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    5362000B Search Results

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    Samsung Semiconductor KMM5362000BG-7

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    Bristol Electronics KMM5362000BG-7 4
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    5362000B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I 5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns 5362000B-8 . 80ns


    OCR Scan     		71b4142 0Q151b4 KMM5362000B/BG 110ns 5362000B-7 130ns KMM5362000B-8 150ns KMM5362000B-6 cycles/16ms PDF

    Untitled

    Abstract: No abstract text available
    Text: U,'.V'w i f 5362000B 8MByte 2M X 36 CMOS DRAM Module General Description Features The SM 5362000B is a high perform ance, 8 -megabyte dynam ic RAM m odule organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line mem ory module (SIMM) package.


    OCR Scan     		SM5362000B 5362000B 72-pin, 60/70/80ns 60/70/80ns) PDF

    KMM5362000B

    Abstract: EL354 kmm5362000b-8 KMM5362000B7
    Text: DRAM MODULES 5362000B/BG 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc ÍRC 60ns 15ns 110ns 5362000B-7 70ns 20ns 130ns 5362000B-8 80ns 20ns 150ns 5362000B-6 • • • • • • • The S am sung 5362000B is a 2M b its x 36 D ynam ­


    OCR Scan     		KMM5362000B/BG KMM5362000B-6 KMM5362000B-7 KMM5362000B-8 110ns 130ns 150ns KMM5362000B 20-pi EL354 kmm5362000b-8 KMM5362000B7 PDF