SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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V53C318160A
Abstract: No abstract text available
Text: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns
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V53C318160A
16-bit
cycles/16
cycles/256
V53C318160A
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V53C316165A
Abstract: No abstract text available
Text: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C316165A
16-bit
cycles/64
42-pin
50/44-pin
V53C316165A
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HYB3116165BSJ
Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BSJ/
HYB5116165
HYB3116165
HYB5118165
HYB3118165
HYB3116165BSJ
HYB3118165
HYB3118165BSJ
HYB5118165
P-TSOP
5118165BSJ-60
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )
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16-Bit
Y//77777/
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Untitled
Abstract: No abstract text available
Text: E2G0151-18-X2 O K I Semiconductor This version: Oct. 1998 M SM 5118165D/DSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5118165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5118165D/DSL achieves high integration, high-speed operation, and
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E2G0151-18-X2
5118165D/DSL
576-Word
16-Bit
MSM5118165D/DSL
42-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
3210B5BS/BSG
5118165BJ
3210B
THM3210B5BS/BSG-60/70
M3210B5BS/BSG
DM04020695
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HM5118165J6
Abstract: No abstract text available
Text: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers
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HM5118165
1048576-word
16-bit
ADE-203-636B
576-word
16-bit.
42-pin
50-pin
ns/60
HM5118165J6
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5118165
Abstract: No abstract text available
Text: 5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh HITACHI ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word X 16-bit. It employs the m ost advanced 0.5 Jim CMOS technology for high performance and low power. The H M 5118165 offers
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HM5118165
16-bit)
ADE-203-636D
576-word
16-bit.
42-pin
50-pin
ns/60
ns/70
mW/935
5118165
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Untitled
Abstract: No abstract text available
Text: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The HM 5118165 offers
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OCR Scan
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PDF
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HM5118165
1048576-word
16-bit
ADE-203-636B
576-word
16-bit.
42-pin
50-pin
ns/60
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5116 RAM
Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)
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16-Bit
5116165BSJ
5118165BSJ
HYB3118165BSJ-50)
HYB3118165BSJ-60)
I/01-I/016
16-EDO
777777yÃ
5116 RAM
bsj7
siemens fog
mug 14 431
TNC 24 mk 2
HYB3116165BSJ-50
HYB3116165BSJ-60
HYB3116165BSJ-70
HYB3118165BSJ-50
HYB3118165BSJ-60
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SIEMENS BST
Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
HYB5118165
HYB3118165
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
SIEMENS BST
SIEMENS BSt L 45 100
BST50
code marking rah
SIEMENS BST 10 20
Q1107
SIEMENS BST H
siemens BST H 04 40
SIEMENS BST P
SIEMENS BST L
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Untitled
Abstract: No abstract text available
Text: ADE-203-373 Z 5118165A/AL Series 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary H I TI MA CU Hm I Rev0° m T he H itachi H M 5118165A /A L is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology
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ADE-203-373
576-word
16-bit
HM5118165A/AL
HM5118165AJ-7
HM5118165AJ-8
HM5118165ALJ-7
HM5118165ALJ-8
HM5118165ATT-7
HM5118165ATT-8
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SIEMENS BST 68
Abstract: BST50 3118165 SIEMENS BST Q
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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OCR Scan
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PDF
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SIEMENS BST 68
BST50
3118165
SIEMENS BST Q
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e5as
Abstract: HM5118165AJ-7 HM5118165AJ-8 HM5118165ALJ-8 HM5118165ALTT-7 HM5118165ALTT-8 HM5118165ATT-7 HM5118165ATT-8
Text: &DE“2 3=373 Z H M 5 1 I 8 Î 6 5 A /A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 20,1995 M l n . The H itachi H M 5118165A /AL is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology
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HMS11S16SA/AL
576-word
16-bit
HM5118165A/AL
16-bit.
mW/715
002b7b4
MMS1183L65A/AL
e5as
HM5118165AJ-7
HM5118165AJ-8
HM5118165ALJ-8
HM5118165ALTT-7
HM5118165ALTT-8
HM5118165ATT-7
HM5118165ATT-8
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Untitled
Abstract: No abstract text available
Text: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The 5118165B offers Extended
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
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5118165TT-6
Abstract: M5118165
Text: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 flm CMOS technology for high performance and low power. The H M 5118165 offers
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OCR Scan
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PDF
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HM5118165
1048576-word
16-bit
ADE-203-636B
576-word
16-bit.
42-pin
50-pin
ns/60
ns/70
5118165TT-6
M5118165
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Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T 5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT-60/70
5118165BJ/BFT
5118165BJ/
DR16160695
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5116165
Abstract: 5118165 EDO DRAM
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C
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PDF
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16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-70)
5116165BSJ-50)
5116165BSJ-60)
165BSJ-50/-60/-70
5116165
5118165
EDO DRAM
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SOJ42
Abstract: No abstract text available
Text: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information * SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)
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32-Bit
321005S/GS-50/-60
321005S/GS-50/-60
SOJ42
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor 5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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Untitled
Abstract: No abstract text available
Text: HB56H232 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM 5118165AJ sealed in SOJ package. The HB56H232 offers Extended Data Out (EDO) Page Mode as a high speed access time.
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HB56H232
152-word
32-bit
16-Mbit
HM5118165AJ)
72-pin
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TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
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TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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