smd transistor 6m
Abstract: No abstract text available
Text: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum
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AQS610TS
Abstract: AQS610TSX AQS610TSZ
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
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AQS610TS)
16-pin
083inch
AQS610TS
AQS610TSX
AQS610TSZ
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)
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AQS610TS)
16-pin
083inch
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CX20551
Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
Text: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#
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318MHz
MAX1845
56pins
16x16
MAX1544
OSC14M
MAX1999
LED12
LED11
31CT6MB0016
CX20551
MTP81
R5538
BAV88
isl6260
HP PAVILION G6 Quanta R52
HP Pavilion g6
CF 309
ICS954206AGT
quanta
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Untitled
Abstract: No abstract text available
Text: SI6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V d s (V) -8 I Rd s io m ) (£2) I 0.012 @ VGS = -4 .5 V ±8.8 I 0.017 @ VGS = -2 .5 V ±7.4 I 0.025 @ VGs - -1.8 V ± 6 .0 I d (A) so TSSOP-8 O D [T it 'Source Pins 2, 3, 6 and 7 must be tied common
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SI6465DQ
Si6465DQ
S-56943--
02-Nov
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CX20468-31
Abstract: CX20468 MC9701 RS480M hp pavilion r62 hp pavilion g6 u2343 KBC-NS87551L IR7832 MFB902
Text: 1 2 3 4 5 6 PCB STACK UP LAYER 2 : GND A DDR-SODIMM1 CLAW HAMMER / RS480 / SB400 CPU THERMAL SENSOR DDR 266,333,400MHz GMT-781 CPU CLAW HAMMER LAYER 4 : IN2 LAYER 5 : VCC 8 CT8 BLOCK DIAGRAM LAYER 1 : TOP LAYER 3 : IN1 7 14.318MHz 754 Pins uPGA DDR-SODIMM2
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400MHz
GMT-781
RS480
SB400
318MHz
MAX1845
CY28RS480/
ICS951412
16x16
MAX1544
CX20468-31
CX20468
MC9701
RS480M
hp pavilion r62
hp pavilion g6
u2343
KBC-NS87551L
IR7832
MFB902
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Untitled
Abstract: No abstract text available
Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 398 MOSFET Relays – G3VM-41LR3 Text J Text MOSFET Relays – G3VM-41LR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a
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G3VM-41LR3
G3VM-41LR4
J963-E2-01
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G3VM-41LR3
Abstract: "Common Precautions" for all G3VM models all mosfet list
Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 396 MOSFET Relays – G3VM-21LR10 Text J Text MOSFET Relays – G3VM-41LR3 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a
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G3VM-21LR10
G3VM-41LR3
G3VM-41LR4
J962-E2-01
G3VM-41LR3
"Common Precautions" for all G3VM models
all mosfet list
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AQS610TS
Abstract: AQS610TSX AQS610TSZ
Text: AQS610TS TESTING GU General Use Type SOP Series Multi-function (1a1b MOSFET & optocoupler) 16 Pin Type 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins)
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AQS610TS
16-Pin
083inch
AQS610TS
AQS610TSX
AQS610TSZ
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fds mosfet
Abstract: No abstract text available
Text: Tem ic SÌ6435DQ S em i co n d u c t or s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) r DS(on) ( ^ ) I d (A ) 30 0.040 @ V o s = -1 0 V 0.070 @ V o s = -4 .5 V ± 4 .5 ± 3 .4 s*o TSSOP-8 °n Top View *Source Pins 2, 3, 6 and 7 must be tied common.
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6435DQ
S-49534--Rev.
-Oct-97
06-Oct-97
fds mosfet
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G3VM-21GR1
Abstract: G3VM-41GR4 41GR4
Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 362 MOSFET Relays – G3VM-41GR3 Text J Text MOSFET Relays – G3VM-41GR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a group on
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G3VM-41GR3
G3VM-41GR4
G3VM-21GR1
J957-E2-01
G3VM-21GR1
G3VM-41GR4
41GR4
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L6918
Abstract: L6918A
Text: L6918 L6918A 5 BIT PROGRAMMABLE MASTER/SLAVE MULTIPHASE CONTROLLER COMING SOON DESCRIPTION voltage between 1.1V and 1.85V in 25mV steps as required by VRM 9.0 processors specification. Master and slave devices share the same reference programmed by the VID pins.
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L6918
L6918A
SO-28
L6918
L6918A
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Siliconix
Abstract: S-54704 It83
Text: SÌ6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET Vos (VJ Ros(on) i Q) ip (A) 0.014 @ Vqs = 4.5 V ±7.8 0.021 @ Vqs = 2-5 V ±6.3 e < f> " A 20 D O TSSOP-8 • UE * Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô S' N-Channel MOSFET wtmmmm
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6466DQ
PAR704--
13-Oct-97
Si6466DQ
S-54704--
Siliconix
S-54704
It83
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Untitled
Abstract: No abstract text available
Text: AN11374 Pin FMEA for NX3P switches Rev. 1 — 5 August 2013 Application note Document information Info Content Keywords FMEA Abstract This application note provides a Failure Modes and Effects Analysis FMEA for the device pins of NXP Semiconductors logic controlled high
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AN11374
AN11052
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF360
MIL-S-19500
di/dt-100A/
300cS.
03b0fc
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Untitled
Abstract: No abstract text available
Text: Tem ic siiiconix_SÌ6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VD S V rDS(on) ( ß ) I d (A) 0.045 @ V q s = 10 V ± 4 .4 0.070 @ V GS = 4.5 V ± 3 .5 30 D O TSSOP-8 'S o u rc e Pins 2, 3, 6 a n d 7 m ust be tied com m on.
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6436DQ
S-42910--
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Si6433DQ
Abstract: No abstract text available
Text: Siliconix PĆChannel EnhancementĆMode MOSFET Si6433DQ Product Summary VDS V -12 rDS(on) (W) ID (A) 0.06 @ VGS = -4.5 V "4.0 0.10 @ VGS = -2.7 V "3.0 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6433DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.
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Si6433DQ
S42031Rev.
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Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G Si6447DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6447DQ
18-Jul-08
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Si6459DQ
Abstract: No abstract text available
Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6459DQ
18-Jul-08
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Si6459DQ
Abstract: No abstract text available
Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6459DQ
08-Apr-05
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Si6415DQ
Abstract: No abstract text available
Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6415DQ
08-Apr-05
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Si6447DQ
Abstract: No abstract text available
Text: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si6447DQ
S-47958--Rev.
15-Apr-96
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Si6435DQ siliconix
Abstract: No abstract text available
Text: Temic siiiconix_SÌ6435DQ P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) ( ß ) 30 I d (A) 0.040 @ Vc,s = - 1 0 V ±4.5 0.070 @ VGS = -4 .5 V ±3.4 T S S O P -8 D [T s d j ] • SÍ643SDQ S [T G d D *Source Pins 2, 3, 6 a n d 7
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6435DQ
643SDQ
S-41471--
Si6435DQ siliconix
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S-49534
Abstract: Si6433DQ
Text: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6433DQ
S-49534--Rev.
06-Oct-97
S-49534
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