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    OMRON Electronic Components LLC V-15G5-1C25-K

    SWITCH SNAP ACTION SPDT 15A 250V
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    DigiKey V-15G5-1C25-K Tray 3,191 1
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    Interstate Connecting Components V-15G5-1C25-K 9
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    TDK Electronics B88069X3951C253

    GDT 250V 10KA 3 POLE
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    DigiKey B88069X3951C253 Bulk 1,199 1
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    OMRON Electronic Components LLC V-15-1C25

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    DigiKey V-15-1C25 Box 808 1
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    TME V-15-1C25 1
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    Master Electronics V-15-1C25 692
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    OMRON Electronic Components LLC D3V-11G5-1C25-K

    SWITCH SNAP ACTION SPDT 11A 250V
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    DigiKey D3V-11G5-1C25-K Bulk 661 1
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    OMRON Electronic Components LLC V-155-1C25

    SWITCH SNAP ACTION SPDT 15A 250V
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    DigiKey V-155-1C25 Box 365 1
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    Newark V-155-1C25 Bulk 4 1
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    Master Electronics V-155-1C25 47
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    51C25 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    51C256H Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-10 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-10 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-11 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-12 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    51C256H-15 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-15 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-15 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-15 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    51C256H-20 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-20 Intel High Performance Ripplemode CHMOS Dynamic RAM Original PDF
    51C256H-20 Intel HIGH PERFORMANCE RIPPLEMODETM 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    51C256H-20 Intel HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Scan PDF
    ...

    51C25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ¡ n t I» P ftE U R fl 11 " H ì1 51C256H HIGH PERFORMANCE RIPPLEMODE 256Kx 1 CHMOS DYNAMIC RAM 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 100 120 150 200 Maximum Column Address Accsss Tims (ns 40 50 65 85 Ripplemode Cycle Tims (ns) 50 60 75 95 Maximum Access Tims (ns)


    OCR Scan     		PDF 51C256H 256Kx 51C256H-10t 51C256H-12 51C256H-15 51C256H-20 tRcB170 51C256H 144x1

    Untitled

    Abstract: No abstract text available
    Text: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)


    OCR Scan     		PDF 51C256L 51C256L-15 51C256L-20 51C256L S1C256L

    Untitled

    Abstract: No abstract text available
    Text: P U E L M M A m in t e i C 1P O C Q L LOW POWER 64Kx4 CHMOS DYNAMIC RAM 51C259L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C259L-15 150 51C259L-20 200 0.1 0.1 • TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /iA


    OCR Scan     		PDF 64Kx4 51C259L-12 51C259L-15 51C259L-20 51C259L 51C259L

    Untitled

    Abstract: No abstract text available
    Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation


    OCR Scan     		PDF 51C256HL 51C256HL-15 51C256HL-20

    Untitled

    Abstract: No abstract text available
    Text: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention


    OCR Scan     		PDF 51C256HL 51C256HL-15 51C256HL-20 51C256HL

    Untitled

    Abstract: No abstract text available
    Text: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms


    OCR Scan     		PDF 51C258Lt 51C258L-12 51C258L-15 51C258L 51C258L

    Untitled

    Abstract: No abstract text available
    Text: I ra E U M IIN l lÎW IMl6l 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 120 100 150 200 40 55 65 85 Fast “Usable Speed”


    OCR Scan     		PDF 51C259H 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 51C259H

    S7727

    Abstract: 51C258H 51C258H-10 51C258H-12 51C258H-15 51C258H-20 28012* intel
    Text: P M E Lm m ß M Y in t e i 51 C258Ht HIGH PERFORMANCE RIPPLEMODE 6 4 K x 4 CHMOS DYNAMIC RAM 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 Maximum Access Time ns 100 120 150 200 Maximum Column Address Access Time (ns) 40 50 65 85 Ripplemode Cycle Time (ns)


    OCR Scan     		PDF C258Ht 64Kx4 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 51C258H 536x4 S7727 51C258H-15 51C258H-20 28012* intel

    c1615

    Abstract: c1609 51C259HL 51C259HL-15 51C259HL-20 C1608 C1613 C1614 28003* intel
    Text: in t e i' 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 20 0 Maximum Access Time ns Maximum Column Address Access Time (ns) 150 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Static Column Mode Operation


    OCR Scan     		PDF 51C259HL 51C259HL-15 51C259HL-20 c1615 c1609 51C259HL-20 C1608 C1613 C1614 28003* intel

    c1609

    Abstract: 198S 51C259L 51C259L-12 51C259L-15 51C259L-20 C1608 C1610
    Text: P U E L M M h U Y in y 51C259L LOW POWER 6 4 K x 4 CHMOS DYNAMIC RAM 51C259L-12 51C259L-15 51C259L-20 120 0.1 150 200 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 0.1 • TTL And HC Compatible Low Power Data Retention - standby current, CHMOS — 100


    OCR Scan     		PDF 51C259L 64Kx4 51C259L-12 51C259L-15 51C259L-20 2B0034-003 c1609 198S 51C259L-20 C1608 C1610

    ge ds-38

    Abstract: c1615 ftm 230 IHb si 51C259HL 51C259HL-15 51C259HL-20 C1608 C1609
    Text: ll’M f-P M M Ä l i W ir r t e ! 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 15 0 70 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHM OS Standby Current (mA)


