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    5.9 GHZ POWER AMPLIFIER Search Results

    5.9 GHZ POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    5.9 GHZ POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    802.11a Amplifier

    Abstract: MMIC marking 77 HMC415LP3
    Text: HMC415LP3 / 415LP3E v03.0605 LINEAR & POWER AMPLIFIERS - SMT 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm


    Original     		PDF HMC415LP3 415LP3E HMC415LP3 HMC415LP3E 802.11a Amplifier MMIC marking 77

    RFS1003

    Abstract: 5850MHZ
    Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the


    Original     		PDF RFS1003 RFS1003 WLAN/802 11a/HIPERLAN/2 DRFS-1003-0DSH 5850MHZ

    12w 94

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V5964 MGFC41V5964 -45dBc 30dBm 12w 94

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V5964A MGFC39V5964A -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V5964 MGFC41V5964

    5.9 GHz power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V5964 MGFC42V5964 -45dBc 32dBm 5.9 GHz power amplifier

    MGA-25203

    Abstract: MGA-25203-BLKG 58GH
    Text: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized


    Original     		PDF MGA-25203 MGA-25203 11a/n AV02-1961EN MGA-25203-BLKG 58GH

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V5964 MGFC42V5964

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V5964A MGFC36V5964A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5964 5.9 – 6.4 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5964 MGFC40V5964 -49dBc 29dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC38V5964 MGFC38V5964 -45dBc 27dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V5964A MGFC36V5964A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet The SST11CP15 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-linearity, high-efficiency applications with superb power-added efficiency while operating over the 4.9-5.9 GHz


    Original     		PDF SST11CP15 SST11CP15 23dBm. 12-contact 11a/n) DS70005016C

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC38V5964 MGFC38V5964 -45dBc 27dBm

    MGFC39V5964A

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V5964A MGFC39V5964A -45dBc 28dBm

    AM42-0040

    Abstract: CR-15
    Text: GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 AM42-0040 GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ.


    Original     		PDF AM42-0040 CR-15 AM42-0040 CR-15

    Untitled

    Abstract: No abstract text available
    Text: HMC415LP3 / 415LP3E v03.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN


    Original     		PDF HMC415LP3 415LP3E HMC415LP3 HMC415LP3E

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V5964 MGFC44V5964 -42dBc

    GF38

    Abstract: MGFC4
    Text: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V5964A MGFC42V5964A -45dBc GF38 MGFC4

    HMC415

    Abstract: No abstract text available
    Text: HMC415LP3 v01.0702 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB • 802.11a WLAN 3.7% EVM @ Pout = +15 dBm


    Original     		PDF HMC415LP3 HMC415LP3 HMC415

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V5964A MGFC42V5964A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: HMC415LP3 / 415LP3E v03.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN


    Original     		PDF HMC415LP3 415LP3E HMC415LP3 HMC415LP3E

    Untitled

    Abstract: No abstract text available
    Text: HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN 11 • HiperLAN WLAN


    Original     		PDF HMC415LP3 415LP3E HMC415LP3 HMC415LP3E

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC45V5964A MGFC45V5964A -45dBc