motorola 4N35 opto coupler
Abstract: 4N37 4N35 circuits motorola 4N36 4N35 MOTOROLA motorola 4n35 4N35 4N36
Text: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA 4N35 * 4N36 4N37 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 100% Min] The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
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4N35/D
4N35/D*
motorola 4N35 opto coupler
4N37
4N35 circuits
motorola 4N36
4N35 MOTOROLA
motorola 4n35
4N35
4N36
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PLD-6
Abstract: No abstract text available
Text: 4N35 4N36 4N37 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions
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MOC 4N25
Abstract: MOC 4N35 MQC8204 M003041 MOC3061 MOC3081 H11AV1
Text: Section Four Optoisolators/ Optocouplers 4N25 S e rie s . 4N29 S e rie s . 4N35 S e rie s . 4 N 3 8 .
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CNY17-1
H11A1
H11AA1
H11AV1
H11B1
H11D1
H11G1
MOC3061
MOC3081
MOC5007
MOC 4N25
MOC 4N35
MQC8204
M003041
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Untitled
Abstract: No abstract text available
Text: O p toisolator S pecification s 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he 4N 35,4N 36,4N 37 are gallium arsenide infrared em itting diodes coupled with a silicon phototransistor in a dual in-line package.
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TLP181
Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
Text: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%
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CNY17-2
CNY17-3
3750VRMS
2500VRMS
TLP504A
TLP504A-2
TLP521-1A
TLP521-1
TLP521-2A
TLP521-2
TLP181
opto TLP181
tlp521 SMD
6 pin TRANSISTOR SMD CODE 1A
TLP521-1A
tlp181 opto
TLP181-GB
TLP521
3750VRMS
TLP521-2A
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4N35 circuits
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO a VDE UL CSA SETI ® ® SEMKO DEMKO ® BS NEM KO BABT 6-Pin DIP Optoisolators Transistor Output 4N 35* 4N36 4N37 CTR a 100% Min 'Motorola Preferred Device STYLE 1 PLASTIC The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared em itting diode
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide
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430E271
T-m-33
4N35-4N36-4N37
E51868
S-42662
92CS-429S1
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ci al s 6pin
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N35 4N36 4N37 6-Pin DIP Optoisolators Transistor Output These d evices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
ci al s 6pin
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EL 4N35
Abstract: 4n25 schematic 4N25 APPLICATION NOTE CT275 4n20
Text: SIEMENS PHOTOTRANSISTOR INDUSTRY STANDARD SINGLE CH ANN EL 6 PIN DIP O PTO CO UPLER D E V IC E T Y P E S CTR, % Min. H11A2 H11A3 20 20 10 10 100 100 100 10 50 20 20 H11A4 H11A5 10 30 4N27 4N28 4N35 4N36 4N37 4N38 H11A1 Part No. M CT2 M CT2E M CT270 MCT271
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H11A1
H11A2
H11A3
H11A4
H11A5
CT270
MCT271
CT272
CT273
CT274
EL 4N35
4n25 schematic
4N25 APPLICATION NOTE
CT275
4n20
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Motorola 4N35
Abstract: 4n36 motorola
Text: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared
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4N35/D
Motorola 4N35
4n36 motorola
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4N35-4N37
Abstract: No abstract text available
Text: Optoisolator Specifications 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e 4 N 3 5 ,4 N 3 6 ,4 N 3 7 a r e g a lliu m a r s e n id e in f r a r e d e m ittin g d io d e s c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a l in -lin e p a ck a g e .
