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    50N60B2D1 Price and Stock

    IXYS Corporation IXGK50N60B2D1

    IGBT PT 600V 75A TO-264
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    IXYS Corporation IXGX50N60B2D1

    IGBT PT 600V 75A PLUS247
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    IXYS Corporation IXGR50N60B2D1

    IGBT 600V 68A ISOPLUS247
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    50N60B2D1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGR50N60B2D1

    Abstract: 50N60B2
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 ISOPLUS247 2x61-06A 065B1 728B1 IXGR50N60B2D1 PDF

    IXGX50N60B2D1

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60B2D1 IC110 IF110 O-264 PLUS247 0-06A 065B1 728B1 IXGX50N60B2D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 Symbol Test Conditions V CES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 50N60B2 50N60B2D1 ISOPLUS247 IC110 IF110 50N60B2D1 2x61-06A 065B1 728B1 PDF

    2X61 06a

    Abstract: 50N60 IF110 ISOPLUS247 IXGR50N60B2D1
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 50N60B2 50N60B2D1 IC110 IF110 50N60B2D1 2x61-06A 065B1 728B1 123B1 2X61 06a 50N60 IF110 ISOPLUS247 IXGR50N60B2D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60B2D1 IC110 O-264 IF110 PLUS247 0-06A 065B1 728B1 PDF

    50N60B2

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60B2D1 IC110 IF110 O-264 PLUS247 0-06A 065B1 728B1 50N60B2 PDF

    50N60B2D1

    Abstract: 50n60 IXGX50N60B2D1 50N60B2 60-06A IF110 PLUS247 ixgk50n60b2d1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60B2D1 IC110 IF110 0-06A 065B1 728B1 123B1 728B1 50n60 IXGX50N60B2D1 50N60B2 60-06A IF110 PLUS247 ixgk50n60b2d1 PDF

    IXGK50N60A2D1

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode IXGK50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60A2D1 IC110 O-264 IF110 50N60B2D1 PLUS247 405B2 50N60A2D1 PDF

    50n60

    Abstract: 50N60A IF110 PLUS247
    Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		50N60A2D1 IC110 IF110 50N60B2D1 O-264 405B2 50N60A2D1 50n60 50N60A IF110 PLUS247 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF