Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F
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BT169B
OT168.
BRY39
50/uA
BRY56
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BT145-500R
Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
Text: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92
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2N5064
200iiA
BT169B
200/iA
BT148-400R
-500R
-600R
OT-82
200juA
C122F
BT145-500R
PHILIPS BT152-400R
BTW38-600R
400v 50A Transistor
SOT-186
600RU
BTW38-600RU
600v
BTW38
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BT151-500R
Abstract: fjs 500 BT136-500E BT136 500 BT136-500
Text: Power Devices General Purpose Thyristors in order of current rating (cont.) Package Outline Type No. RMS On-State Current Average On-State Current h iR M S t max- lT(AV)"'ax.(1) Repetitive Peak Reverse Voltage Non-Repetitive Peak On-State Current VRRMmax.
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BT151F-500
BT151-500R
-650R
-800R
BT152-400R
-600R
-800R
O-220AB
00V/jjlS
fjs 500
BT136-500E
BT136 500
BT136-500
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DO-2144AA
Abstract: No abstract text available
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Thyristors - SMTBJ Specifications FEATURES • · · · Bi-directional transient voltage protection. Nano second clamping response. Surge capability up to 250 amps.
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DO-2144AA
300mm
330mm
DO-214AA
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NTE5685
Abstract: NTE5683 NTE5687 100A TRIAC NTE5680 NTE5681 NTE5682 NTE5684 NTE5686
Text: NTE5680 thru NTE5687 TRIAC, 25 Amp Description: The NTE5680 thru NTE5687 series of medium power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate triggering. Theses devices are designed for control of AC loads in applications such as
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NTE5680
NTE5687
NTE5687
NTE5680
NTE5681
300mA,
NTE5685
NTE5683
100A TRIAC
NTE5681
NTE5682
NTE5684
NTE5686
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NTE5673
Abstract: NTE5677 NTE5675 100A TRIAC triac 100a NTE5676 triac 600V 100A
Text: NTE5673 thru NTE5677 TRIAC – 15 Amp Description: The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity od applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such
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NTE5673
NTE5677
NTE5677
NTE5673
NTE5675
300mA,
NTE5675
100A TRIAC
triac 100a
NTE5676
triac 600V 100A
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CR diode transient
Abstract: 064c
Text: SiBOD Thyristors Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode TVS and
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DO-214AA
10x160
10x560
CR diode transient
064c
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DO-2144AA
Abstract: 500V 100A thyristors
Text: Thyristors SiBOD Breakover Devices SMTBJ Series “Crow Bar” Protection MECHANICAL CHARACTERISTICS To protect sensitive telecommunications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD • Terminals: modified ‘J’ bend for large
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180mm
300mm
DO-2144AA
500V 100A thyristors
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NTE5621
Abstract: NTE5622 NTE5623 NTE5627
Text: NTE5621 thru NTE5627 TRIAC – 10 Amp Description: The NTE5621 through NTE5627 TRIACs are designed primarily for full–wave AC control applications, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full– wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a
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NTE5621
NTE5627
NTE5627
100mA)
12Vdc,
NTE5622
NTE5623
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ferraz protistor
Abstract: PROTISTOR FERRAZ PROTISTOR FERRAZ 1000V ferraz protistor fuse 600 CP ferraz protistor fuse ferraz protistor 600v protistor fuse IEC 60269-4 ferraz ferraz shawmut fuse 14x51 DIN43620
Text: Semiconductor Fuses Your guide to high speed fuse protection Semiconductor fuses that meet every major standard. Standards may change from country to country, but the need for safe, reliable circuit protection for semiconductor applications is the same the world over. That’s why Ferraz
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BR-SEMICOND-001
ferraz protistor
PROTISTOR FERRAZ
PROTISTOR FERRAZ 1000V
ferraz protistor fuse 600 CP
ferraz protistor fuse
ferraz protistor 600v
protistor fuse
IEC 60269-4 ferraz
ferraz shawmut fuse 14x51
DIN43620
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AOR 3000
Abstract: D0214 pax thyristor marking aor 1cv5 22J 1KV Thyristor 100A,100V thyristor 150A
Text: T h y r i s t o r s SiBOD B r e a k o v e r D e v i c e s C 3 Y D O M I Control overpower T "Crow B sr” Prolsctlan MECHANICAL CHARACTB1ST1CS 76 protect sensitive teieconYnunications • Transfer molded, void free epoxy body circuitry, Qydcsm Thyristors (SiBCST
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galvanized iron thermal conductivity
Abstract: 122.04.02 dps 350 power supply schematic reliance thyristor 400V motor operated valves wiring diagrams reliance thyristor wiring diagram 135.12.02 automax dps 450 power supply schematic 1620a 17
Text: AutoMax DPS DC Power Module Instruction Manual User Manual: 49 1335-e 06 Publication: AMXDPS-UM003D-EN TABLE OF CONTENTS GENERAL NOTES Chapter 1. Chapter 2. DESCRIPTION WITH SCHEMATIC DIAGRAM 1.5 Features .
