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    512 X 4 PROM Search Results

    512 X 4 PROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27S19AJC Rochester Electronics LLC AM27S19 - 256-Bit Bipolar PROM Visit Rochester Electronics LLC Buy
    27S19APC Rochester Electronics LLC AM27S19 - 256-Bit Bipolar PROM Visit Rochester Electronics LLC Buy
    27S85ALM/B Rochester Electronics LLC AM27S85 - 4kx4 Bipolar PROM Visit Rochester Electronics LLC Buy
    27S19ADM/B Rochester Electronics LLC AM27S19 - 256-Bit Bipolar PROM Visit Rochester Electronics LLC Buy
    27S29APC Rochester Electronics 27S29A - 4K-Bit (512x8) Bipolar PROM Visit Rochester Electronics Buy

    512 X 4 PROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) - 7.5ns 7.5ns - Clock Cycle Time (tCK2.5) - 6ns 6ns 7.5ns


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    DIN 13715

    Abstract: 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP
    Text: Ultra-Low Power SRAMs Density Mb Organization Voltage Range Speed (ns) Features Package N08L6182A Part Number 8 512 Kb x 16 1.65 - 2.2 70 Dual CE 48-BGA N08L63W2A 8 512 Kb x 16 2.3 - 3.6 70 Dual CE 48-BGA N04L63W2A 4 256 Kb x 16 2.3 - 3.6 55 Dual CE 44-TSOP2, 48-BGA


    Original     		PDF N08L6182A 48-BGA N08L63W2A N04L63W2A 44-TSOP2, N04L63W1A DIN 13715 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SA HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 DDR500 DDR400 DDR333 Clock Cycle Time (tCK2.5) 4.5ns 6ns 6ns Clock Cycle Time (tCK3) 4.5ns 5ns - Clock Cycle Time (tCK4)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 250MHz

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SB*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 75 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2.5) 6ns 6ns 7.5ns Clock Cycle Time (tCK3) 5ns - - 200 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 DDR266 200MHz cycles/64

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SA HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 DDR500 DDR400 DDR333 Clock Cycle Time (tCK2.5) 5ns 5ns 6ns Clock Cycle Time (tCK3) 4ns 5ns - 250 MHz 200 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 250MHz cycles/64

    v59c1512

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 Q HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    V58C2512

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    v58c2512

    Abstract: V58C251 V58C25
    Text: V58C2512 804/404/164 SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 75 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2.5) 6ns 6ns 7.5ns Clock Cycle Time (tCK3) 5ns - - 200 MHz 166 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 DDR266 200MHz cycles/64 V58C251 V58C25

    V59C1512

    Abstract: RD 24 105 RP
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 RD 24 105 RP

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 75 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2.5) 6ns 6ns 7.5ns Clock Cycle Time (tCK3) 5ns - - 200 MHz 166 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 DDR266 200MHz

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 75 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2.5) 6ns 6ns 7.5ns Clock Cycle Time (tCK3) 5ns - - 200 MHz 166 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 DDR266 200MHz cycles/64

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SA*I HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 200MHz

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SA HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz


    Original     		PDF V58C2512 16Mbit 32Mbit DDR400 DDR333 200MHz

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QA*I HIGH PERFORMANCE 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) PRELIMINARY 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    A01 monolithic amplifier

    Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild
    Text: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec


    OCR Scan     		PDF CCD412A CCD412A A01 monolithic amplifier A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier Loral linear image sensor transparent substrate Contact image sensor fairchild

    DM74S571

    Abstract: DM74S571N DM74S571V J16A N16A programming TiW PROMs DM74S571J
    Text: DM74S571 S3 National ÆÆ Semiconductor DM74S571 512 x 4 2048-Bit TTL PROM General Description Features This S chottky m em ory is organized in the popular 512 w ords by 4 bits configuration. A m em ory enable input is pro­ vided to control th e output states. W hen the device is en­


    OCR Scan     		PDF DM74S571 2048-Bit DM74S571 DM74S571N DM74S571V J16A N16A programming TiW PROMs DM74S571J

    Untitled

    Abstract: No abstract text available
    Text: H A RR IS S E H I C O N D S E C T O R 4bE ]> • 4 3 G 2 2 7 1 DD3=]237 D ■ HAS HM-6642 ÊE X - H îq - I^ - Z S 512 X 8 CMOS PROM January 1992 Features Description • Low Power Standby and Operating Power The HM-6642 is a 512 x 8 CMOS NiCr fusible link


    OCR Scan     		PDF HM-6642 HM-6642 100nA 120/200ns T-46-l3