EN4233
Abstract: 2SJ259
Text: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
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EN4233
2SJ259
2SJ259]
2SJ259-applied
EN4233
2SJ259
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2SJ257
Abstract: No abstract text available
Text: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
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EN4242
2SJ257
2SJ257]
2SJ257-applied
2SJ257
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2SK2012
Abstract: No abstract text available
Text: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]
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EN4321A
2SK2012
2SK2012]
O-220ML
2SK2012
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2SK2045
Abstract: No abstract text available
Text: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.
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ENN4287A
2SK2045
140ns)
2078B
2SK2045]
O-220FI
2SK2045
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2SK2044
Abstract: No abstract text available
Text: Ordering number:ENN4286A N-Channel Silicon MOSFET 2SK2044 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=120ns . · Micaless package facilitating easy mounting.
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ENN4286A
2SK2044
120ns)
2078B
2SK2044]
O-220FI
2SK2044
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2SJ272
Abstract: No abstract text available
Text: Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ272]
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EN4238
2SJ272
2SJ272]
O-220ML
2SJ272
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Untitled
Abstract: No abstract text available
Text: s, AP A d va n c e d P e rfo rm a n c e Series V DSs = 2 5 0 V 206 3 N Channel Power M O SFET £4321 F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK2012
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Untitled
Abstract: No abstract text available
Text: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.
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2SK2044
120ns)
O-220FI
51193TH
X-9260
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Untitled
Abstract: No abstract text available
Text: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.
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2SK1891
2SK1891-applied
10//S,
51193TH
AX-8377
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Untitled
Abstract: No abstract text available
Text: 2093 2090 LP L o w D rive S eries VDSs = 3 0 V P Channel Power M OSFET 1'42J2 F e a tu r e s • Low O N re s istan c e . • V ery h igh-speed sw itch in g . • L ow -voltage driv e. • S u rface m o u n t ty p e device m a k in g th e follow ing possible.
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2SJ257
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d3s diode
Abstract: No abstract text available
Text: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1906
apacit63
51193TH
X-8377
Na4225-l/3
d3s diode
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AX-9832
Abstract: No abstract text available
Text: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss
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2SK1921
51193TH
AX-9832
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2SJ257
Abstract: No abstract text available
Text: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.
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2SJ257
2SJ257-applied
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2SK2010
Abstract: No abstract text available
Text: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C
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2SK2010
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2SK1898
Abstract: 2824I
Text: 2SK1898 2093 LD L o w D riv e S e rie s V DSs = 6 0 V 2090 N Channel Power MOSFET 4209 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in th e num ber of m anufacturing processes for 2SK1898-applied equipm ent.
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2SK1898
2SK1898-applied
10//S,
13c154
2SK1898
2824I
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2052B
Abstract: en43-1 EN4310 2SK192
Text: Ordering num ber:E N 4310 2SK192Í No.4310 N-Channel MOS Silicon FET SA ÍYO i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings a tT a = 25°C Drain-to-Source Voltage
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EN4310
2SK192Ã
2052B
en43-1
EN4310
2SK192
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sanyo wx series
Abstract: sanyo wx 2SJ277
Text: 2SJ277 2093 2090 LD L o w D rive Series V Ds s = 1 0 0 V P Channel Power MOSFET 4241 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ277-applied equipment.
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2SJ277
2SJ277-applied
10/ws,
c-10V
sanyo wx series
sanyo wx
2SJ277
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V222A
Abstract: No abstract text available
Text: 2SK1907 2093 2090 LD Low D rive S e rie s VdsS= 100V N Channel Power MOSFET i|M226 F e a tu re s - Low ON resistance. - Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1907-applied equipment.
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2SK1907
2SK1907-applied
V222A
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2SJ275
Abstract: No abstract text available
Text: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.
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EN4240
2SJ275
2SJ275-applied
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100AVS
Abstract: No abstract text available
Text: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.
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2SK1900
2SK1900-applied
V0D-30V
100AVS
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.
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EN4321A
2SK2012
2SK2012]
O-220ML
Curren80
0G21b0b
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.
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EN4287A
2SK2045
140ns)
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2SK1909
Abstract: i0c0
Text: 2SK1909 2093 2090 LD L o w D rive S eries V DSS= 1 0 0 V N Channel Power MOSFET 4227 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1909-applied equipm ent.
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2SK1909
2SK1909-applied
10//s,
Temperatur10V
2SK1909
i0c0
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2SK1889
Abstract: No abstract text available
Text: 2SK1889 2093 2090 LD L o w D rive S eries V DSs = 30V N Channel Power MOSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1889-applied equipm ent.
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2SK1889
2SK1889-applied
7cH707fci
2SK1889
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