Untitled
Abstract: No abstract text available
Text: RURG5060_F085 50A, 600V Ultrafast Rectifier Features 50A, 600V Ultrafast Rectifier • High Speed Switching trr=70ns(Typ. @ IF=50A ) The RURG5060_F085 is an ultrafast diode with soft recovery characteristics (trr< 90ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG5060
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Untitled
Abstract: No abstract text available
Text: RHRG5060_F085 50A, 600V Hyperfast Rectifier Features Max Ratings 600V, 50A • High Speed Switching ( trr=45ns(Typ.) @ IF=50A ) The RHRG5060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG5060
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DBA500G
Abstract: diode 50A
Text: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
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DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
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DBA500G
Abstract: No abstract text available
Text: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications
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DBA500G
ENA0699A
A0699-3/3
DBA500G
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Untitled
Abstract: No abstract text available
Text: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides
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PD-96990A
2N7585U2
IRHNA67264
IRHNA63264
90MeV/
MIL-STD-750,
MlL-STD-750,
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2n7585
Abstract: 2N7585U2
Text: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides
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PD-96990A
IRHNA67264
IRHNA63264
2N7585U2
90MeV/
MIL-STD-750,
MlL-STD-750,
2n7585
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QL5010
Abstract: QL5010S MT3516W 50a rectifier circuit single phase bridge QL5010 50A, 1000V BRIDGE-RECTIFIER BRIDGE-RECTIFIER DIODE RECTIFIER BRIDGE SINGLE single phase bridge rectifier module E30441
Text: Power Semiconductors Components 1- Bridge rectifier QL5010 single phase bridge rectifier with heatsink Outline Dimension and Terminal Function Drawing 1 Brushless DC Fan Name System Circuit Structure Drawing Ratings • ■ ■ ■ ■ Rated average output current： 50A
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QL5010
current600A
temperature150
VRRM1000V
20PCS/box
CompT3510W
MT3512W
MT3514W
MT3516W
50/60HZ
QL5010S
MT3516W
50a rectifier circuit
single phase bridge QL5010
50A, 1000V BRIDGE-RECTIFIER
BRIDGE-RECTIFIER
DIODE RECTIFIER BRIDGE SINGLE
single phase bridge rectifier module
E30441
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PD-96990
Abstract: IRHNA67264 IRHNA63264 IR 224A
Text: PD-96990 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67264 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 0.040Ω 50A 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides
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Original
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PD-96990
IRHNA67264
IRHNA67264
IRHNA63264
90MeV/
MIL-STD-750,
MlL-STD-750,
PD-96990
IRHNA63264
IR 224A
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SHD374651
Abstract: VF10 VF11 VF12 VF13
Text: SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - LOW DROP SILICON RECTIFIER DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package. Features: • • • • Designed for Battery Cell Bypass application Low package inductance
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SHD374651
SHD374651
VF10
VF11
VF12
VF13
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202E
Abstract: GBP005 GBP10 KBP005 KBP01 KBP02 KBP04 KBP06
Text: CE GBP005 THRU GBP10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 50A peak
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GBP005
GBP10
UL-94
KBP005
KBP01
KBP02
KBP04
KBP06
202E
GBP10
KBP005
KBP01
KBP02
KBP04
KBP06
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BRIDGE RECTIFIER df10
Abstract: DF005 202E DF01 DF02 DF04 DF06 DF10 DF-10 DF-005
Text: CE DF005 THRU DF10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:1.0A FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 50A peak
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DF005
UL-94
DF005
BRIDGE RECTIFIER df10
202E
DF01
DF02
DF04
DF06
DF10
DF-10
DF-005
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR KBPC40, 50S SERIES 40, 50A IN-LINE BRIDGE RECTIFIER Data sheet 1303, Rev. Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBPC40,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: PBPC301 - PBPC307 3.0A BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Diffused Junction High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application
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PBPC301
PBPC307
E95060
MIL-STD-202,
DS21345
PBPC301-PBPC307
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BRIDGE RECTIFIER
Abstract: KBPC1005 "Bridge Rectifier" KBPC106 BRIDGE-RECTIFIER BRIDGE-RECTIFIER operation KBPC106 202E KBPC101 KBPC102 KBPC104
Text: CE KBPC1005 THRU KBPC110 CHENYI ELECTRONICS SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:3.0A FEATURES Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA . Terminal: Plated leads solderable per
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KBPC1005
KBPC110
