51V16100 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The 51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.	OCR Scan	PDF	MSM51V16100_ 216-Word MSM51V16100 216-w V16100 cycles/64m 7242MQ GD173Ã MSM51V16100
Untitled Abstract: No abstract text available Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 \|3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )	OCR Scan	PDF	51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A
Untitled Abstract: No abstract text available Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V I6100 is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM51V16100_ 216-Word MSM51V16100 MSM51V I6100 cycles/64ms b724240 001035b
MSM51V16100 Abstract: No abstract text available Text: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the 51V16100 is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM51V16100_ 216-Word MSM51V16100 cycles/64ms MSM51V16100 b724240 001fl35b
intel 82c51 Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160	OCR Scan	PDF	51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
MSM51V16100 Abstract: 2M2H Text: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM51V16100_ 216-Word MSM51V16100 MSM51VI6100 cycles/64ms 72M2MD 0D173Ã MSM51V16100 2M2H
MSM51V16100 Abstract: No abstract text available Text: O K I Semiconductor 51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 16100 is a new generation d y n am ic o rgan ized as 16,777,216-w o rd x 1-bit. The technology used to fabricate the M S M 51V I6100 is OKI's C M O S silicon g ate process technology.	OCR Scan	PDF	MSIWI51VI6100_ 216-Word MSM51V16100 MSM51VI6100 cycles/64ms MSM51V16100
DU9 308 Abstract: 32-PIN MSM5117900-70 MSM5117900-80 Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80