    OCR Scan     		PDF 51C259HL 51C259HL-15 51C259HL-20 ge ds-38 c1615 ftm 230 IHb si 51C259HL-20 C1608 C1609

    51C258L

    Abstract: 51C258L-12 51C258L-15 51C258L-20 28012* intel
    Text: in t e i 51C258Lt LOW PO W ER 6 4 K x 4 C H M O S DYN A M IC RA M 51C258L-12 51C258L-15 51C258L-20 120 0.1 150 200 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low O perating Current — 50 m A (max.) Low Power Data Retention - sta n d b y current, C H M O S — 100 /iA


    OCR Scan     		PDF 51C258Lt 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L-20 28012* intel

    intel 2102 Static RAM

    Abstract: 51C256HL 51C256HL-15 51C256HL-20 TCAM
    Text: in te i' 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation • Low Power Data Retention


    OCR Scan     		PDF 51C256HL 51C256HL-15 51C256HL-20 intel 2102 Static RAM 51C256HL-20 TCAM

    51C256L

    Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
    Text: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)


    OCR Scan     		PDF 51C256L 51C256L-12 51C256L-15 51C256L-20 51C256L-20 28003* intel

    Untitled

    Abstract: No abstract text available
    Text: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA


    OCR Scan     		PDF 51C258LT 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L

    Untitled

    Abstract: No abstract text available
    Text: int ! 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C25Ì6L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 jxA (max.) — Refresh period, RAS-Only — 32 ms (max)


    OCR Scan     		PDF 51C256L 51C256L-15 51C25Ã 6L-20 51C256L

    c1615

    Abstract: c1609 C1617 51C259H 51C259H-10 51C259H-12 51C259H-15 51C259H-20 C1608 CI610
    Text: PREEJ in t é T 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 200 120 150 100 65 85 40 55 Fast “ Usable Speed” Static Column Mode Operation


    OCR Scan     		PDF 51C259H 51C259H-10t 51C259H-12 51C259H-15 51C259H-20 51C259H 536x4 c1615 c1609 C1617 51C259H-10 51C259H-20 C1608 CI610

    28003* intel

    Abstract: 51C256L 51C256L-15 51C256L-20 2800-310
    Text: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention • TTL and HCT Compatible — Standb y current, C HM O S — 100 /¿A (m ax.) — R efresh period, R AS-O nly — 32 m s (m ax)


    OCR Scan     		PDF 51C256L 51C256L-15 51C256L-20 51C256L S1C256L 28003* intel 51C256L-20 2800-310

    c1609

    Abstract: 51C259L 51C259L-12 51C259L-15 51C259L-20 C1608 C1610 28003* intel
    Text: [p^iUSMlDjNlÄiiW i n 51C259L LOW POWER 64K x 4 CHMOS DYNAMIC RAM y 51C259L-12 51C259L-15 51C259L-20 M aximum Access T im e ns 120 150 200 M aximum CHM OS Standby Current (mA) 0.1 0.1 0.1 TTL And HC Compatible Low Power Data Retention - Standby current, CHMOS — 100 /*A


    OCR Scan     		PDF 51C259L 51C259L-12 51C259L-15 51C259L-20 c1609 51C259L-20 C1608 C1610 28003* intel

    B1GP

    Abstract: 51C256H 51C256H-10 51C256H-12 51C256H-15 51C256H-20 28003* intel tpC-170
    Text: i n t ^ r P R E U M M Â Ifflf " f l 1 5 1 C 2 5 6 H HIGH PERFORMANCE RIPPLEMODE 256K x 1 CHMOS DYNAMIC RAM Maximum Accesa Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ne) 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 100 120


    OCR Scan     		PDF 51C256H 51C256H-10f 51C256H-12 51C256H-15 51C256H-20 tpC-170 51C256H 144x1 B1GP 51C256H-10 51C256H-20 28003* intel

    Untitled

    Abstract: No abstract text available
    Text: in té T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM 51C256L-12 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 nA (max.) - Refresh period, RAS-Only — 32 ms (max.) - Data Retention Current — 230 ¡¡A


    OCR Scan     		PDF 51C256L 51C256L-12 51C256L-20 51C256L-15 51C256L

    258H

    Abstract: 536x4
    Text: P E E L M M à M irrtel 51C258Ht HIGH PERFORMANCE RIPPLEMODE 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) Ripplemode Cycle Time (ns) 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 100 120 150 200 40 50 65 85 50


    OCR Scan     		PDF 51C258Ht 51C258H-10 51C258H-12 51C25BH-15 51C258H-20 51C258H 536x4 258H

    c1615

    Abstract: 51C259H 51C259H-15 51C259H-20 C1608 C1609 C1610 C1613 C1614 c1616
    Text: in t e i 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H -1 5 Maximum Access Time ns 5 1 C 2 5 9 H -2 0 150 Maximum Column Address Access Time (ns) 70 • Static Column Mode Operation - Continuous data rate over 12 MHz - Random access from address


    OCR Scan     		PDF 51C259H 51C259H-15 51C259H-20 51C259H c1615 51C259H-20 C1608 C1609 C1610 C1613 C1614 c1616

    20 led VU meter

    Abstract: 51C256HL 51C256HL-15 51C256HL-20 28003* intel
    Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention


    OCR Scan     		PDF 51C256HL 51C256HL-15 51C256HL-20 20 led VU meter 51C256HL-20 28003* intel