HY27UF084
Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand flash 4Gb
52-ULGA
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Untitled
Abstract: No abstract text available
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
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HY27UG
Abstract: hynix nand HY27UG084G2M
Text: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005
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HY27UG
512Mx8bit
256Mx16bit)
hynix nand
HY27UG084G2M
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256Mx16bit
Abstract: W352 hy27uh084g2m
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
256Mx16bit
W352
hy27uh084g2m
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HY27UF084G2B
Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
Text: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
512Mx8bit)
HY27UF084G2B
HY27UF084
hynix nand HY27UF084G2B datasheet
HY27UF(08/16)4G2B Series
hynix nand
hynix nand 4G
hynix nand flash 2gb
HY27UF084G2
hynix nand HY27UF084G2B
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HY27UG084G2M
Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
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HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
HY27UG164G2M
52-ULGA
hynix nand 4G
HY27UG084G2
HY27UG084GDM
HY27UG084G
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR2 SDRam 512Mx8-SOP DDR2 SDRAM MODULE 3D 2D4G08US4283 4Gbit DDR2 SDRam organized as 512Mx8 based on 128Mx8 Pin Assignment Top View SOP 74 (Pitch : 0.65 mm) Features • Organized as 512Mx8bit based on four 1Gbit DDR2 SDRam. Power supply +1.8 ± 0.1V.
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512Mx8-SOP
2D4G08US4283
512Mx8
128Mx8
512Mx8bit
cycles/64ms
MMD208512804SU7
3DFP-0283-REV
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HY27UH084G2M
Abstract: No abstract text available
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
HY27UH084G2M
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HY27UF084
Abstract: hynix nand flash 4Gb 4gb nand flash HY27UF084G2M HY27UF084G2 48TS hy27uf084g2m-t hynix nand spare area
Text: Preliminary HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand flash 4Gb
4gb nand flash
HY27UF084G2
48TS
hy27uf084g2m-t
hynix nand spare area
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HY27UG084G2M
Abstract: HY27UG hynix nand 4G HY27UG164G2M uLGA 52-ULGA
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
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HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
hynix nand 4G
HY27UG164G2M
uLGA
52-ULGA
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HY27UF084
Abstract: hy27uf084g2m hynix nand hynix nand flash Y27UF084G2M 512Mx8 HY27UF084G2 "NAND Flash" marking GG HY27U
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
hynix nand
hynix nand flash
Y27UF084G2M
512Mx8
HY27UF084G2
"NAND Flash"
marking GG
HY27U
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HY27UH084G2M
Abstract: NAND FLASH QDP hynix hy27 "nand flash"
Text: HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004 Preliminary
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
100ns
HY27UH084G2M
NAND FLASH QDP
hynix hy27 "nand flash"
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HY27UF084G2M
Abstract: HY27UF084 HY27UF084g nand flash HYNIX HY27UF084G2M-T Y27UF084G2M HY27UF084G2 hy27uf084g2mt hynix nand flash 4Gb HY27UF084G2M-TP
Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF084G2M
512Mx8bit)
HY27UF084G2M
HY27UF084
HY27UF084g
nand flash HYNIX
HY27UF084G2M-T
Y27UF084G2M
HY27UF084G2
hy27uf084g2mt
hynix nand flash 4Gb
HY27UF084G2M-TP
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3DFN4G08VS1636
512Mx8
384KM
3DFP-0636-REV
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K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M-Y
K9F4G08U0M
K9F4G08U
52-ULGA
52ULGA
K9K8G08U1M
K9F4G08U0M-ICB0
K9F4G08
81h-10h
K9F4G08U0M-YCB
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K9F4G08U0B
Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9K8G08U1B
K9F4G08U0B
K9F4G08B0B
K9XXG08XXB
K9F4G08U0B-PCB0
K9G4G08U0B
Samsung k9f4g08u0b
SAMSUNG 4gb NAND Flash Qualification Report
K9F4G08U0B-I
SAMSUNG NAND Flash Qualification Report
K9G4G08B0B
SAMSUNG 256Mb NAND Flash Qualification Reliability
k9f4g08u0bpcb0
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K9F4G08U0M
Abstract: two-plane program nand
Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.
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K9K8G08U1M
K9F4G08U0M
K9F4G08U0M
two-plane program nand
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Text: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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K9W8G08U1M
K9K4G08U0M
K9W8G16U1M-YCB0
K9K4G08Q0M-PCB0
K9K4G08U0M-PCB0
K9K4G16U0M-PCBess
200mV
SAMSUNG 4gb NAND Flash Qualification Report
Samsung K9W8G08U1M
K9K4G08U0M-YCB0
K9W8G08U1M
K9W8G08U1M-PCB0
May-31
1220AF
K9K4G08U0M
48-pin TSOP
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two-plane program nand
Abstract: No abstract text available
Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L4G81A
250us
4bit/512Byte
two-plane program nand
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NAND Flash
Abstract: F59L4G81A
Text: ESMT F59L4G81A Flash 4 Gbit 512M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L4G81A
350us
NAND Flash
F59L4G81A
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512M x 8 Bit NAND Flash Memory
Abstract: samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08
Text: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9K8G08U1M
K9F4G08U0M
K9XXG08UXM
512M x 8 Bit NAND Flash Memory
samsung 2GB Nand flash
samsung 8Gb nand flash
K9F4G08U0M-PCB0
8bit nand flash
K9F4G08U0M
52ULGA
K9K8G08U1M
K9XXG08UXM-XIB0
K9F4G08
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K9K8G08U0D
Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
Text: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K9F4G08U0D
K9K8G08U0D
K9K8G08U1D
K9WAG08U1D
K9K8G08U0D-SCB0
K9F4G08U0D-SCB0
K9WAG08U1D
K9WAG08U1D-SCB0
K9F4G08U0D-S
K9WAG08U1D-SCB
K9f* 2010
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply
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512Mx64-BGA
FN32G64VB8263
32Gbit
512Mx64,
512Mx8
512Mx64-bit
512Mx8-bit
MMFN64408808B-D
3DFP-0263-REV
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3DFN16G08
Abstract: VS464
Text: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3DFN16G08VS4643
16Gbit
512MGx8
384KM
3DFP-0643-REV
3DFN16G08
VS464
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