UL-94
KBPC101
KBPC102
KBPC104
KBPC106
KBPC108
BRIDGE RECTIFIER
"Bridge Rectifier" KBPC106
BRIDGE-RECTIFIER
BRIDGE-RECTIFIER operation
202E
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Untitled
Abstract: No abstract text available
Text: DB101 - DB107 1.0A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • UL Recognized Component Ideal for Printed Circuit Board Glass Passivated Chip Junctions, Surge Overload Rating of 50A Peak Simple, Compact Structure for Trouble-free
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DB101
DB107
MIL-STD-202,
DS21211
DB101-DB107
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BRIDGE-RECTIFIER w10
Abstract: w08 bridge rectifier W04 bridge rectifier bridge rectifier w02 rectifier bridge w10 transistor w04 50A, 1000V BRIDGE-RECTIFIER Bridge W005 202E W005
Text: CE W005 THRU W10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:1.0A FEATURES Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA . Terminal: Plated leads solderable per
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UL-94
BRIDGE-RECTIFIER w10
w08 bridge rectifier
W04 bridge rectifier
bridge rectifier w02
rectifier bridge w10
transistor w04
50A, 1000V BRIDGE-RECTIFIER
Bridge W005
202E
W005
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E94661
Abstract: PBPC301 PBPC302 PBPC307
Text: PBPC301 - PBPC307 3.0A BRIDGE RECTIFIER Features • · · · · High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V H Ideal for Printed Circuit Board Application UL Listed Under Recognized Component Index, File
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PBPC301
PBPC307
E94661
J-STD-020C
MIL-STD-202,
DS21345
PBPC301-PBPC307
E94661
PBPC302
PBPC307
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60AC120A
Abstract: No abstract text available
Text: IN TE RN AT IONAL RECTIFIER ~55 4855452 INTERNATIONAL RECTIFIER DE J 4 Ô S 5 4 S 2 □□□4fl70 55C 04870 D Data Sheet No. E2584B INTERNATIONAL RECTIFIER IO R -r-zs-is T50AC-A, 50AC-A SERIES 50A power teriaca Major Ratings and Characteristics Description
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OCR Scan
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4fl70
E2584B
T50AC-A,
50AC-A
T50AC-A
50AC-A'
T50AC-A
60AC120A
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BRIDGE-RECTIFIER compact
Abstract: DB101 DB107 DB107 DB-107
Text: DB101 - DB107 1.0A GLASS PASSIVATED BRIDGE RECTIFIER Features UL Recognized Component Ideal for Printed Circuit Board Glass Passivated Chip Junctions, Surge Overload Rating of 50A Peak Simple, Compact Structure for Trouble-free Performance Plastic Package - UL Flammability
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OCR Scan
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DB101
DB107
MIL-STD-202,
300ms
DS21211
DB101-DB107
BRIDGE-RECTIFIER compact
DB107
DB107 DB-107
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6-32UNf
Abstract: T50AC120A 50AC-A T50AC40A t50ac60a D-32 T50AC-A 2h8a T60AC-A 1250A2s
Text: INT ERN ATI ON AL RECTIFIER 4855452 ~55 DE J 4 A S 5 4 S 2 55C 0 4 8 7 0 INTERNATIONAL RECTIFIER □□□4fl70 D Data Sheet No. E2584B INTERNATIONAL RECTIFIER IOR T50AC-A, 5 0 AC-A SERIES 50A power triaca Major Ratings and Characteristics Description T50AC-A
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OCR Scan
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S54S2
4fl70
E2584B
50AC-A
T50AC-A
50AC-A;
T50AC.
6-32UNf
T50AC120A
T50AC40A
t50ac60a
D-32
2h8a
T60AC-A
1250A2s
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W10G bridge rectifier
Abstract: No abstract text available
Text: W005G -W10G 1.5A GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction Diffused Junction Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Ideal for Printed Circuit Boards Case to Terminal Isolation Voltage 1500V
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OCR Scan
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W005G
-W10G
E95060
IL-STD-202,
DS21202
W10G bridge rectifier
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W10G bridge rectifier
Abstract: W005G W01G W02G W04G W06G W08G W10G
Text: 3IÌB5 W005G - W10G 1.5A GLASS PASSIVATED BRIDGE RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Ideal for Printed Circuit Boards
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OCR Scan
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W005G
E95060
MIL-STD-202,
300ms
DS21202
W10G bridge rectifier
W01G
W02G
W04G
W06G
W08G
W10G
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically
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OCR Scan
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0Dlb554
104MT.
554S2
001bS31
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PDF
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PBPC301
Abstract: PBPC307
Text: PBPC301 • PBPC307 /LI T E M I 17 / POWERSEMICONDUCTOR - I 3.0A BRIDGE RECTIFIER Features • Diffused Junction High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application
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OCR Scan
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PBPC301
PBPC307
E95060
MIL-STD-202,
DS21345
PBPC301-PBPC307
PBPC307
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PDF
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