82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
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512x8)
82S141
82S141
500ns
82S141/BKA
mux 8 to 1 timing
8 bit ttl mux
8 INPUT 4 OUTPUT MUX
GDFP2-F24
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PDF
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82S147B
Abstract: F0180 mux 8 to 1 timing
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x8)
82S147B
82S147B
500ns
F0180
mux 8 to 1 timing
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82S147
Abstract: 8 bit ttl mux mux 8 to 1 timing mux 8/3 82S147A 4k prom
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S147 82S147A 4K-bit TTL bipolar PROM 512x8 FEATURES DESCRIPTION • Address access time: 75ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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Original
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82S147
82S147A
512x8)
82S147
82S147A
500ns
8 bit ttl mux
mux 8 to 1 timing
mux 8/3
4k prom
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PDF
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WE VQE 23 F
Abstract: WE VQE 11 E WE VQE 24 E X2804A X2804AM X2804AM-35 X2804AM-45
Text: ü 4K Military X2804AM n 512x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data
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X2804AM
512x8
X2804A
MH-Std-883C
WE VQE 23 F
WE VQE 11 E
WE VQE 24 E
X2804AM-35
X2804AM-45
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PDF
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Untitled
Abstract: No abstract text available
Text: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data
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X2804AM
512x8
X2804A
MilStd-B83C
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PDF
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DM77
Abstract: DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A
Text: DM77SR27/DM87SR27 VWA National éH à Sem iconductor DM77/87SR27 512x8 4k-Bit Registered TTL PROM General Description The DM77/87SR27 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by
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DM77/87SR27
DM77/87SR27
DM77
DM87SR27N
DM87SR27BJ
DM87SR27BN
J22A
N22A
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PDF
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2048 bit 256x8 bipolar prom
Abstract: 82S115 512x8 PROM 82S114 512X8 signetics PROM
Text: s ig n o tic s 2048-BIT BIPOLAR ROM 256x8 PROM 4096-BIT BIPOLAR ROM (512x8 PROM) 825114 825115 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION The 82S114 and 82S115 are Schottky-clamped Read Only Memories, incorporating on-chip data output registers.
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2048-BIT
256x8
4096-BIT
512x8
82S114
82S115
2048 bit 256x8 bipolar prom
512x8 PROM
signetics PROM
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PDF
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SIGNETICS prom
Abstract: No abstract text available
Text: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
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82S147B
82S147B
512x8)
SIGNETICS prom
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PDF
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Untitled
Abstract: No abstract text available
Text: Am27S15 Am27S15 4096-Bit 512x8 Bipolar PROM with Output Data Latches DISTINCTIVE CHARACTERISTICS • • • • On-chip data latches Latched true and complemented output enables for easy word expansion Predetermined OFF outputs on power-up Fast access time — 60 ns commercial and 90 ns military
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OCR Scan
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Am27S15
4096-Bit
512x8)
512-words
MIL-STD-883,
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PDF
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63RA481
Abstract: 53RA481 53RA481A 63RA481A
Text: High Performance 512x8 Registered PROM 5 3 /6 3 R A 4 8 1 5 3 /6 3 R A 4 8 1 A Features/B enefits Description • Versatile synchronous and asynchronous enables The 53/63RA481 and 53/63RA481A are 512x8 Registered PROMs with on-chip “D” type registers, versatile output enable control
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512x8
53/63RA481
53/63RA481A
24-pin
53/63RA481A
63RA481
53RA481
53RA481A
63RA481A
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PDF
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256X16
Abstract: 256X8 512X8 KM93C57 KM93C67 10XXXXX
Text: SAMSUNG ELECTRONICS INC b7E D • 7^ 4 14 2 KM93C57/KM93C67 DGlbfl40 371 SÎ1GK CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250/xA (TTL)
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DGlbfl40
KM93C57/KM93C67
250/JV
KM93C67
KM93C57
KM93C57/67
KM93C57V/KM93C67V
256X16
256X8
512X8
KM93C57
KM93C67
10XXXXX
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PDF
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NB2S147
Abstract: 825147 82S147 82S147A N82S147 N82S147A 512x8 ttl prom
Text: Philips Components-Signetics 82S147/ 82S147A Document No. 8 5 3 -0 1 2 9 ECN No. 86487 Date of Issue N ove m b e r 1 1 ,1 9 8 6 Status P ro du ct S pecification 4K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 8 2S 14 7 and 8 2 S 1 4 7 A are fie ld prog ra m m a ble , w hich m eans th a t
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82S147
82S147A
82S147A
NB2S147
N82S147A
NB2S147
825147
N82S147
N82S147A
512x8 ttl prom
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PDF
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SIGNETICS prom ttl 512
Abstract: 82S115
