55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
|
Original
|
55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
|
PDF
|
ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
|
Original
|
55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
|
PDF
|
ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
|
Original
|
55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
|
OCR Scan
|
250ns
250ns
55N50
50N50
50N50
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
|
OCR Scan
|
55N50
50N50
250ns
O-264
|
PDF
|
Untitled
Abstract: No abstract text available
Text: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage
|
OCR Scan
|
SML50G60BN
SML50G50BN
SML50G60/50G50BN
|
PDF
|
transistor TT 2146
Abstract: APT50G50BN APT50G60BN APT50G60 538J
Text: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
|
OCR Scan
|
APT50G60BN
APT50G50BN
O-247AD
transistor TT 2146
APT50G60
538J
|
PDF
|
Net ARM 50
Abstract: PD50F5
Text: FRD MODULE PD50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings
|
Original
|
PD50F5
0A/500V/trr
90nsec
E187184
PD50F5
Net ARM 50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FRD MODULE PD50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings
|
Original
|
E187184
0A/500V/trr
90nsec
PD50F5
PD50F5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FRD MODULE PC50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Cathode Common * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Voltage Rating
|
Original
|
E187184
0A/500V/trr
90nsec
PC50F5
PC50F5
|
PDF
|
cal 3200
Abstract: PC50F5
Text: FRD MODULE PC50F5 50A/500V/trr:90nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Cathode Common * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Voltage Rating
|
Original
|
PC50F5
0A/500V/trr
90nsec
E187184
PC50F5
cal 3200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DESIGN UNITS> METRIC nn [INCHES] -4 | P REVISION — 1-FIRST ANGLE PROJECTION REV. DESCRPTIDN M.O DATE BY. ECN ND. 8.0 I- 1 ! I- 1 D M 50 500V 6mm2 C€ 300V 50A I 20~8 AWG j C ^U S Made in China NOTES: 1. Rating: UL 2. 3. 4. 5. 6. 300V IEC 500V 41 A
|
OCR Scan
|
500MO,
DC1000V
DM50-BU
DM50-LK
DM50-GY
DM50-GY/DM50-BU/DM50-LK
QE/1201
QJ/1208
04E17
ON/1E04
|
PDF
|
IXFN64N50PD2
Abstract: 64N50P SOT227B package 64N50
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
|
Original
|
IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
IXFN64N50PD2
SOT227B package
64N50
|
PDF
|
IXFN64N50PD2
Abstract: IXFN64N50PD3
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A 85m 200ns
|
Original
|
IXFN64N50PD2
IXFN64N50PD3
E153432
200ns
IXFN64N50PD2
IXFN64N50PD3
|
PDF
|
|
|
apt50m85jvr
Abstract: No abstract text available
Text: APT50M85JVR 50A 0.085Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVR
OT-227
E145592
apt50m85jvr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50M85JVFR Ω 50A 0.085Ω 500V POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVFR
OT-227
E145592
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50M85JVFR 50A 0.085Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVFR
OT-227
E145592
|
PDF
|
APT50M85JVFR
Abstract: FREDFET
Text: APT50M85JVFR Ω 50A 0.085Ω 500V POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVFR
OT-227
E145592
APT50M85JVFR
FREDFET
|
PDF
|
APT50M85JVR
Abstract: No abstract text available
Text: APT50M85JVR 50A 0.085Ω Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVR
OT-227
APT50M85JVR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT50M85JVR 50A 0.085Ω Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
APT50M85JVR
OT-227
|
PDF
|
Untitled
Abstract: No abstract text available
Text: i . | p u - y ia u y B International l R Rectifier SMPS M0SFET IR F B 11N 50A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V d ss 500V R d s (o n ) m a x 0.52£2 Id
|
OCR Scan
|
|
PDF
|
nte5570
Abstract: NTE5572 NTE5574 500v 50a scr 50A 1200V SCR SCR Gate Drive
Text: NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier SCR 125 Amp, TO94 Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
|
Original
|
NTE5570,
NTE5572,
NTE5574
NTE5570
NTE5572
nte5570
NTE5572
NTE5574
500v 50a scr
50A 1200V SCR
SCR Gate Drive
|
PDF
|
EVK31-050
Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Text: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr
|
OCR Scan
|
480VAC
50AV75A,
fa100
ETG81-050
ETK81-050
ETK85-050
ETL81-050
ET127*
ETM36-030*
ETN36-030*
EVK31-050
EVL31-050
EVM31-050
EVF31T-050A
EVK71-050
EV1234M
EVG31-050
ET1266M
|
PDF
|
M505012FV
Abstract: E72445 M505012F
Text: Series M50 50-100Amp • SCR/DIODE Modules The M50 Series modules utilize highly efficient thermal management of provide high surge capability, long lifetime and reliable performance. Available in eight standard circuits, all models come in an industry standard package, provide 2500Vrms from all terminals to the
|
Original
|
50-100Amp
2500Vrms
E72445)
M505012FV
M505012FV
E72445
M505012F
|
PDF
|