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1335-e
AMXDPS-UM003D-EN
F-800S
F-700L
F-800L
F-16S
F-16XL
F-14S
F-14M
F-14L
galvanized iron thermal conductivity
122.04.02
dps 350 power supply schematic
reliance thyristor
400V motor operated valves wiring diagrams
reliance thyristor wiring diagram
135.12.02
automax
dps 450 power supply schematic
1620a 17
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Untitled
Abstract: No abstract text available
Text: Thyristors S i B O D “ B r e a k o v e r D e v i c e s ? S MTB J Control overpower T "Cro w B a r" Protection MECHANICAL CHARACTERISTICS To protect sensitive telecom m unications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD "
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180mm
300mm
998-5D00
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ST103S
Abstract: rc 3150 20UNF
Text: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
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I25183
ST103S
ST103S
O-209AC
10ohms;
10ohms
rc 3150
20UNF
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Untitled
Abstract: No abstract text available
Text: OMNIREL CORP 43E ] m b7fltiQ73 QQDQTQfl Q . JS 8 S S E M CUSTOM PRODUCTS Circuit design, process design and quality engineers at Omnirel combine their talents along with our customer’s technical team to design application specific Power Hybrid Circuits . . , typified as follows:
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b7fltiQ73
QQ0CH12
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SCR 15A 500V PWM DC motor
Abstract: IC Triac/SCR Zero Voltage Switch l 120 "MOS Controlled Thyristors" HALF BRIDGE NPN DARLINGTON POWER MODULE MOS-Controlled Thyristor Omnirel 10a 400v power amplifier bipolar transistor 2KW bldc half bridge converter 2kw MOS Controlled Thyristor
Text: OMNIREL CORP 43E j m b70^073 OQQCHDÔ 0 . JS 8 S S E M CUSTOM PRODUCTS Circuit design, process design and quality engineers at Omnirel combine their talents along with our customer’s technical team to design application specific Power Hybrid Circuits . . , typified as follows:
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ST083S
Abstract: CS 15 thyristor EK 1E1
Text: Bulletin I25185 rev. B 03/94 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
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I25185
ST083S
ST083S
O-209AC
10ohms;
10ohms
CS 15 thyristor
EK 1E1
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AL 2450 dv
Abstract: ST083S thyristor cp 04 95
Text: Previous Datasheet Index Next Data Sheet Bulletin I25185/B ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance
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I25185/B
ST083S
ST083S
10ohm
T083S
AL 2450 dv
thyristor cp 04 95
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Untitled
Abstract: No abstract text available
Text: Bulletin I25238 10/06 ST333CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 720A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt
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I25238
ST333CPbF
O-200AB
ST333C.
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RC snubber thyristor design
Abstract: 200AB ST333C
Text: Bulletin I25170 rev. A 05/94 ST333C.C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK All diffused design Center amplifying gate 720A Guaranteed high dV/dt Guaranteed high dI/dt
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I25170
ST333C.
O-200AB
10sewidth
10ohms;
10ohms
RC snubber thyristor design
200AB
ST333C
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Untitled
Abstract: No abstract text available
Text: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
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I25183
ST103S
ST103S
08-Mar-07
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"MOS Controlled Thyristors"
Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE
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MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
MO-093AA
O-218)
"MOS Controlled Thyristors"
MCT thyristor
MOS Controlled Thyristor
M65P100F1
MCTV65P100F1
MOS-Controlled Thyristor
1000V MCT
MCTA65P100F1
2000A MOS
MCTV65P1
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M65P100F1
Abstract: RHRG75120 equivalent MCT thyristor 1000v
Text: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC
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65P10
MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
M65P100F1
RHRG75120 equivalent
MCT thyristor 1000v
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"mos controlled thyristor"
Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability
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MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
MO-093AA
O-218)
"mos controlled thyristor"
MOS Controlled Thyristor
MCTA65P100F1
1000V MCT
M65P100F1
MCTV65P100F1
MCT thyristor
MCT thyristor 1000v
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