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    4N0607

    Abstract: smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2
    Text: IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0607 IPI80N06S4-07 4N0607 smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2 PDF

    IPD90N04S6-07

    Abstract: 4N0607 IPD90N06S4-07 PG-TO252-3-11
    Text: IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 6.9 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N06S4-07 PG-TO252-3-11 IPD90N04S6-07 4N0607 45Anents IPD90N04S6-07 4N0607 IPD90N06S4-07 PG-TO252-3-11 PDF