O128DM
Abstract: No abstract text available
Text: 3D Memory 64/128MB DRAM M odules 3.3V or 5V 16/32M B x 32 D R A M S IM M with Optional Parity Product Features Ind u stry's First Organized 128 Mbyte IEDEC SIMMs 16/32 M b yte by 32, o r 36 bits fo r optional fo u r-b it p a rity S ta n d ard 1 2 -p in Single In -L in e
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64/128MB
16/32M
16Mbit
cycles/32m
O128DM
-F050-01
-F050-1
128DM-F033-21
128DM-F033-3
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4Mx4 dram simm
Abstract: 4MX36 4Mx4 2 CHIP dram simm 72 simm function 4Mx4 fpm dram 30 simm
Text: 4M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364006-S52m09JA 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 4Mx36 bit, 9 chip, 5V, 72 Pin SIMM module consisting of (8) 4Mx4 (SOJ) and (1) 4Mx4 (SOJ, Quad CAS) DRAM. The module is
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364006-S52m09JA
4Mx36
DS527-15f
4Mx4 dram simm
4Mx4 2 CHIP dram simm
72 simm function
4Mx4 fpm dram 30 simm
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plc siemens
Abstract: ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333
Text: Chip On Board Innovation in Memory Module Technology Initiative for you. Siemens Semiconductors. CHIP ON BOARD CHIP ON BOARD Innovation in memory module technology. Shorter response cycles, more flexibility and logistical challenges lead to new product concepts
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de/Semiconductors/products/35/352
B191-H7152-G1-X-7600
plc siemens
ding dong
siemens modules GR 70
4x4Mx16
componentes eletronicos 333
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4Mx4 dram simm
Abstract: FPM DRAM 30-pin SIMM CI 3060 elsys 72 simm function 8m x 36 8m x 36 60ns simm 4Mx4 fpm dram 30 simm
Text: 8M x 36 Bit 5V ECC FPM SIMM Fast Page Mode FPM DRAM SIMM 368056-S52m18JD 72 Pin 8Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12
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368056-S52m18JD
8Mx36
72-pin
DS592-20
4Mx4 dram simm
FPM DRAM 30-pin SIMM
CI 3060 elsys
72 simm function
8m x 36
8m x 36 60ns simm
4Mx4 fpm dram 30 simm
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4Mx4 dram simm
Abstract: 4MX36 simm 72 pin edo
Text: 4M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 364056ES52m09JB 72 Pin 4Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1
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364056ES52m09JB
4Mx36
72-pin
DS592-05e
4Mx4 dram simm
simm 72 pin edo
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4Mx4 dram simm
Abstract: No abstract text available
Text: 4M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364056-S52m09JB 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1 14
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364056-S52m09JB
4Mx36
72-pin
DS592-05f
4Mx4 dram simm
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364006-S52T12JD
Abstract: 72 simm function
Text: 4M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364006-S52T12JD 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V General Description Pin Assignment Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1 14 A2
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364006-S52T12JD
4Mx36
72-pin
72 simm function
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4Mx4 dram simm
Abstract: 8m x 36 60ns simm
Text: 8M x 36 Bit 5V ECC EDO SIMM Extended Data Out EDO ECC DRAM SIMM 368056ES52m18JD 72 Pin 8Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11
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368056ES52m18JD
8Mx36
72-pin
DS592-0
4Mx4 dram simm
8m x 36 60ns simm
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324006-S52T08JB
Abstract: 4mx32 4Mx32 dram simm 72 simm function
Text: 4M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 324006-S52T08JB 72 Pin 4Mx32 FPM SIMM Unbuffered, 2K Refresh, 5V Pin Assignment Pin # Symbol 1 VSS 2 DQ0 3 DQ16 4 DQ1 5 DQ17 6 DQ2 7 DQ18 8 DQ3 9 DQ19 10 VCC 11 NC 12 A0 13 A1 14 A2 15 A3 16 A4 17 A5 18
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324006-S52T08JB
4Mx32
DS311-39
4Mx32 dram simm
72 simm function
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4Mx8 dram simm
Abstract: No abstract text available
Text: SM57208407UB6AU Preliminary B Revision History • October 2, 1997 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected] Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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SM57208407UB6AU
32MByte
200-pin
4Mx8 dram simm
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4Mx4 dram simm
Abstract: 72 simm function 8m x 36
Text: 8M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 368006-S52G24JL 72 Pin 8Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V General Description Pin Assignment The module is a 8Mx36 bit, 24 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) and (8) 4Mx1 (SOJ) DRAMs. The module is unbuffered and
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368006-S52G24JL
8Mx36
DS156-0
4Mx4 dram simm
72 simm function
8m x 36
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8mx32 simm 72 pin
Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
Text: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.
