KM64V1003C-12
Abstract: KM64V1003C-15 KM64V1003C-20
Text: KM64V1003C CMOS SRAM Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet 1. Delete Preliminary 2. Relex DC characteristics
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KM64V1003C
256Kx4
32-SOJ-400
KM64V1003C-12
KM64V1003C-15
KM64V1003C-20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.
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KM641001B
256Kx4
120mA
110mA
100mA
118mA
28-SOJ-400A
004MAX
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KM64V1003C-12
Abstract: KM64V1003C-15 KM64V1003C-20
Text: Preliminary PRELIMINARY PREILMINARY CMOS SRAM KM64V1003C Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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KM64V1003C
256Kx4
KM64V100ut
32-SOJ-400
KM64V1003C-12
KM64V1003C-15
KM64V1003C-20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY K6R1004V1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Preliminary CCPCCCRCELIMINARY Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary
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K6R1004V1C-C
256Kx4
32-SOJ-400
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KM641001B
Abstract: No abstract text available
Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0
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KM641001B/BL
256Kx4
120mA
110mA
100mA
118mA
28-SOJ-400A
004MAX
KM641001B
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K6R1004C1A
Abstract: K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20
Text: PRELIMINARY K6R1004C1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995 Preliminary Rev. 1.0 Release to final Data Sheet.
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K6R1004C1A-C
256Kx4
12/15/17/20ns
200/190/180/170mA
150/145/145/140mA
32-SOJ-400
K6R1004C1A
K6R1004C1A-12
K6R1004C1A-15
K6R1004C1A-20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRELIMINARY K6R1004C1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998
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K6R1004C1C-C
256Kx4
32-SOJ-400
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KM641003C
Abstract: KM641003C-12 KM641003C-15 KM641003C-20
Text: PRELIMINARY PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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KM641003C
256Kx4
32-SOJ-400
KM641003C
KM641003C-12
KM641003C-15
KM641003C-20
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K6R1004C1D
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.
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K6R1004C1D
256Kx4
32-SOJ-400
K6R1004C1D
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KM641003C
Abstract: KM641003C-12 KM641003C-15 KM641003C-20
Text: PRELIMINARY PRELIMINARY KM641003C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998 Preliminary
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KM641003C
256Kx4
32-SOJ-400
KM641003C
KM641003C-12
KM641003C-15
KM641003C-20
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KM641001B
Abstract: No abstract text available
Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0
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KM641001B/BL
256Kx4
120mA
110mA
100mA
118mA
28-SOJ-400A
004MAX
KM641001B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D-C/D-I/D-P CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Initial release with Preliminary. Current modift Draft Data
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K6R1004C1D-C/D-I/D-P
256Kx4
32-SOJ-400
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K6R1004V1D
Abstract: No abstract text available
Text: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.
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K6R1004V1D
64Kx16
100mA
32-SOJ-400
K6R1004V1D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM64V1003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev . No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995
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KM64V1003A
256Kx4
32-SOJ-400
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRELIMINARY K6R1004V1C-C/C-L, K6R1004V1C-I/C-P CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary
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K6R1004V1C-C/C-L,
K6R1004V1C-I/C-P
256Kx4
32-SOJ-400
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K6R1004V1D
Abstract: K6R1016
Text: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.
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K6R1004V1D
64Kx16
100mA
32-SOJ-400
K6R1004V1D
K6R1016
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY K6R1004V1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Revision History Rev . No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 Release to Preliminary Data Sheet.
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K6R1004V1A-C
256Kx4
12/15/17/20ns
32-SOJ-400
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SRAM sheet samsung
Abstract: No abstract text available
Text: PRELIMINARY KM64V1003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev . No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM64V1003A
256Kx4
32-SOJ-400
SRAM sheet samsung
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KM641001A
Abstract: KM641001A-15 KM641001A-20
Text: PRELIMINARY CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995
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KM641001A
256Kx
15/17/20ns
190/180/170mA
28-SOJ-400A
KM641001A
KM641001A-15
KM641001A-20
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KM641003A
Abstract: KM641003A-12 KM641003A-15 KM641003A-20
Text: PRELIMINARY KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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KM641003A
256Kx4
12/15/17/20ns
200/190/180/170mA
150/145/145/140mA
32-SOJ-400
KM641003A
KM641003A-12
KM641003A-15
KM641003A-20
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Untitled
Abstract: No abstract text available
Text: 'F 'f Z - H f niET EC A L C A TE L 45E D • fc>15ñb51 GOOOGlfl T ■ MTEC 1.5 1 CMOS Standard Cell Library MTC-800 Services Features • Silicon-Gate 1.5 Micron CMOS Technology • Fully supported by MADE • Extensive M acrocell Library • ROMs, RAMs and other
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OCR Scan
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MTC-800
MTC-800
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MM5213
Abstract: MM5203 MM5203Q 34852E
Text: National Sem iconductor MM5203 Electrically Programmable 2048 Bit Read O nly Memory PROM R E FE R E N C E T A B L E Code S to ck No. MM5203Q 34852E Sem iconductors MQS-RQM S C O N N E C T IO N D I A G R A M TO P V IEW A3 1 — - 2 4 V u . A2 2 — —
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OCR Scan
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MM5203
MM5203Q
34852E
2048-bit
256-8-bit
512-4-bit
MM5213,
512x4
MM5213
34852E
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MN1510
Abstract: MB2012
Text: KM64V1003A CMOS SRAM 256K x 4 Bitfwith ÔË High-Speed CMOS Static RAM 3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : SmA(Max.) Operating KMS4V1003A -1 2 : 130mA(Max.)
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KM64V1003A
KMS4V1003A
130mA
KM64V1003A
125mA
120mA
KM64V1003AJ
32-SOJ-4QO
MN1510
MB2012
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PDF
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se012
Abstract: CF455 ni 6008 rom 512x4 se022 LC587204A kd 503 transistor SE012 diagram SE603 lopg
Text: Ordering number : EN*6008 CM OS 1C LC587208A, 587206A, 587204A, 587202A ¡S A ftY O i 4-Bit Single-Chip Microcontroller LCD Driver ROM: 2,4,6, or 8 K x 16 bits, RAM: 512 x 4 bits Preliminary Overview The LC587202A through LC587208A are 4-bit CMOS microcontrollers that integrate RO M , R A M , and an
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LC587208A,
87206A,
87204A,
87202A
LC587202A
LC587208A
16-bit
512x4
se012
CF455
ni 6008
rom 512x4
se022
LC587204A
kd 503 transistor
SE012 diagram
SE603
lopg
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