Untitled
Abstract: No abstract text available
Text: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ510N25
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: RCX511N25 RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCX511N25
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
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RCX511N25
O-220FM
R1120A
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RCX511N25
Abstract: No abstract text available
Text: RCX511N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
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RCX511N25
O-220FM
R1120A
RCX511N25
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
FDPF51N25
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51A05
Abstract: 51a100
Text: Yuan Dean Scientific CO.,LTD 51A SERIES 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE FEATURES • 16-PIN PACKAGE. • 5EQUALLY-SPACED TAPS. • TTL SCHOTTKY INTERFACED. • TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current
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16-PIN
25-1000nS.
1A-025
1A-050
1A-075
1A-100
1A-150
1A-200
1A-250
1A-300
51A05
51a100
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Untitled
Abstract: No abstract text available
Text: Yuan Dean Scientific CO.,LTD 51A SERIES 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE FEATURES • • • • 16-PIN PACKAGE. 5EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current
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16-PIN
25-1000nS.
1A-025
1A-050
1A-075
1A-100
1A-150
1A-200
1A-250
1A-300
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51a marking
Abstract: FDP51N25 FDPF51N25
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
51a marking
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Untitled
Abstract: No abstract text available
Text: 16 PIN DUAL-IN-LINE TTL ACTIVE DELAY LINE 51A SERIES FEATURES • • • • 16-PIN PACKAGE. 5EQUALLY-SPACED TAPS. TTL SCHOTTKY INTERFACED. TOTAL DELAYS FROM 25-1000nS. ELECTRICAL CHARACTERISTICS IIH Logic”1” Input Current IIL Logic”0” Input Current
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16-PIN
25-1000nS.
25Vdc
1A-025
1A-050
1A-075
1A-100
1A-150
1A-200
1A-250
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51a marking
Abstract: FDP51N25
Text: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)
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FDP51N25
O-220
FDP51N25
51a marking
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP0904GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low On-Resistance R DS ON Fast Switching Characteristics G RoHS-compliant, halogen-free 40V 10mΩ ID 51A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best
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AP0904GH/J-HF-3
O-252
AP0904GH-HF-3
O-252
O-251
AP0904GJ-HF-3)
AP0904
0904GJ
O-251
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pn2222
Abstract: pn2907 NSDU01 2N4125 TN2219 "device marking" BC213 BC214 MPSW01A MPSW51A
Text: VCEO smt (Volts) Min 30 Devices PNP Nf>N M PSW 01A M PSW 51A NSDU01 if t iiliilS l: ; . ' •" . • ••• fr@ l h f j O lc •c (m A) Max mA (MHz) NF Package P D(ftnfe) (<nW) Max Min 1000 50 1000 50 50 TO-226 1000 1000 60 100 50 50 T0-202(55) 1333 Min
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MPSW01A
MPSW51A
NSDU01
T0-202
PN2222
PN3643
PN4141
TN2219
O-237
2N4125
pn2222
pn2907
NSDU01
2N4125
TN2219
"device marking"
BC213
BC214
MPSW01A
MPSW51A
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51A MARKING CODE
Abstract: No abstract text available
Text: StrongIRFET IRFH7545PbF HEXFET Power MOSFET Application • Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFH7545PbF
JESD47Fâ
J-STD-020Dâ
51A MARKING CODE
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HFM101 – HFM106 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30
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HFM101
HFM106
HFM102
HFM103
HFM104
HFM105
HFM107
HFM108
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFS7762PbF
IRFSL7762PbF
JESD47F)
O-262
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HFM101 – HFM108 1A 1A HIGH EFFICIENCY SMA DIODES TYPE Marking HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 HF1 HF2 HF3 HF4 HF5 HF6 HF7 HF8 50 100 200 300 400 600 800 1000 V F V IF (A) VRRM(V) 1.00 1.00 1.00 1.30 1.30
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HFM101
HFM108
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
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1RLZ44
Abstract: 1RLZ44S 12v irlz44 AN-994 IRLZ44 IRLZ44S SMD-220 smd marking AJj a1494 L-179
Text: PD-9.559C International Rectifier IRLZ44 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive V d ss- • FtDS on S p ecifie d a t V g s =4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRLZ44
O-220
1RLZ44
1RLZ44S
12v irlz44
AN-994
IRLZ44S
SMD-220
smd marking AJj
a1494
L-179
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AN-994
Abstract: mj 340
Text: PD - 95483A AUTOMOTIVE MOSFET Features O O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V
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5483A
AN-994.
IRF1010EZ/S/LPbF
O-220AB
AN-994
mj 340
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51A MARKING CODE
Abstract: gs 069 AN-994 IRL3402 IRL3402S
Text: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A S These HEXFET Power MOSFETs were designed
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1693A
IRL3402S
EIA-418.
51A MARKING CODE
gs 069
AN-994
IRL3402
IRL3402S
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AN-994
Abstract: IRL3402 IRL3402S
Text: PD - 91693A IRL3402S HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A S These HEXFET Power MOSFETs were designed
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1693A
IRL3402S
sur22
EIA-418.
AN-994
IRL3402
IRL3402S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ
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IRF1010EZ
O-220AB
IRF1010
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IRL3402
Abstract: No abstract text available
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-179-97 IRL3402 HEXFET TO-220 PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology
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IRL3402
O-220
IRL3402
O-220
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to262 pcb footprint
Abstract: 51a marking irf1010ezpbf MARKING 51A AN-994
Text: PD - 95483A AUTOMOTIVE MOSFET Features O O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 60V
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Original
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5483A
AN-994.
IRF1010EZ/S/LPbF
O-262
to262 pcb footprint
51a marking
irf1010ezpbf
MARKING 51A
AN-994
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