Untitled
Abstract: No abstract text available
Text: RURG5060_F085 50A, 600V Ultrafast Rectifier Features 50A, 600V Ultrafast Rectifier • High Speed Switching trr=70ns(Typ. @ IF=50A ) The RURG5060_F085 is an ultrafast diode with soft recovery characteristics (trr< 90ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG5060
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Untitled
Abstract: No abstract text available
Text: RHRG5060_F085 50A, 600V Hyperfast Rectifier Features Max Ratings 600V, 50A • High Speed Switching ( trr=45ns(Typ.) @ IF=50A ) The RHRG5060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG5060
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DBA500G
Abstract: diode 50A
Text: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
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DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
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DBA500G
Abstract: No abstract text available
Text: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications
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DBA500G
ENA0699A
A0699-3/3
DBA500G
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Untitled
Abstract: No abstract text available
Text: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides
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PD-96990A
2N7585U2
IRHNA67264
IRHNA63264
90MeV/
MIL-STD-750,
MlL-STD-750,
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2n7585
Abstract: 2N7585U2
Text: PD-96990A 2N7585U2 IRHNA67264 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67264 Radiation Level 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 300K Rads (Si) 0.040Ω 50A International Rectifier’s R6TM technology provides
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PD-96990A
IRHNA67264
IRHNA63264
2N7585U2
90MeV/
MIL-STD-750,
MlL-STD-750,
2n7585
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QL5010
Abstract: QL5010S MT3516W 50a rectifier circuit single phase bridge QL5010 50A, 1000V BRIDGE-RECTIFIER BRIDGE-RECTIFIER DIODE RECTIFIER BRIDGE SINGLE single phase bridge rectifier module E30441
Text: Power Semiconductors Components 1- Bridge rectifier QL5010 single phase bridge rectifier with heatsink Outline Dimension and Terminal Function Drawing 1 Brushless DC Fan Name System Circuit Structure Drawing Ratings • ■ ■ ■ ■ Rated average output current： 50A
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QL5010
current600A
temperature150
VRRM1000V
20PCS/box
CompT3510W
MT3512W
MT3514W
MT3516W
50/60HZ
QL5010S
MT3516W
50a rectifier circuit
single phase bridge QL5010
50A, 1000V BRIDGE-RECTIFIER
BRIDGE-RECTIFIER
DIODE RECTIFIER BRIDGE SINGLE
single phase bridge rectifier module
E30441
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PD-96990
Abstract: IRHNA67264 IRHNA63264 IR 224A
Text: PD-96990 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67264 100K Rads (Si) RDS(on) 0.040Ω ID 50A IRHNA63264 0.040Ω 50A 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides
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PD-96990
IRHNA67264
IRHNA67264
IRHNA63264
90MeV/
MIL-STD-750,
MlL-STD-750,
PD-96990
IRHNA63264
IR 224A
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SHD374651
Abstract: VF10 VF11 VF12 VF13
Text: SENSITRON SEMICONDUCTOR SHD374651 TECHNICAL DATA DATA SHEET 5160, REV. - LOW DROP SILICON RECTIFIER DESCRIPTION: 200V 50A Hermetic low drop rectifier in a SHD-3 HP package. Features: • • • • Designed for Battery Cell Bypass application Low package inductance
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SHD374651
SHD374651
VF10
VF11
VF12
VF13
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60AC120A
Abstract: No abstract text available
Text: IN TE RN AT IONAL RECTIFIER ~55 4855452 INTERNATIONAL RECTIFIER DE J 4 Ô S 5 4 S 2 □□□4fl70 55C 04870 D Data Sheet No. E2584B INTERNATIONAL RECTIFIER IO R -r-zs-is T50AC-A, 50AC-A SERIES 50A power teriaca Major Ratings and Characteristics Description
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4fl70
E2584B
T50AC-A,
50AC-A
T50AC-A
50AC-A'
T50AC-A
60AC120A
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202E
Abstract: GBP005 GBP10 KBP005 KBP01 KBP02 KBP04 KBP06
Text: CE GBP005 THRU GBP10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 50A peak
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GBP005
GBP10
UL-94
KBP005
KBP01
KBP02
KBP04
KBP06
202E
GBP10
KBP005
KBP01
KBP02
KBP04
KBP06
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BRIDGE-RECTIFIER compact
Abstract: DB101 DB107 DB107 DB-107
Text: DB101 - DB107 1.0A GLASS PASSIVATED BRIDGE RECTIFIER Features UL Recognized Component Ideal for Printed Circuit Board Glass Passivated Chip Junctions, Surge Overload Rating of 50A Peak Simple, Compact Structure for Trouble-free Performance Plastic Package - UL Flammability
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DB101
DB107
MIL-STD-202,
300ms
DS21211
DB101-DB107
BRIDGE-RECTIFIER compact
DB107
DB107 DB-107
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6-32UNf
Abstract: T50AC120A 50AC-A T50AC40A t50ac60a D-32 T50AC-A 2h8a T60AC-A 1250A2s
Text: INT ERN ATI ON AL RECTIFIER 4855452 ~55 DE J 4 A S 5 4 S 2 55C 0 4 8 7 0 INTERNATIONAL RECTIFIER □□□4fl70 D Data Sheet No. E2584B INTERNATIONAL RECTIFIER IOR T50AC-A, 5 0 AC-A SERIES 50A power triaca Major Ratings and Characteristics Description T50AC-A
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S54S2
4fl70
E2584B
50AC-A
T50AC-A
50AC-A;
T50AC.
