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    501 MOSFET TRANSISTOR Search Results

    501 MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    501 MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6901D

    Abstract: XC6901 p-channel mosfet with diode sot89-5 ta1527 marking 005c
    Text: XC6901 Series ETR0343-005c 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		PDF XC6901 ETR0343-005c 200mA XC6901D p-channel mosfet with diode sot89-5 ta1527 marking 005c

    XC6901D331MR-G

    Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2
    Text: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		PDF XC6901 200mA ETR03043-006 XC6901D331MR-G XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G 03VVOUT2

    panasonic inverter 707 manual

    Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
    Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change


    Original     		PDF 78K0/IB2 78K0/IB2 ZBB-CE-09-0011-E TC74VHC125F TC74VHC14F 3386F-1-104TLF CMR309T-16 000MABJ-UT panasonic inverter 707 manual traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor

    8 bit Flash-ADC

    Abstract: 0.5 MIETEC CMOS Fuga15d 512x512 pixel random addressable image sensor die Fuga15d 512x512 FUGA15 512X512 Fuga15d 16 bit Flash-ADC photo type sensor most use in industry light sensor abstract
    Text: Random addressable active pixel image sensors Bart Dierickx, Danny Scheffer, Guy Meynants, Werner Ogiers, Jan Vlummens IMEC Kapeldreef 75, B-3001 Leuven, Belgium tel.: +32 16 281 492 fax: +32 16 281 501 [email protected] http://www.imec.be/bo invited paper AEFPAC / EUROPTO96 / SPIE, Berlin, 10 oct 1996


    Original     		PDF B-3001 EUROPTO96 8 bit Flash-ADC 0.5 MIETEC CMOS Fuga15d 512x512 pixel random addressable image sensor die Fuga15d 512x512 FUGA15 512X512 Fuga15d 16 bit Flash-ADC photo type sensor most use in industry light sensor abstract

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage

    BUK107-50GL

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50GL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50GL SC13a SCA54 137087/1200/01/pp11 BUK107-50GL

    4466 8 pin mosfet pin voltage

    Abstract: 501 mosfet transistor BUK107-50DL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DL SC13a SCA54 137087/1200/02/pp12 4466 8 pin mosfet pin voltage 501 mosfet transistor BUK107-50DL

    mj 1504 transistor

    Abstract: transistor mj 1504 MTV25N50E t2 AN569 MTV25N50E SMD310
    Text: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E−FET. Power Field Effect Transistor D3PAK for Surface Mount MTV25N50E TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		PDF MTV25N50E/D MTV25N50E MTV25N50E/D* mj 1504 transistor transistor mj 1504 MTV25N50E t2 AN569 MTV25N50E SMD310

    MTV25N50E t2

    Abstract: AN569 MTV25N50E SMD310
    Text: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV25N50E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTV25N50E/D MTV25N50E MTV25N50E/D* MTV25N50E t2 AN569 MTV25N50E SMD310

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    Dual-Gate Mosfet

    Abstract: PHILIPS MOSFET MARKING 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 n channel depletion MOSFET 4466 8 pin mosfet pin voltage philips mosfet
    Text: Datum 971203 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande


    Original     		PDF BF990A OT143 BF990A SCA52 117061/00/02/pp8 Dual-Gate Mosfet PHILIPS MOSFET MARKING 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 n channel depletion MOSFET 4466 8 pin mosfet pin voltage philips mosfet

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    til 701

    Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
    Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of


    OCR Scan     		PDF 100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral

    Untitled

    Abstract: No abstract text available
    Text: UNITRO.DE corp 9347963 U N ïT r ÔDE CORP 92D 10500 D /-3 ?-// POWER MOSFET TRANSISTORS , JTX,JTXVg « 400 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF MIL-S-19500/542A

    25N50E

    Abstract: 501 mosfet transistor mount chip transistor 332
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = °-200 OHM N-Channel Enhancement-Mode Silicon Gate The D3pAK package has the capability of housing the largest chip


    OCR Scan     		PDF

    UFND210

    Abstract: UFND213
    Text: UFND210 UFND213 POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The U nitrode power MOSFET design utilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rd s m and a high transconductance. FEATURES • For A utom atic Insertion


    OCR Scan     		PDF UFND210 UFND213 UFND210 UFND213

    K1095

    Abstract: K109 transco
    Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK109-50GL For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a


    OCR Scan     		PDF BUK109-50GL K1095 K109 transco

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTV25N50E/D TV25N

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DESC M S Kl [MNI.UY j o n c HIGH CURRENT, SUPER LOW DROPOUT FIXED VOLTAGE REGULATORS 8 1 7 0 Thompson Road Cicero, N.Y. 13039 ccmce o tn ltc j (315 699-9201 M/L-STD-1772 CERTIFIED FEATURES: • • • • • • • • 5010 Extremely Low Dropout Voltage 0 .4 5 V (9 10 Amps


    OCR Scan     		PDF ISO-9001 M/L-STD-1772 ofK5010-3

    Untitled

    Abstract: No abstract text available
    Text: u>p E Mob Advanced Linear Devices ALD4302A/ALD4302 QUAD CMOS COMPARATOR AND DRIVER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 4302 is a monolithic quad high performance voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of I0 12i2; low input bias


    OCR Scan     		PDF ALD4302A/ALD4302

    H295

    Abstract: H-294 H292
    Text: Data Sheet No. PD-9.720A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS Or IRHN715Q IRHN815Q N-CHANNEL MEGA RAD HARD 100 Volt, 0.055Q, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan     		PDF IRHN715Q IRHN815Q 1x105 1x106 H-297 IRHN7150, IRHN8150 H-298 H295 H-294 H292