a061
Abstract: No abstract text available
Text: P/N 500-100-100-35-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 100 - 500 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 100 - 500 MHz
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500-100-100-35-E3
500-100-100-35-E3
a061
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A057
Abstract: No abstract text available
Text: P/N 500-30-40-30-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 30 - 500 MHz 40 Watts Gain: 30 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 40 Watts cw minimum Frequency Range 30 - 500 MHz
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500-30-40-30-E3
500-30-40-30-E3
A057
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push pull class AB RF linear
Abstract: 500-30-100-35-E3 class B push pull power amplifier
Text: Model A072 P/N 500-30-100-35-E3 RF POWER AMPLIFIER MODULE 30 - 500 MHz 100 Watts Small Size High Efficiency Low Even Order Harmonics Rugged Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS RF Output Power Frequency Range Gain Main DC Supply
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500-30-100-35-E3
push pull class AB RF linear
500-30-100-35-E3
class B push pull power amplifier
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Untitled
Abstract: No abstract text available
Text: MPP5002K5200-2 DATA SHEET 2 Way High Power Broadband Combiner SMA Connectors From 500 MHz to 2.5 GHz Rated at 200 Watts MPP5002K5200-2 is a 2 way High Power Broadband RF Combiner with a max input power at 200 watts operating from 500 to 2500 MHz with, 50 ohm SMA
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MPP5002K5200-2
MPP5002K5200-2
5-ghz-200-watts-mpp5002k52002-p
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Untitled
Abstract: No abstract text available
Text: MPP0801K0500-4 DATA SHEET 4 Way High Power Broadband Combiner N Connectors From 80 MHz to 1,000 MHz Rated at 500 Watts MPP0801K0500-4 is a 4 way High Power Broadband RF Combiner with a max input power at 500 watts operating from 80 to 1000 MHz with 50 ohm N connectors.
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MPP0801K0500-4
MPP0801K0500-4
dband-1000-mhz-500-watts-mpp0801k0500-4-p
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731 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts
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MRF158
MRF158
731 motorola
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11-PIN relay tube socket
Abstract: beam Tube circuit diagram of door interlock system erie ceramic TP-105 Erie 124311
Text: 8121 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic-Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 170 Watts PEP Output at 30 MHz 235 Watts CW Output at 470 MHz The BURLE 8121 is a small, forced-air-cooled beam power tube suitable for use as an RF power amplifier, distributed amplifier,
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Untitled
Abstract: No abstract text available
Text: 4 Way High Power Broadband Combiner From 80 MHz to 1,000 MHz Rated at 500 Watts, Type N TECHNICAL DATA SHEET PE20S0006 PE20S0006 is a passive 4 way High Power Broadband RF Combiner with 50 ohm N connectors operating from 80 to 1000 MHz, with a max input power at 500 watts. The PE20S0006 has greater than 12 dB typical isolation, less than 0.75 dB typical
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PE20S0006
PE20S0006
ombiner-80-1000-mhz-500-watts-pe20s0006-p
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Untitled
Abstract: No abstract text available
Text: 2 Way High Power Broadband Combiner From 500 MHz to 2.5 GHz Rated at 200 Watts, SMA TECHNICAL DATA SHEET PE20S0007 PE20S0007 is a passive 2 way High Power Broadband RF Combiner with 50 ohm connectors operating from 500 to 2500 MHz, with a max input power at 200 watts. The PE20S0007 has greater than 13 dB typical isolation, less than 0.40 dB typical
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PE20S0007
PE20S0007
ay-sma-broadband-power-combiner-500-mhz-2
5-ghz-200-watts-pe20s0007-p
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Untitled
Abstract: No abstract text available
Text: 2 Way High Power Broadband Combiner From 20 MHz to 1,000 MHz Rated at 500 Watts, Type N TECHNICAL DATA SHEET PE20S0004 PE20S0004 is a passive 2 way High Power Broadband RF Combiner with 50 ohm N connectors operating from 20 to 1000 MHz, with a max input power at 500 watts. The PE20S0004 has greater than 10 dB typical isolation, less than 0.80 dB typical
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PE20S0004
PE20S0004
ombiner-20-1000-mhz-500-watts-pe20s0004-p
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HW-02N
Abstract: BNC T connectors INSERTION LOSS Microlab/FXR HW-02N HW-15N QQ-S-365 HW-04N bnc T connector loss Microlab FXR
Text: MICROLAB/FXR Bias/Monitor Tees HU and HW series ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power, Low Loss 100 – 8,000 MHz 50 Watts Average Power Rating See HW series data for 500 Watts Minimal RF Insertion Loss High Reliability Powering of Antenna Amplifiers N, BNC, TNC, or SMA Standard
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HW-08N
HW-15N
HW-30N
HW-60N
HW-02N
BNC T connectors INSERTION LOSS
Microlab/FXR HW-02N
HW-15N
QQ-S-365
HW-04N
bnc T connector loss
Microlab FXR
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Untitled
Abstract: No abstract text available
Text: P/N 5 0 0 - 3 0 - 1 0 0 - 3 5 - E3 LCF RF POW ER AM PURER MODULE AMPLIFIERS Small Size High Efficiency Low Even Order Harmonics Rugged 30 - 500 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum
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100-35-E3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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MRF327
MRF327
Li3b7555
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MRF327
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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80-mil-Thick
MRF327
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56-590-65
Abstract: MRF325 jmc 5201 565-9065
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325
56-590-65
jmc 5201
565-9065
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts
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MRF326
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QM2D
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages
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MRF393
QM2D
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MRF327
Abstract: Johanson Piston Trimmer
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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MRF327
80-mil-Thick
MRF327
Johanson Piston Trimmer
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PDF
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acrian RF POWER TRANSISTOR
Abstract: Acrian s 46120 BVces Scans-00115701
Text: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed
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0Dpi53i
100mA
acrian RF POWER TRANSISTOR
Acrian
s 46120
BVces
Scans-00115701
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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MRF327
MRF327
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2482 npn
Abstract: 2482 TRANSISTOR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed prim arily for w ideband large-signal output am plifier stages in the 100 to 500 MHz frequency range. • G uaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts
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MRF326
MRF326
2482 npn
2482 TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 M Hz Performance Output Power = 2.0 Watts
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RF158R)
IS12I
MRF158
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PDF
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ferroxcube toroids
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push
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MRF175GV
MRF175GU
MRF175G
MRF176
MRF175GV
MRF175GU
ferroxcube toroids
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PDF
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acrian RF POWER TRANSISTOR
Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
Text: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed
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