abstract text available
Text: K D i i G O CMOS 4Mbit MASK ROM RP/RF534040E 5 2 4 , 2 8 8 w o rd x 8 bit / 2 6 2 , 1 4 4 w o rd * 1 6 b it R P /R F 5 3 4 0 4 0 E is a 4 M b it p ro g ra m m a b le m a s k R O M using C M O S p ro c e s s te c h n o lo g y . It h a s a ls o b e e n p ro v id e d w ith a p o w e r d o w n fu n c tio n w h ic h re d u c e s s u p p ly c u rre n t fro m 5 0 m A
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RP/RF534040E
098max)
114max)
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