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    5118165B Price and Stock

    NPNX NN5118165BJ-50

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    Bristol Electronics NN5118165BJ-50 432
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    Bristol Electronics TC5118165BJ-60 162
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    Component Electronics, Inc TC5118165BJ-60 2
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    NPNX NN5118165BJ-60

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    Bristol Electronics NN5118165BJ-60 14
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    Siemens HYB5118165BSJ50

    1M X 16-BIT DYNAMIC RAM 1K REFRESH (HYPER PAGE MODE-EDO) EDO DRAM, 1MX16, 50ns, CMOS, PDSO42
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    ComSIT USA HYB5118165BSJ50 18
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    5118165B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SPT0305

    Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
    Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


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    16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SPT0305 BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ PDF

    HYB3116165BSJ

    Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


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    16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BSJ/ HYB5116165 HYB3116165 HYB5118165 HYB3118165 HYB3116165BSJ HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Information • 2 097 152 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version)


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    32-Bit 322005S/GS-50/-60 L-SIM-72-10 GLS58332 PDF

    5116 ram

    Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


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    16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70 PDF

    Q67100-Q2062

    Abstract: No abstract text available
    Text: 1M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Information • SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)


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    32-Bit 321005S/GS-50/-60 L-SIM-72-10 GLS05833 Q67100-Q2062 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )


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    16-Bit Y//77777/ PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which


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    THM3210B5BS/BSG-60/70 3210B5BS/BSG 5118165BJ 3210B THM3210B5BS/BSG-60/70 M3210B5BS/BSG DM04020695 PDF

    5116 RAM

    Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
    Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)


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    16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yà 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60 PDF

    SIEMENS BST

    Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


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    16-Bit HYB5118165 HYB3118165 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 SIEMENS BST SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L PDF

    SIEMENS BST 68

    Abstract: BST50 3118165 SIEMENS BST Q
    Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


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    16-Bit 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOPII-50/44-1 GPX05958 SIEMENS BST 68 BST50 3118165 SIEMENS BST Q PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time


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    16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-7EDO E35hQ5 165BSJ-50/-60/-70 16-EDO PDF

    Untitled

    Abstract: No abstract text available
    Text: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The 5118165B offers Extended


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    HM5118165B 1048576-word 16-bit ADE-203-000 576-word 16-bit. ns/70 ns/80 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T 5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


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    TC5118165BJ/BFT-60/70 5118165BJ/BFT 5118165BJ/ DR16160695 PDF

    5116165

    Abstract: 5118165 EDO DRAM
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C


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    16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-70) 5116165BSJ-50) 5116165BSJ-60) 165BSJ-50/-60/-70 5116165 5118165 EDO DRAM PDF

    MSM5118165B

    Abstract: TSOP 86 Package
    Text: O K I Semiconductor 5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5118165B achieves high integration, high-speed operation, and low-power


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    E2G0055-17-41 MSM5118165B_ 576-Word 16-Bit TheMSM5118165B MSM5118165B 42-pin TSOP 86 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


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    P-SOJ-26/20-5 PDF

    thv8

    Abstract: HYB39S16800T 16m x 4 hyb
    Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15


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    L-SIM-72-12 324020S/GS 324025S/GS L-SIM-72-15 328020S/GS 328025S/GS 364020S/GS L-SIM-72-13 364035S/GS thv8 HYB39S16800T 16m x 4 hyb PDF

    faa11

    Abstract: 5118165 d lt 7210
    Text: SIEMENS 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Inform ation • 1 048 576 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access tim e


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    32-Bit 321005S/GS-50/-60 321005S/GS-50/-60 i-f1111111111111 faa11 5118165 d lt 7210 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access time


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    32-Bit 322005S/GS-50/-60 322005S/GS-50/-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


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    1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50 PDF

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


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    P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube PDF

    Q67100-Q2066

    Abstract: edo simm 20.32 mm
    Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)


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    32-Bit 322005S/GS-50/-60 L-SIM-72-10 GLS58332 Q67100-Q2066 edo simm 20.32 mm PDF

    Z1132

    Abstract: No abstract text available
    Text: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118165B offers Extended


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    HM5118165B 1048576-word 16-bit ADE-203-000 576-word 16-bit. ns/70 ns/80 Z1132 PDF

    5118165

    Abstract: No abstract text available
    Text: SIEMENS 1M x 64-Bit Dynamic RAM EDO Module HYM 641005GS-50/-60 168 pin buffered DIMM module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 1M x 64 organisation • Extended Data Out EDO • Performance:


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    64-Bit 641005GS-50/-60 L-DIM-168-19 DM168-19 5118165 PDF