Text: Signetics 82S115 4K-BitTTL Bipolar PROM 5 1 2 x 8 Military Bipolar Memory Products DESCRIPTION The 8 2 S 1 1 5 is field programmable and in cludes on-chip decoding and 2 chip en able inputs for e ase of memory expansion. It features 3-State outputs for optimization
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82S115
512x8)
SIGNETICS prom ttl 512
82S115
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • TTbHmS KM93C57V/KM93C67V DDlbfiH? 723 ■ PRELIMINARY CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ^ 5 .5 V • Low power consumption
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KM93C57V/KM93C67V
KM93C57
KM93C57V/67V
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PDF
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82S141
Abstract: No abstract text available
Text: Philips Componenfs-Signetics Document No. 8 5 3 -1 0 8 4 ECN No. 91141 Date of Issue O c to b e r 2 7 , 1 9 8 7 Status P ro d u c t S p e c ific a tio n 8 2 S 1 4 / 1 8 S 2 1 4 1 A 4K-bit TTL bipolar PROM M e m o ry P ro d u c ts DESCRIPTION FEATURES T h e 8 2 S 1 4 1 a n d 8 2 S 1 4 1 A a re fie ld
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512x8)
82S141
82S141A
N82S141
N82S141A
750f2,
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PDF
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AM27S29A/BRA
Abstract: No abstract text available
Text: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield
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Am27S29/Am27S29A/Am27S29SA
096-Bit
512x8)
Am27S29
512-words
TC003442
TC003452
KS000010
AM27S29A/BRA
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS EEPROM KM93C57/KM93C67 2K/4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250/JV (TTL) • User selectable memory organization — 256 x 16 o r 512 x 8 for KM93C67
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OCR Scan
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KM93C57/KM93C67
250/JV
KM93C67
KM93C57
KM93C57/67
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM93C57/KM93C67 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 A (TTL) • User selectable memory organization — 256 x 16 or 512 x 8 for KM93C67
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OCR Scan
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KM93C57/KM93C67
KM93C67
KM93C57
KM93C57/67
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PDF
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x2864
Abstract: X2864A x2864b X24LC04D X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI
Text: im PRELIMINARY INFORMATION X24LC04 X24LC04I Commercial Industrial 4K 512x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 ixA Standby Current Typical • Internally Organized as Two Pages
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X24LC04
X24LC04I
512x8
14-Pin
X24LC04,
X24LC04I
x2864
X2864A
x2864b
X24LC04D
X24LC04DI
X24LC04P
X24LC04PI
X24LC04S
X24LC04SI
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PDF
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Untitled
Abstract: No abstract text available
Text: A m 2 7 S 1 5 Am27S15 4096-Bit 512x8 Bipolar PROM with Output Data Latches DISTINCTIVE CHARACTERISTICS • • • • • On-chip data latches Latched true and complemented output enables for easy word expansion Predetermined OFF outputs on power-up Fast access time — 60 ns commercial and 90 ns military
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OCR Scan
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4096-Bit
512x8)
Am27S15
512-words
MIL-STD-883,
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PDF
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Untitled
Abstract: No abstract text available
Text: IfiK PRELIMINARY INFORMATION AU Commercial Industrial X24LC04 X24LC04I r 10vBBi » bi i d h x Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 jliA Standby Current Typical • Internally Organized as Two Pages
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OCR Scan
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X24LC04
X24LC04I
10vBBi(
14-Pin
X24LC04
X24LC04,
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PDF
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S5NS
Abstract: prom 82S147 82S147 82S147A 512 ttl prom
Text: Product •pacification Philips Semiconductors Military Bipolar Memory Products OOS1A7 82S147A 4K-bit TTL bipolar PROM 5 1 2 x 8 DESCRIPTION FEATURES The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the
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OCR Scan
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82S147
82S147A
82S147A
500ns
S5NS
prom 82S147
512 ttl prom
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM93C57V/KM93C67V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced exte n d e d o p erating voltage: 2 . 0 V - 4.5V • Low po w er c onsum ption The KM93C57V/67V is a extended voltage 2K/4K b its
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KM93C57V/KM93C67V
KM93C57V/67V
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PDF
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signetics military data handbook
Abstract: NB2S147 n82S147
Text: Philips Components-Signetics Document No. 853-0129 8 2 S 1 4 7 ECN No. 86487 Date of Issue November 11, 1986 4K-bit TTL bipolar PROM Status Product Specification / 8 2 S 1 4 7 A Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S147 and 82S147A are fieldprogrammable, which means that
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OCR Scan
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82S147
82S147A
Or12x8)
82S147A
600S2,
NB2S147
N82S147A
signetics military data handbook
n82S147
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PDF
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