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    Untitled

    Abstract: No abstract text available
    Text: HB56D25636 Series 262,144-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56D25636B is a 256k x 3 6 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM H M 514256JP sealed in SOJ package and 4 pieces of 256k-bit DRAM (H M 51256C P) sealed in PLCC package. An outline of the H B56D25636B is


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    HB56D25636 144-Word 36-Bit B56D25636B 514256JP) 256k-bit 51256C 72-pin HB56D25636B PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM 514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is


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    HB56D51236 288-Word 36-Bit HB56D51236B HM514256JP) 256k-bit HM51256CP) 72-pin PDF

    514256-10

    Abstract: HM514256 hitachi HM514256
    Text: HM514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ­ ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g


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    HM514256 262144-word 514256P 514256-10 hitachi HM514256 PDF

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    514256

    Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
    Text: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or­ ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying


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    262144-word 262144-w 20-pin 514256P DP-20NA) 514256ZP 514256 HM514256 m514256 M 514256 hitachi HM514256 HM514256-10 PDF

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


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    ADE-40 101490 P22n HM50464P-12 50464 ram PDF

    6264l

    Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
    Text: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N DP-18C 2 2 2 6 (0 1 7 6 )


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    DP-16B DP-18B DP-18C DP-20N DP-20NA DP-22N 300Tt 6789H 256JP 534251JP 6264l 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0 PDF

    27c301

    Abstract: HM6788P-25 HM6788
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.


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