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4n25
Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
Text: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium
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F14481
2500Vdc
4n25
4n35
597-289
4n25 an
DIODE 0536
W4N35
4n32
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4N27W
Abstract: 4N28 4N31 4N35 4N36 4N37 ic 4n35 4n33 and 4n35
Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4N27W
4N28
4N31
4N35
4N36
4N37
ic 4n35
4n33 and 4n35
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
E0110b
30A-02
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transistor 45 f 122
Abstract: 4n33 and 4n35 4N35 C 547 transistor TRANSISTOR 547 transistor 551 547 TRANSISTOR 4N27W 4N28 4N31
Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4N27W
transistor 45 f 122
4n33 and 4n35
4N35
C 547 transistor
TRANSISTOR 547
transistor 551
547 TRANSISTOR
4N28
4N31
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Diode 10Z
Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R
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CNY17
CNY47
CNY47A
CNY51
H11A2
H11A3
B11A4
Diode 10Z
4H26
Diode 20Z
CNY47A
4N2b
h11ag3
OPTEK 4N36
CNY51
B11D3
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4N2b
Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R
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CNY17
CNY47
CNY47A
CNY51
H11A2
H11A3
B11A4
4N2b
h11ag3
CNY47A
CNY51
B11D3
MCT2 surface mount
CNY47
H11A2
H11A3
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GE 4N35
Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832LSE
30A-02
GE 4N35
4n35 optoisolator
motorola 4n35
4N36
Control 4N35
4N35
VDE0160
VDE0832
VDE0833
C4N35
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4N35-4N36-4N37
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 N 35 4N36 4N 37 6 -P in D IP O p to is o la to rs Transistor Output Th e se d e v ic e s c o n s is t o f a g a lliu m a rse n id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r d e te cto r.
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E54915
4N35-4N36-4N37
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4n35 optoisolator
Abstract: 4953 transformer lm2576 CCI-4932 dc dc converter 4953 LM257X Q1 4939 CCI-4967 RL5026 Pulse Transformer 5024
Text: Application Note 13 Micrel Application Note 13 52kHz LM2574/5/6 Family Design Guide by Kevin Lynn Introduction Micrel’s LM257x family of BiCMOS simple buck voltage regulators feature faster rise/fall time, faster response to fault conditions, and improved efficiency at light loads.
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52kHz
LM2574/5/6
LM257x
52kHz
4n35 optoisolator
4953
transformer lm2576
CCI-4932
dc dc converter 4953
Q1 4939
CCI-4967
RL5026
Pulse Transformer 5024
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s10 k320
Abstract: 4k7 trimpot varistor s20 k320 s20 k320 smd u2.8 VARISTOR k320 spec transistor smd za VARISTOR K320 S20 led 3mm red BJ10A
Text: PM4100APD Application Note: Energy Meter Evaluation Module sames PM4100APD FEATURES + Compatible with SA4102A / SA2002E / SA2002H / + SA2002P / SA2002D / SA2102D. All devices are PDIP20, Connection of external sensing elements, mains and Operation from either single +5V supply or dual rail supply
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PM4100APD
PM4100APD
SA4102A
SA2002E
SA2002H
SA2002P
SA2002D
SA2102D.
PDIP20,
s10 k320
4k7 trimpot
varistor s20 k320
s20 k320
smd u2.8
VARISTOR k320 spec
transistor smd za
VARISTOR K320 S20
led 3mm red
BJ10A
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4n27 opto isolator
Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4N27W
4n27 opto isolator
4N2S
4n26 opto isolator
opto 4n25
4N25
transistor C 547 c
340 opto isolator
ic 4n26
opto isolator 4n26
4N26
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4n33 and 4n35
Abstract: 4N27W 4N28 4N29 4N30 4N31 4N32 4N33 4N35 4N36
Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4N27W
4n33 and 4n35
4N28
4N29
4N30
4N31
4N32
4N33
4N35
4N36
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ILQ74 opto isolator
Abstract: 78C05 5v regulator SCHEMATIC DIAGRAM REVERSE KWH METER 78c05 opto isolator ILQ74 78LC05-voltage REGULATOR IC 78C05 78c05 voltage regulator db25 pcb mount datasheet REGULATOR IC 78C05
Text: Application Note: Energy Meter Evaluation Module sames PM9607AP INTRODUCTION meter configurations possible with the SA9607M using the PM9607AP module. Note that the values of the current transformer’s resistor values need to change to make some of the rated conditions possible. This will be covered in the
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PM9607AP
SA9607M
PM9607AP
SA9607P
SA9607
ILQ74 opto isolator
78C05 5v regulator
SCHEMATIC DIAGRAM REVERSE KWH METER
78c05
opto isolator ILQ74
78LC05-voltage
REGULATOR IC 78C05
78c05 voltage regulator
db25 pcb mount
datasheet REGULATOR IC 78C05
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