23A512-I
Abstract: 23A512 23LC512-I 23LC512
Text: 23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Number VCC Range Dual I/O SDI Quad I/O (SQI) Max. Clock Frequency 23A512 1.7-2.2V Yes Yes 20 MHz SN, ST, P 23LC512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Packages Features:
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23A512/23LC512
512Kbit
23A512
23LC512
32-byte
DS25155A-page
23A512-I
23LC512-I
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Untitled
Abstract: No abstract text available
Text: 8 Bit PLCC EPROMs 512Kbit and smaller UniROM User's Manual 84
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512Kbit
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A25L05PT
Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date
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A25L20P/A25L10P/A25L05P
512Kbit,
85MHz
512Kbit
203mm
A25L05PT
A25L05PU
25L05P
A25L05P
A25L10P
A25L20P
25L10P
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LH28F800BVE-BTL90
Abstract: LHF80V11
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVE-BTL90 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V11) Issue Date: September 20, 1999 sharp LHF80V11 ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F800BVE-BTL90
512Kbit
LHF80V11)
LHF80V11
LH28F800BVE-BTL90
LHF80V11
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LH28F800BVHE-BV85
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F800BVHE-BV85 Flash Memory 8M 1M x 8 / 512Kbit × 16 (Model No.: LHF80V37) Spec No.: EL109096A Issue Date: September 27, 1999 sharp LHF80V37 ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F800BVHE-BV85
512Kbit
LHF80V37)
EL109096A
LHF80V37
LH28F800BVHE-BV85
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FM24C512
Abstract: FM24C512-G FM24V05
Text: FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM24C512
512Kb
512Kbit
FM24C512
512-kilobit
FM24C512,
FM24C512-G
A60003G1
FM24V05
FM24C512-G
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6755w
Abstract: No abstract text available
Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
6755w
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M27G512
Abstract: 27G512
Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga nized into 64K words with 8 bits per word. Any byte can be
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FM27C512-L
288-Bit
FM27C512
512Kbit,
256Kb
M27G512
27G512
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Untitled
Abstract: No abstract text available
Text: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the
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48F512
48F512is
512Kbit
s48F512
MD400062/A
48F512
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27C512N
Abstract: No abstract text available
Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
27C512
256Kb
27C512N
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162V 200/183/166 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 V54C316162V -5 -55 -6 Unit 200 183 166 MHz Latency 3 3 3 clocks Cycle Time tCK 5 5.5 6 ns Access Time (tAC) 5 5.3 5.5 ns Clock Frequency (tCK)
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V54C316162V
512Kbit
V54C316162V
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Untitled
Abstract: No abstract text available
Text: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)
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IS25CD512/010
IS25LD020
512Kbit/1
512Kbit
IS25CD512:
IS25CD010:
IS25LD020:
512Kb
32KByte
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CAT71C256L-85
Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
Text: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA
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T-90-30
CAT28F010
12SKx8)
30mA/100
CAT28F512
512KBit
64Kx8)
50mA/500pA
CAT28F512V5
CAT71C256L-85
cat22c12
CAT27HC256
cerdip z PACKAGE
lb2f
64KX16
CAT27C210
4Q91
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Untitled
Abstract: No abstract text available
Text: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage
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M25P32
50MHz
32Mbit
512Kbit)
32Mbit)
2016h)
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ML2250
Abstract: ML22Q54
Text: 1 ML2250 Series PRODUCT INTRODUCTION SHEET January 22, 2004 VOICE SYNTHESIS LSIs WITH 2 CHANNEL MIXING Description ML2250 series are voice synthesizer LSIs with 512kbit to 6MBit internal ROM plus 2-channel mixing playback function. The volume of each channel can be controlled independently. A “phrase control table” in ROM allows preprogramming of individual phrases to form a sentence
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ML2250
512kbit
14-bit
ML22Q54
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V54C316162V
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162V V54C316162V 200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3 5.5
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V54C316162V
512Kbit
V54C316162V
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27C512N
Abstract: No abstract text available
Text: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into
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FM27C512L
FM27C512L
288-Bit
64Kx8)
FM27C512
512Kbit,
256Kb
27C512N
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vdfpn8
Abstract: M25P16 VDFPN8 8x6mm MLP8 package spi flash m25pxx VDFPN8 package MLP8 M25PXX VDFPN M25P application note
Text: M25PXX 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface DATA BRIEF FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 512Kbit to 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical)
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M25PXX
512Kbit
32Mbit
512Kbit)
32Mbit)
40MHz
50MHz
20xxh)
vdfpn8
M25P16 VDFPN8
8x6mm
MLP8 package
spi flash m25pxx
VDFPN8 package
MLP8
M25PXX
VDFPN
M25P application note
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM6375 / M SM 6374 1 MSM6373 I MSM6372 1M bit/512Kbit/256K bit M A SK ROM SPEECH SYNTHESIZER G EN ERA L DESCRIPTION The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech processor circuit in conjunction w ith a built-in M ASK ROM fo r speech data storage. Since it has a built-in 12-bit DA
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MSM6375
MSM6373
MSM6372
it/512Kbit/256K
12-bit
MSM6376
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ice27c512
Abstract: No abstract text available
Text: ICE27C512 512kbit 64KX8 OTP EPROM Description The ICE27C512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 5V power supply in normal read mode operation. Any byte can be accessed in less than 70ns. The ICE27C512 typically consumes 10mA , standby
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ICE27C512
512kbit
64KX8)
ICE27C512
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Untitled
Abstract: No abstract text available
Text: July 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming V oltage + 1 2.7 5V ■ Typical programm ing tim e 50ns T h e F M 2 7 L V 5 1 2 is a low voltage, low-power 512Kbit, 3.3V-only
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FM27LV512L
288-Bit
FM27LV512
512Kbit,
150ns,
512Kb
150ns
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M6378A
Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
Text: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family
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128Kbit
256Kbit
512Kbit
63P74
MSM6376
MSM6295
MSM5205
MSM6585
MSM6586
MSM6587
M6378A
MSM6388
MSM62* ADPCM
MSM63* ADPCM
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V54C316162VC
Abstract: No abstract text available
Text: MOSEL VITELIC V54C316162VC V54C316162VC 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 -5 -55 -6 -7 Unit 200 183 166 143 MHz Latency 3 3 3 3 clocks Cycle Time tCK 5 5.5 6 7 ns Access Time (tAC ) 5 5.3
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V54C316162VC
512Kbit
V54C316162VC
L52-3775
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Untitled
Abstract: No abstract text available
Text: A25L512A Series 512Kbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors Document Title 512Kbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors Revision History History Issue Date 0.0 Initial issue September 11, 2012 0.1 Remove –U grade
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A25L512A
512Kbit
100MHz
A25L512A:
512K-bit
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