UDFN12
Abstract: 3XXXM
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN12, 2.5x1.2, 0.4P CASE 517AE−01 ISSUE B 12 DATE 21 APR 2009 1 SCALE 4:1 0.15 C PIN ONE REFERENCE 2X ÏÏÏ ÏÏÏ ÏÏ ÎÎ ÏÏ A3 A B D 2X E A1 DETAIL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
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UDFN12,
517AE-01
517AE
UDFN12
3XXXM
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CM162-10
Abstract: notebook diagram 14 pin mobile phone camera pinout CM1621-06DE CM162-1
Text: CM1621 LCD and Camera EMI Filter Array with ESD Protection Features • Six Channels of EMI Filtering with Integrated ESD Protection • Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor C−R−C http://onsemi.com Network • ±15 kV ESD Protection on Each Channel
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CM1621
12-Lead:
UDFN12
517AE
CM1621-06DE
CM1621/D
CM162-10
notebook diagram
14 pin mobile phone camera pinout
CM1621-06DE
CM162-1
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Untitled
Abstract: No abstract text available
Text: NUF6010MU 6 Line EMI Filter with ESD Protection This device is a 6 line EMI filter array for wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6010MU has a cut- off frequency of 250 MHz. This
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NUF6010MU
IEC61000-4-2
NUF6010MU/D
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NUF6001MU
Abstract: NUF6001MUT2G UDFN12
Text: NUF6001MU 6 Line EMI Filter with ESD Protection in UDFN Package This device is a 6 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6001MU has a cut−off frequency of 120 MHz and
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NUF6001MU
NUF6001MU
NUF6001MU/D
NUF6001MUT2G
UDFN12
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NUF6001MU
Abstract: NUF6001MUT2G UDFN12
Text: NUF6001MU 6 Line EMI Filter with ESD Protection in UDFN Package This device is a 6 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6001MU has a cut−off frequency of 120 MHz and
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NUF6001MU
NUF6001MU
NUF6001MU/D
NUF6001MUT2G
UDFN12
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PDF
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Untitled
Abstract: No abstract text available
Text: NUF6010MU 6 Line EMI Filter with ESD Protection This device is a 6 line EMI filter array for wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6010MU has a cut-off frequency of 250 MHz. This UDFN package is specifically designed to enhance EMI filtering for
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NUF6010MU
IEC61000-4-2
NUF6010MU/D
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PDF
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NUF6010MU
Abstract: NUF6010MUT2G UDFN12
Text: NUF6010MU 6 Line EMI Filter with ESD Protection This device is a 6 line EMI filter array for wireless applications. Greater than -20 dB typical attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6010MU has a typical cut-off frequency of 250 MHz. This UDFN package is specifically designed to enhance
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NUF6010MU
NUF6010MU
NUF6010MU/D
NUF6010MUT2G
UDFN12
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NUF6005MU
Abstract: NUF6005MUT2G UDFN12 605MG
Text: NUF6005MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6005MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 10 pF deliver a cutoff frequency of 185 MHz and
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NUF6005MU
NUF6005MU
12-lead
UDFN12
NUF6005MU/D
NUF6005MUT2G
605MG
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PDF
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Untitled
Abstract: No abstract text available
Text: NUF6001MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6001MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 17 pF deliver a cutoff frequency of 120 MHz and
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NUF6001MU
NUF6001MU
UDFN12
NUF6001MU/D
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UDFN16
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN16, 3.5x1.2, 0.4P CASE 517AF−01 ISSUE B 16 DATE 18 MAY 2007 1 SCALE 4:1 0.10 C ÏÏÏ ÏÏÏ PIN ONE REFERENCE 2X 0.10 C ÏÏ ÎÎ ÏÏ A3 A B D 2X E A1 DETAIL A TOP VIEW A3 DETAIL A A 0.10 C 16X SEATING PLANE
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UDFN16,
517AF-01
517AE
UDFN16
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NUF6001MUT2G
Abstract: NUF6001MU UDFN12
Text: NUF6001MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6001MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 17 pF deliver a cutoff frequency of 120 MHz and
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Original
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NUF6001MU
NUF6001MU
12-lead
UDFN12
NUF6001MU/D
NUF6001MUT2G
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PDF
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NUF6010MU
Abstract: NUF6010MUT2G UDFN12
Text: NUF6010MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6010MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 7 pF deliver a cutoff frequency of 250 MHz and
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NUF6010MU
NUF6010MU
12-lead
UDFN12
NUF6010MU/D
NUF6010MUT2G
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PDF
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Untitled
Abstract: No abstract text available
Text: NUF6010MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6010MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 7 pF deliver a cutoff frequency of 250 MHz and
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Original
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NUF6010MU
NUF6010MU
UDFN12
NUF6010MU/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NUF6005MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6005MU is a six−channel C−R−C Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 10 pF deliver a cutoff frequency of 185 MHz and
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Original
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NUF6005MU
NUF6005MU
UDFN12
NUF6005MU/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NUF6010MU 6 Line EMI Filter with ESD Protection in UDFN Package This device is a 6 line EMI filter array for wireless applications. Greater than −20 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6010MU has a cut−off frequency of 250 MHz. This
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Original
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NUF6010MU
NUF6010MU/D
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PDF
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NUF6005MU
Abstract: NUF6005MUT2G UDFN12
Text: NUF6005MU 6 Line EMI Filter with ESD Protection in UDFN Package This device is a 6 line EMI filter array for wireless applications. Greater than -25 dB typical attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6005MU has a typical cut-off frequency
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NUF6005MU
NUF6005MU
NUF6005MU/D
NUF6005MUT2G
UDFN12
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PDF
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STP4119
Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices
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SG388/D
May-2007
STP4119
Full-bridge SG3525 APPLICATION NOTES
sg3525 application note
mc34063 step up with mosfet
mc34063 step down with mosfet
Full-bridge SG3525
sg3525 pwm INVERTER
MJ2955 300 watts amplifier circuit diagram
MT3336
sg3535a
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IGBT 60A spice model
Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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September-2006
IGBT 60A spice model
8 pin ic 3842
motorola an569 thermal
IR 948P
0.65mm pitch BGA socket
bt 2323
DFN 3.3X3.3
HTC Korea
SPICE thyristor model
527 MOSFET TRANSISTOR motorola
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