QFN36-P-0606-0
Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and
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TC32306FTG
TC32306FTG
QFN36-P-0606-0
QFN36-P
FC102
61012
b00111111
AUTOHD
5275S
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LTS 543 seven segment display
Abstract: seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration
Text: TMS320C5x User’s Guide Literature Number: SPRU056D June 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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TMS320C5x
SPRU056D
Index-19
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LTS 543 seven segment display
seven segment display LTS 543
7 segment display LTS 542
LTS 543
lts 543 series pin diagram
lts 542 pin diagram
7 segment display 10 pin LTS 543
7 segment display LTS 543
bose 6201
lts 543 pin configuration
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
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0000000H
samsung electronics ba41
BA175
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06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
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070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
06SEC
BA213
16N10
BA167
BA184
15ET
BA244
BA242
K8F5615ETM
samsung nor flash
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BIOS manual
Abstract: "USB Controller" DMA slave "2 endpoints" atmel 936 microchip pwm dma example 32 pin bios abstract on mini ups system circuit design atmel 936 usb bios chip 8 pin BIOS example delay source code BIOS example source code
Text: BIOS User’s Manual Version 1.1 Cypress Semiconductor 3901 North First Street San Jose, CA 95134 Tel.: 800 858-1810 (toll-free in the U.S.) (408) 943-2600 www.cypress.com Cypress Disclaimer Agreement The information in this document is subject to change without notice and should not be construed as a commitment by Cypress Semiconductor Corporation Incorporated. While
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Untitled
Abstract: No abstract text available
Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting
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TC32306FTG
TC32306FTG
QFN36-P-0606-0
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Untitled
Abstract: No abstract text available
Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting
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TC32306FTG
QFN36-P-0606-0
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Untitled
Abstract: No abstract text available
Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C54
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A0-A23
000000FH
000001FH
000002FH
0000000H
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BA188
Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S5615ETC
256Mb
44FBGA,
no180000h-018FFFFh
0170000h-017FFFFh
0160000h-016FFFFh
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
BA188
BA255
BA242
BA138
BA234
BA205
BA238
BA251
BA188 co
BA213
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BA251
Abstract: 16N10
Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
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160000h-16FFFFh
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140000h-14FFFFh
130000h-13FFFFh
BA251
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BA95
Abstract: 8A0000
Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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TC528257
Abstract: n724
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The
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n724
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TC524258
Abstract: TC524259BJ C69 WML dsf03
Text: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B
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dk qs
Abstract: CLTO20
Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,
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TC524258AZ
Abstract: No abstract text available
Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM
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SQJ28-P-400-1
SQJ32-P-400-1
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Untitled
Abstract: No abstract text available
Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
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tc528257
Abstract: W640 SFC39 DIN 41162
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The
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TC528257J/SZ/FT/TR-70
W640
SFC39
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Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4256 60 PRELIMINARY 80 10 70 ns 80 ns 100 ns 20 ns 25 ns 25 ns 40 ns 50 ns 70 Max. RAS Access Time, tp^c 60 ns Max. CAS Access Time, <tQAC) 15 ns Max. Column Address Access Time, (tAA)
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Toshiba TC528267J
Abstract: TC528267J 1g17s TC528267 0027T11 D271S W1A01 STO511 TC528267FT
Text: TOSHIBA SILICON GATE CMOS TC528267 t a r g e t s p e c 262,144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528267 is a 2M bit CM OS m ultiport m emory equipped w ith a 262,144-w ords by 8-bits dynam ic random access mem ory RAM port and a 512-words by 8-bits static serial access m emory (SA M ) port. The
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1g17s
0027T11
D271S
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STO511
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TC524258B
Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
Text: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)
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Untitled
Abstract: No abstract text available
Text: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed • Low-current PNP inputs Highly reliable, ultra-fast programming Platmum-Silicide • High-current open-collector and three-stat fuses • Fast chip select
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Untitled
Abstract: No abstract text available
Text: CHAPTER 4. 4.1 TENTATIVE PRODUCT SPECIFICATION MN1900 series lineup type # cycle time nsec MN1901 250 20 MN1902 250 20 3k/0 0/4k 66 QFP-84 100 125(100) 40(50) 3k/0 0/4k 66 QFP-84 200(300) 100 MN1902A clock (MHz) ROM (MI) RAM (MX) RAM (MY) Package (words)
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