RFG60P05E
Abstract: TB334
Text: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization
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RFG60P05E
TA09835.
O-247
175oC
RFG60P05E
TB334
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Untitled
Abstract: No abstract text available
Text: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes
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RFG60P05E
TA09835.
0-030i2
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40V 60A MOSFET
Abstract: RFG60P05E TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFG60P05E
O-247
175oC
TB334
40V 60A MOSFET
RFG60P05E
TB334
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RFG60P05E
Abstract: TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFG60P05E
O-247
175oC
TB334
RFG60P05E
TB334
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50V 60A MOSFET
Abstract: RFG60P05E 124E-12
Text: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model
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RFG60P05E
O-247
175oC
RFG60P05E
15e-10
1e-30
42e-4
85e-3
69e-6)
50V 60A MOSFET
124E-12
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RFG60P05E
Abstract: No abstract text available
Text: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve
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RFG60P05E
TA09835.
0-030Q
RFG60P05E
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated
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RFG60P05E
O-247
11e-1
34e-3TRS2
46e-12)
15e-10
1e-30
42e-4
85e-3
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-1R8-HP Single Output Half-brick MILITARY COTS DC-DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 1.8V Output 60A Output 87% @ 30A / 83% @ 60A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings
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MCOTS-C-28-1R8-HP
6-40V
6-50V
-C-28-1R
Th545
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Eficiency Full Power Operation: -55°C to +100°C The MilQor series of Mil-COTS DC/DC converters brings
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MCOTS-C-28-05-HZ
6-40V
6-50V
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mcots-c-28-05-hz
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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MCOTS-C-28-05-HZ
6-40V
6-50V
-28-05-H
MCOTS-C-28-05-HZ
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PDF
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-1R8-HP Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 1.8V Output 60A Output 87% @ 30A / 83% @ 60A Eficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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MCOTS-C-28-1R8-HP
6-40V
6-50V
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PDF
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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Original
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MCOTS-C-28-05-HZ
6-40V
6-50V
-28-05-H
MCOTS-C-28-05-HZ
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PDF
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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Original
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MCOTS-C-28-05-HZ
6-40V
6-50V
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PDF
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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Original
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MCOTS-C-28-05-HZ
6-40V
6-50V
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PDF
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28-05-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 5V Output 60A Output 93% @ 30A / 92% @ 60A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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Original
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MCOTS-C-28-05-HZ
6-40V
6-50V
-28-05-H
MCOTS-C-28-05-HZ
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60P05E
Abstract: No abstract text available
Text: RFG60P05E RFG60P06E ÎD H a r r is P-Channel Enhancem ent-M ode Power Field-Effect Transistors MegaFETs January 1994 F ea tu re s • RFG60P05E = -60A, -50V, Package rD S ( 0 n) T O -2 4 7 T O P VIEW = 0.026ÎÎ • RFG 60P06E = -60A, -60V, rD S(0n) = 0.030fl
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RFG60P05E
RFG60P06E
RFG60P05E
60P06E
030fl
60P05E
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N05 Power MOSFET 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N05
UTT60N05
UTT60N05L-TA3-T
UTT60N05G-TA3-T
QW-R502-662
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60n05
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.
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60N05
60N05
130nC)
60N05L-TA3-T
60N05G-TA3-T
QW-R502-716
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CSD19531KCS
Abstract: No abstract text available
Text: CSD19531KCS www.ti.com SLPS407 – SEPTEMBER 2013 100V N-Channel NexFET Power MOSFETs Check for Samples: CSD19531KCS FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant
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CSD19531KCS
SLPS407
O-220
CSD19531KCS
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Power MOSFETs
Abstract: p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet
Text: i n t e r cil P-Channel Standard Gate _ Power MOSFETs | I m P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s.
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RFD15P05,
RFD15P05SM,
RFP15P05
RFD15P06,
RFD15P06SM,
RFP15P06
RFD8P05,
RFD8P05SM,
RFP8P05
RFD8P06E,
Power MOSFETs
p-channel
mosfet p-channel 8a
RFD8P05SM
rfp12p10
30V 60A power p MOSFET
15a 50v p-channel mosfet
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an 80171
Abstract: K3834 100V 60A N CHANNEL MOSFET 2SK3834
Text: 2SK3834 Ordering number : ENN8017 2SK3834 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.
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2SK3834
ENN8017
an 80171
K3834
100V 60A N CHANNEL MOSFET
2SK3834
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100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
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IRFU9110,
IRFR9110
IRFU9120,
IRFR9120
IRFR9220,
IRFU9220
RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD15P05,
100V 60A Mosfet
50V 60A MOSFET
P-Channel 200V MOSFET
MOSFET ESD Rated
P-Channel
451 MOSFET
Pchannel
15a 50v p-channel mosfet
P-Channel 60V MOSFET
P-Channel Enhancement-Mode
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SSH60N10
Abstract: 21133 250M SSH60N08
Text: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSH60N10/08
SSH60N10
SSH60N08
21133
250M
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PDF
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RU1HP60R
Abstract: ruichips
Text: RU1HP60R P-Channel Advanced Power MOSFET Features Pin Description • -100V/-60A, RDS ON =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
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RU1HP60R
-100V/-60A,
RU1HP60R
ruichips
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