Untitled
Abstract: No abstract text available
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
FSL430R4
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2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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Original
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FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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Original
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FSL430D,
FSL430R
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PDF
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43721
Abstract: No abstract text available
Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL430R4
JANSR2N7398
MIL-STD-750,
MIL-S-19500,
500ms;
43721
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PDF
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2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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Original
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FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50S1 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL430D,
FSL430R
36MeV/mg/cm2
O-205AF
254mm)
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PDF
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2E12
Abstract: 3E12 FRL430D FRL430H FRL430R
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
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PDF
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2E12
Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
Rad Hard in Fairchild for MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL430D,
FSL430R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-025MA
IRSM836-025MA
12x12mm
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PDF
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Untitled
Abstract: No abstract text available
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-025MA
IRSM836-025MA
12x12mm
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PDF
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IRMCK171
Abstract: IRMCS1171
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-025MA
IRSM836-025MA
12x12mm
IRMCK171
IRMCS1171
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PDF
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|
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international rectifier HVIC
Abstract: No abstract text available
Text: IRSM836-025MA 2A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-025MA is a 2A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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Original
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IRSM836-025MA
IRSM836-025MA
12x12mm
protec12
international rectifier HVIC
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PDF
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Untitled
Abstract: No abstract text available
Text: RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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RDD022N50
SC-63)
OT-428)
022N50
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 5.4W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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RDD023N50
SC-63)
OT-428)
023N50
R1102A
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PDF
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2E12
Abstract: 3E12 FSL430R4 JANSR2N7398
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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JANSR2N7398
FSL430R4
2E12
3E12
FSL430R4
JANSR2N7398
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PDF
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Untitled
Abstract: No abstract text available
Text: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
FRU30UI5
FRL430PHDT0
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PDF
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JANSR2N7398
Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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JANSR2N7398
FSL430R4
JANSR2N7398
2E12
3E12
FSL430R4
Rad Hard in Fairchild for MOSFET
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PDF
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FDD5N50NZTM
Abstract: FDD5N50NZ
Text: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS on = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Original
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FDD5N50NZ
FDD5N50NZTM
FDD5N50NZ
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PDF
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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Original
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2SK2178
F2E50VX2)
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PDF
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2SK2178
Abstract: F2E50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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Original
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2SK2178
F2E50VX2)
2SK2178
F2E50VX2
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PDF
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FDD5N50TM
Abstract: FDD5N50 FDD5N50TF ULTRA FAST diode 400v 5a
Text: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Original
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FDD5N50
FDD5N50
FDD5N50TM
FDD5N50TF
ULTRA FAST diode 400v 5a
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PDF
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