Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    512MB SDR SDRAM CHIP Search Results

    512MB SDR SDRAM CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    512MB SDR SDRAM CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    512MB SDR SDRAM CHIP

    Abstract: SDR SDRAM CHIP sdr sdram BA138 4XXXX
    Text: T4S1288-4xxxx 32M X 4 Bits x 4 Banks 512Mb SDR SDRAM IC Tower FEATURES GENERAL DESCRIPTION • • The SiliconTech T4S32M4-4xxxx is a 32M x 4 bits x 4 banks Single Data Rate (SDR) Synchronous Dynamic RAM (SDRAM) IC Tower. The IC Tower consists of two 3.3V CMOS 16M x 4


    Original     		T4S1288-4xxxx 512Mb) T4S32M4-4xxxx 54-pin 400-mil cycles/64ms T4S1288-4xxx1) T4S1288-4xxx2) A0-A12, 512MB SDR SDRAM CHIP SDR SDRAM CHIP sdr sdram BA138 4XXXX PDF

    3120 32M16

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef83ea581f 3120 32M16 PDF

    MT48H32M16LF

    Abstract: 32M16 MT48H16M32
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 54-ball 90-ball IDD2/IDD71 09005aef82ea3742 MT48H32M16LF 32M16 MT48H16M32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef83ea581f PDF

    MT48H32M16LF

    Abstract: 512MB SDR SDRAM CHIP
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 54-ball 90-ball IDD2/IDD71 09005aef82ea3742 MT48H32M16LF 512MB SDR SDRAM CHIP PDF

    H55S5162DFR-60M

    Abstract: 3g mobile MOTHERBOARD CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram
    Text: 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Specification of 512Mb 32Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		512MBit x16I/O 512Mb 32Mx16bit) 512Mbit H55S5162DFR 16bits 200us H55S5162DFR-60M 3g mobile MOTHERBOARD CIRCUIT diagram mobile MOTHERBOARD CIRCUIT diagram PDF

    H55S5162

    Abstract: H55S5162DFR h55s5162dfr60m
    Text: 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Specification of 512Mb 32Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		512MBit x16I/O 512Mb 32Mx16bit) 512Mbit H55S5162DFR 16bits 200us H55S5162 h55s5162dfr60m PDF

    MT48LC32M16A2

    Abstract: mt48lc64m8a2p EN-37 MT48LC128m4a2 MT48LC128M4A2TG MT48LC64M8A2 TN-48-05 PC133 registered reference design
    Text: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks Features Options • Configurations – 128 Meg x 4 32 Meg x 4 x 4 banks – 64 Meg x 8 (16 Meg x 8 x 4 banks)


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 54-pin PC133) PC100- PC133-compliant MT48LC32M16A2 mt48lc64m8a2p EN-37 MT48LC128m4a2 MT48LC128M4A2TG MT48LC64M8A2 TN-48-05 PC133 registered reference design PDF

    MT48LC128M4A2

    Abstract: MT48LC128M4A2TG MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2 REFLOW PC133 registered reference design
    Text: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks Features Options • Configurations – 128 Meg x 4 32 Meg x 4 x 4 banks – 64 Meg x 8 (16 Meg x 8 x 4 banks)


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 54-pin PC133) PC100- PC133-compliant MT48LC128M4A2 MT48LC128M4A2TG MT48LC32M16A2 MT48LC64M8A2 TN-48-05 MT48LC32M16A2 REFLOW PC133 registered reference design PDF

    K4M51323PI-HG75

    Abstract: K4M51323PI-HG60 K4M51323PI K4M51323PI-HG k4m51323 K4M51323PIHG75
    Text: Rev. 1.0, Dec. 2009 K4M51323PI 512Mb I-die Mobile SDR SDRAM 16Mb x32, 90FBGA with Lead-Free & Halogen-Free VDD / VDDQ = 1.8V / 1.8V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4M51323PI 512Mb 90FBGA K4M51323PI-HG75 K4M51323PI-HG60 K4M51323PI-HG60 K4M51323PI K4M51323PI-HG k4m51323 K4M51323PIHG75 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks Features Options Marking • Configurations – 128 Meg x 4 32 Meg x 4 x 4 banks – 64 Meg x 8 (16 Meg x 8 x 4 banks)


