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    IPB80P04P4-07

    Abstract: PG-TO262-3-1 S 6085 J 4P0407
    Text: IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.4 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-07 S 6085 J 4P0407 PDF

    4P0407

    Abstract: IPD85P04P407
    Text: IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.3 mW ID -85 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD85P04P4-07 PG-TO252-3-313 4P0407 -10V2) 4P0407 IPD85P04P407 PDF