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GCT Semiconductor Inc BG095-06-A-N-D 6W, 2.54MM PITCH SOCKET, SIL, TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BG095-06-A-N-D	Tube	1,729		1	1 $0.45 10 $0.45 100 $0.32237 1000 $0.25496 10000 $0.20898	Buy Now
Newark	BG095-06-A-N-D	Bulk	2,962		1	1 $0.547 10 $0.511 100 $0.397 1000 $0.349 10000 $0.349	Buy Now
Belden Inc 1506A-N3U1000 CBL COAX PLEN RG-59 20AWG 1000'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1506A-N3U1000				1,000	1 - 10 - 100 - 1000 $3.38439 10000 $3.38439	Buy Now
OMRON Industrial Automation R88L-EC-GW-0506-ANPS 50MM MAGNET IL LM NO CONN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R88L-EC-GW-0506-ANPS	Bulk			1	1 $2096.63 10 $2096.63 100 $2096.63 1000 $2096.63 10000 $2096.63	Buy Now
OMRON Corporation R88L-EC-GW-0506-ANPS 50MM MAGNET IL LM NO CONN - Bulk (Alt: R88LECGW0506ANPS)
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Avnet Americas	R88L-EC-GW-0506-ANPS	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Global Connector Technology BG095-06-A-N-D Board to Board & Mezzanine Connectors 6w, 2.54mm Pitch Socket, SIL, TH, Vert, Dual Beam, GF, Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BG095-06-A-N-D		573			1 $0.55 10 $0.391 100 $0.391 1000 $0.291 10000 $0.23	Buy Now

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506AN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SC-70-6 package Abstract: ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance Text: AND8345/D WDFN6 2x2 mCoolt 506AN Dual MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe ON Semiconductor APPLICATION NOTE Introduction Figure 3 depicts a minimum recommended pad pattern that confines an improved thermal area of drain connections	Original	AND8345/D 506AN SC-70-6 package ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance	PDF
E2 liu Abstract: wdfn6 506AN Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN−01 ISSUE E DATE 20 AUG 2010 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.	Original	506AN-01 506AN E2 liu wdfn6 506AN	PDF
NTLJD3119CTAG Abstract: NTLJD3119C NTLJD3119CTBG Text: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package	Original	NTLJD3119C SC-88 NTLJD3119C/D NTLJD3119CTAG NTLJD3119C NTLJD3119CTBG	PDF
NIS1050MNTBG Abstract: NIS1050 6x fet Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power	Original	NIS1050 NIS1050 NIS1050/D NIS1050MNTBG 6x fet	PDF
Untitled Abstract: No abstract text available Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package	Original	NTLJD3181PZ NTLJD3181PZ/D	PDF
Untitled Abstract: No abstract text available Text: NTLJD3183CZ Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package	Original	NTLJD3183CZ NTLJD3183CZ/D	PDF
NTLJF3118N Abstract: NTLJF3118NTAG NTLJF3118NTBG Text: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction	Original	NTLJF3118N SC-88 NTLJF3118N/D NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG	PDF
g3je Abstract: marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package	Original	NTLJD3181PZ SC-88 NTLJD3181PZ/D g3je marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG	PDF
NTLJD3115P Abstract: NTLJD3115PT1G NTLJD3115PTAG Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package	Original	NTLJD3115P SC-88 NTLJD3115P/D NTLJD3115P NTLJD3115PT1G NTLJD3115PTAG	PDF
Untitled Abstract: No abstract text available Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent	Original	NTLJF3117P SC-88 NTLJF3117P/D	PDF
JH MARKING CODE SCHOTTKY DIODE Abstract: No abstract text available Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent	Original	NTLJF3117P SC-88 NTLJF3117P/D JH MARKING CODE SCHOTTKY DIODE	PDF
Untitled Abstract: No abstract text available Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package	Original	NTLJD3115P NTLJD3115P/D	PDF
Untitled Abstract: No abstract text available Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power	Original	NIS1050 NIS1050 NIS1050/D	PDF
Untitled Abstract: No abstract text available Text: NTLJD4150P Power MOSFET −30 V, −3.4 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile < 0.8 mm for Easy Fit in Thin Environments	Original	NTLJD4150P NTLJD4150P/D	PDF

Untitled Abstract: No abstract text available Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction	Original	NTLJF4156N NTLJF4156N/D	PDF
NTLJD3115PT1G Abstract: tl 72 oz NTLJD3115P NTLJD3115PTAG 6X MOSFET Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package	Original	NTLJD3115P SC-88 NTLJD3115P/D NTLJD3115PT1G tl 72 oz NTLJD3115P NTLJD3115PTAG 6X MOSFET	PDF
6X MOSFET Abstract: NCP304 NUS1204MN Text: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to	Original	NUS1204MN NCP304 NUS1204MN/D 6X MOSFET	PDF
Untitled Abstract: No abstract text available Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction	Original	NTLJF4156N NTLJF4156N/D	PDF
NIS1050 Abstract: NIS1050MNTBG FET MARKING Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power	Original	NIS1050 NIS1050 NIS1050/D NIS1050MNTBG FET MARKING	PDF
NTLJF3117PTAG Abstract: NTLJF3117P NTLJF3117PT1G high current schottky diode Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent	Original	NTLJF3117P SC-88 NTLJF3117P/D NTLJF3117PTAG NTLJF3117P NTLJF3117PT1G high current schottky diode	PDF
Untitled Abstract: No abstract text available Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package	Original	NTLJD3115P SC-88 NTLJD3115P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction	Original	NTLJF4156N NTLJF4156N/D	PDF
Untitled Abstract: No abstract text available Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package	Original	NTLJD3115P SC-88 NTLJD3115P/D	PDF
Untitled Abstract: No abstract text available Text: NVLJD4007NZ Small Signal MOSFET 30 V, 245 mA, Dual, N−Channel, Gate ESD Protection, 2x2 WDFN Package http://onsemi.com Features • • • • • • Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small 2 x 2 mm Footprint	Original	NVLJD4007NZ AEC-Q101 NVLJD4007NZ/D	PDF

506AN Search Results

506AN Price and Stock

GCT Semiconductor Inc BG095-06-A-N-D

Belden Inc 1506A-N3U1000

OMRON Industrial Automation R88L-EC-GW-0506-ANPS

OMRON Corporation R88L-EC-GW-0506-ANPS

Global Connector Technology BG095-06-A-N-D

506AN Datasheets Context Search

SC-70-6 package

E2 liu

NTLJD3119CTAG

NIS1050MNTBG

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NTLJF3118N

g3je

NTLJD3115P

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JH MARKING CODE SCHOTTKY DIODE

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NTLJD3115PT1G

6X MOSFET

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NIS1050

NTLJF3117PTAG

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