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 54-pin PC133) 09005aef809bf8f3 PDF

    MT48LC32M16A2

    Abstract: PC133 registered reference design 512MB
    Text: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks Features Options Marking • Configurations – 128 Meg x 4 32 Meg x 4 x 4 banks – 64 Meg x 8 (16 Meg x 8 x 4 banks)


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 8192-cycle 09005aef809bf8f3 MT48LC32M16A2 PC133 registered reference design 512MB PDF

    MT48LC32M16A2P

    Abstract: MT48LC64M8A2P PC133 registered reference design
    Text: 512Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC128M4A2 – 32 Meg x 4 x 4 banks MT48LC64M8A2 – 16 Meg x 8 x 4 banks MT48LC32M16A2 – 8 Meg x 16 x 4 banks Features Options Marking • Configurations – 128 Meg x 4 32 Meg x 4 x 4 banks – 64 Meg x 8 (16 Meg x 8 x 4 banks)


    Original     		512Mb: MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 PC100- PC133-compliant 8192-cycle 09005aef809bf8f3 MT48LC32M16A2P MT48LC64M8A2P PC133 registered reference design PDF

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH PDF

    DDR RAM 512M

    Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
    Text: Part Number Decoder - 1 Part Number Decoder This document is intended to give customers understanding of the Elpida part numbering system. For detailed line-up about the individual products, please consult Elpida sales representatives. Elpida Memory, Inc. 2002-2006


    Original     		ECT-TS-1942 1200MHz 184-pin 160-pin 232-pin 1066MHz DDR RAM 512M ELPIDA mobile DDR TSOP II elpida Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 PDF

    SMD 5 PIN CODE G7

    Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock


    Original     		512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 SMD 5 PIN CODE G7 smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9 PDF

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball PDF

    SSTL-135

    Abstract: ELPIDA DDR3 ELPIDA mobile DDR ddr2 ram ELPIDA ddr3 so dimm 204 pin FBGA DDR3 x32 elpida 1gb pc2 Elpida Memory tsop ddr2 ram
    Text: Part Number Decoder - 1 Part Number Decoder This document is intended to give customers understanding of the Elpida part numbering system. For detailed line-up about the individual products, please consult Elpida sales representatives. Elpida Memory, Inc. 2002-2009


    Original     		ECT-TS-1984 512Mb x16bit x32bit SSTL-135 ELPIDA DDR3 ELPIDA mobile DDR ddr2 ram ELPIDA ddr3 so dimm 204 pin FBGA DDR3 x32 elpida 1gb pc2 Elpida Memory tsop ddr2 ram PDF

    S72WS512PFFJF9GH

    Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		S72WS-P S72WS512PFFJF9GH BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01 PDF

    VT8233

    Abstract: VT8366 Socket-462 KT266 socket462 Diagram of memory slots on a desktop or notebook computer Athlon Processors AMD Athlon 64 pin diagram athlon pin configuration VT8233 ram
    Text: 9,$ 7HFKQRORJLHV 'HOLYHULQJ 9DOXH 97 .7$WKORQŒ1RUWK%ULGJH  6LQJOH&KLS1RUWK%ULGJH IRU6RFNHW$%DVHG$WKORQŒ&38V ZLWK0+] URQW6LGH%XV IRU'HVNWRS3&6\VWHPV ZLWK$*3[DQG9/LQN SOXV$GYDQFHG &&0HPRU\&RQWUROOHU VXSSRUWLQJ3&3&6'56'5$0 9&0


    Original     		KT266 VT8366 KT266 Socket-462) PC133 PC100 PC2100 PC1600 VT8233 VT8366 Socket-462 socket462 Diagram of memory slots on a desktop or notebook computer Athlon Processors AMD Athlon 64 pin diagram athlon pin configuration VT8233 ram PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF