LH531000B
Abstract: LH531000BN-S LH531000B-S
Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)
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PDF
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LH531000B-S
LH531000B-S
28-pin,
450-mil
28-PIN
P028-P-0450)
28SOP
LH531000B
LH531000B
LH531000BN-S
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LH531000B
Abstract: LH531000BN-S LH531000B-S
Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.
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Original
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PDF
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LH531000B-S
LH531000B-S
28-PIN
28-pin,
450-mil
A8-P-0450)
28SOP
LH531000B
LH531000B
LH531000BN-S
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mrom
Abstract: LH531000B
Text: 531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)
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Original
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PDF
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LH531000B
LH531000B
28-PIN
28-pin,
600-mil
450-mil
28SOP
mrom
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LH531000B
Abstract: No abstract text available
Text: 531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)
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Original
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PDF
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LH531000B
LH531000B
28-PIN
28-pin,
600-mil
450-mil
28SOP
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531030
Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Text: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C
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OCR Scan
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128Kx8
531020B
531000B
531030B
531021B
1001B
531031B
532021B
532001B
532031B
531030
MSM27C1622BZ
02CM
27C131
27c822
27c832
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02CM
Abstract: No abstract text available
Text: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V
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531020B
531000B
531021B
531001B
531031B
532021B
532001B
532031B
532020B
532000B
02CM
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sharp lh53
Abstract: sharp lh53 1M
Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.
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OCR Scan
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PDF
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LH531000B
28-pin,
600-m
450-m
44-pin
I-------15
600-mil
DIP28-P-600)
sharp lh53
sharp lh53 1M
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Untitled
Abstract: No abstract text available
Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)
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OCR Scan
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PDF
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LH531000B-S
28-pin,
450-mil
OP028-P-0450)
LH531000BN-S
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531000B
Abstract: 531000
Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:
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OCR Scan
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PDF
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28-pin,
600-mil
450-mil
LH531000B
28-PIN
450-rnil
LH531000B
531000B
531000
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Untitled
Abstract: No abstract text available
Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:
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OCR Scan
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PDF
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LH531000B-S
28-pin,
450-mil
28-PIN
I000B
OP028-P-0450)
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lh5359
Abstract: e5bx
Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.
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OCR Scan
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PDF
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LH-532KXX
LH532100BD/BN/BT/BS/BSR/BU
532048D
53V2P00A
532600D
532000B
532000BD
LH-532C
LH-5326XX
lh5359
e5bx
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sharp mask rom
Abstract: No abstract text available
Text: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:
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OCR Scan
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PDF
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LH531000B
28-PIN
28-pin,
600-mil
450-mil
LH531000B
sharp mask rom
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sharp mask rom 44-pin
Abstract: 1417D lh53
Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)
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OCR Scan
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PDF
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28-pin,
600-mil
450-mil
44-pin,
14x14
44-PIN
LH531000B
28-PIN
sharp mask rom 44-pin
1417D
lh53
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Untitled
Abstract: No abstract text available
Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.
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OCR Scan
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PDF
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LH531000B-S
28-pin,
450-mil
LH531000B-S
28-PIN
OP028-P-0450)
|
|
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Untitled
Abstract: No abstract text available
Text: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)
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OCR Scan
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PDF
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LH531000B-S
28-pin,
450-mil
LH531000B-S
28-PIN
OP028-P-0450)
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