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328006ES52T16JD
8Mx32
DS311-
8mx32 simm 72 pin
8Mx32 dram simm
4Mx4 dram simm
simm EDO 72pin
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Untitled
Abstract: No abstract text available
Text: SM57204407UB6AU Preliminary A Revision History • October 2, 1997 Preliminary datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected] Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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SM57204407UB6AU
32MByte
200-pin
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328006-S52T16JD
Abstract: 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM
Text: 8M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 328006-S52T16JD 72 Pin 8Mx32 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Fast Page Mode
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328006-S52T16JD
8Mx32
DS311-
8mx32 simm 72 pin
4Mx4 2 CHIP dram simm
FPM DRAM 30-pin SIMM
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hosiden DC motor 12V
Abstract: debug codes FD-04HG-2600 samsung lcd monitor circuit diagram lt121s1 lt121s1-153 teac fd samsung crt tv block diagram SAMSUNG LT121S1 Toshiba color tv lcd Circuit Diagram schematics HOSIDEN MOTOR
Text: Model 6200A Service Manual The circuit schematics herein provided for reference only are not necessarily the latest version. Mainboard D/D 3.3V CPU Power 2.2V2.45V/2.8V CPU Power Charger & Switch Board LCD Bar 1Mx16 8/16MB Memory 4Mx4 32MB Memory 4Mx4 40MB Memory
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1Mx16
8/16MB
77-62000-D07C
77-6200C-D03
77-620A5-D10
77-620A5-D50-A
77-6200S-D13
77-62006-D02
77-6202T-D71
77-2205T-060
hosiden DC motor 12V
debug codes
FD-04HG-2600
samsung lcd monitor circuit diagram lt121s1
lt121s1-153
teac fd
samsung crt tv block diagram
SAMSUNG LT121S1
Toshiba color tv lcd Circuit Diagram schematics
HOSIDEN MOTOR
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teac fd
Abstract: JU-226A SAMSUNG LT121S1 Trident Cyber9385 debug codes I82365 lt104s4-151 hosiden DC motor 12V 200X75 circuit diagram for samsung flat screen tv
Text: Model 6400A Service Manual Mainboard D/D 3.3V CPU Power 2.2V2.45V/2.8V CPU Power Charger & Switch Board LCD Bar 1Mx16 8/16MB Memory 4Mx4 32MB Memory 4Mx4 40MB Memory Data Board DSTN 12.1” Sanyo, Hitachi DSTN 12.1” Panasonic DSTN 12.1” Kyocera TFT 10.4” NEC
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1Mx16
8/16MB
71-62000-D07C
71-6200C-D03
71-620A5-D01
71-620A5-D50
71-6200S-D13
71-62006-D02
71-6202T-D71
71-2205T-060
teac fd
JU-226A
SAMSUNG LT121S1
Trident Cyber9385
debug codes
I82365
lt104s4-151
hosiden DC motor 12V
200X75
circuit diagram for samsung flat screen tv
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4Mx4 dram simm
Abstract: No abstract text available
Text: May 1998 Revision 2.0 data sheet PDC4RV7244- 75/102/103 T-S 32MByte (4M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC4RV7244-(75/102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M
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PDC4RV7244-
32MByte
PC/100
32-megabyte
168-pin,
MB81F16422B-
4Mx4 dram simm
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Untitled
Abstract: No abstract text available
Text: SM572044074D6BU May 26, 2000 Revision History • May 26, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • June 17, 1999 Changed datasheet part no. from SM57204407UD6UU to SM572044074D6BU.
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SM572044074D6BU
SM57204407UD6UU
SM572044074D6BU.
234030EREIN
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Untitled
Abstract: No abstract text available
Text: SM57204407UE6UU May 31, 2000 Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Datasheet released. Note* : A10/AP initiates Auto-precharge.
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SM57204407UE6UU
A10/AP
32MByte
72EREIN
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MCM91430
Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1
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stan00C
1Mx16
MCM4L4400B
MCM5L4100A
MCM54100A
256Kx16
512Kx8
MCM5L4100A
MCM54100A
MCM91430
Motorola CMOS Dynamic RAM 1M
Motorola CMOS Dynamic RAM 1M x 1
1mx1 DRAM DIP
MCM511000A
mcm511000
1K x4 static ram application note
Motorola CMOS Dynamic RAM 16m x 32
TSOP 400 86
MCM69F536B
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Untitled
Abstract: No abstract text available
Text: SM53204407UF6UU March 30, 2000 Revision History • March 30, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • August 5, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM53204407UF6UU
16MByte
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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Untitled
Abstract: No abstract text available
Text: SM56404407UX6UU May 31, 2000 Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM56404407UX6UU
32MByte
168EREIN
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Untitled
Abstract: No abstract text available
Text: SM56404407UN6BU May 23, 2000 Revision History • May 23, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • November 25, 1998 Changed datasheet part no. from SM56404407UN6UU to SM56404407UN6BU.
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SM56404407UN6BU
SM56404407UN6UU
SM56404407UN6BU.
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