6-32UNf
T50AC120A
T50AC40A
t50ac60a
D-32
2h8a
T60AC-A
1250A2s
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BRIDGE RECTIFIER df10
Abstract: DF005 202E DF01 DF02 DF04 DF06 DF10 DF-10 DF-005
Text: CE DF005 THRU DF10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:1.0A FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 50A peak
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DF005
UL-94
DF005
BRIDGE RECTIFIER df10
202E
DF01
DF02
DF04
DF06
DF10
DF-10
DF-005
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR KBPC40, 50S SERIES 40, 50A IN-LINE BRIDGE RECTIFIER Data sheet 1303, Rev. Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBPC40,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: PBPC301 - PBPC307 3.0A BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Diffused Junction High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application
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PBPC301
PBPC307
E95060
MIL-STD-202,
DS21345
PBPC301-PBPC307
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W10G bridge rectifier
Abstract: W005G W01G W02G W04G W06G W08G W10G
Text: 3IÌB5 W005G - W10G 1.5A GLASS PASSIVATED BRIDGE RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Ideal for Printed Circuit Boards
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W005G
E95060
MIL-STD-202,
300ms
DS21202
W10G bridge rectifier
W01G
W02G
W04G
W06G
W08G
W10G
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically
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0Dlb554
104MT.
554S2
001bS31
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BRIDGE RECTIFIER
Abstract: KBPC1005 "Bridge Rectifier" KBPC106 BRIDGE-RECTIFIER BRIDGE-RECTIFIER operation KBPC106 202E KBPC101 KBPC102 KBPC104
Text: CE KBPC1005 THRU KBPC110 CHENYI ELECTRONICS SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:3.0A FEATURES Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA . Terminal: Plated leads solderable per
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KBPC1005
KBPC110
UL-94
KBPC101
KBPC102
KBPC104
KBPC106
KBPC108
BRIDGE RECTIFIER
"Bridge Rectifier" KBPC106
BRIDGE-RECTIFIER
BRIDGE-RECTIFIER operation
202E
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DF04
Abstract: No abstract text available
Text: DF005 - DF10 1.0A BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Designed for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0
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DF005
E95060
MIL-STD-202,
DS21212
DF005-DF10
DF04
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Untitled
Abstract: No abstract text available
Text: DB101 - DB107 1.0A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • UL Recognized Component Ideal for Printed Circuit Board Glass Passivated Chip Junctions, Surge Overload Rating of 50A Peak Simple, Compact Structure for Trouble-free
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DB101
DB107
MIL-STD-202,
DS21211
DB101-DB107
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PBPC301
Abstract: PBPC307
Text: PBPC301 • PBPC307 /LI T E M I 17 / POWERSEMICONDUCTOR - I 3.0A BRIDGE RECTIFIER Features • Diffused Junction High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application
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PBPC301
PBPC307
E95060
MIL-STD-202,
DS21345
PBPC301-PBPC307
PBPC307
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PDF
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BRIDGE-RECTIFIER w10
Abstract: w08 bridge rectifier W04 bridge rectifier bridge rectifier w02 rectifier bridge w10 transistor w04 50A, 1000V BRIDGE-RECTIFIER Bridge W005 202E W005
Text: CE W005 THRU W10 CHENYI ELECTRONICS SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:1.0A FEATURES Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA . Terminal: Plated leads solderable per
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UL-94
BRIDGE-RECTIFIER w10
w08 bridge rectifier
W04 bridge rectifier
bridge rectifier w02
rectifier bridge w10
transistor w04
50A, 1000V BRIDGE-RECTIFIER
Bridge W005
202E
W005
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E94661
Abstract: PBPC301 PBPC302 PBPC307
Text: PBPC301 - PBPC307 3.0A BRIDGE RECTIFIER Features • · · · · High Current Capability Surge Overload Rating to 50A Peak High Case Dielectric Strength of 1500V H Ideal for Printed Circuit Board Application UL Listed Under Recognized Component Index, File
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PBPC301
PBPC307
E94661
J-STD-020C
MIL-STD-202,
DS21345
PBPC301-PBPC307
E94661
PBPC302
PBPC307
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