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Untitled Abstract: No abstract text available Text: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain	OCR Scan	PDF	BLV945A MRC106
uhf vhf booster Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module Text: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology	OCR Scan	PDF	DD32512 OM2070B MCD444 hbS3T31 D03E517 uhf vhf booster UCD445 philips if catv amplifier OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
philips resistor 2322 763 Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage	OCR Scan	PDF	BFG97 OT223 BFG31. OT223 philips resistor 2322 763 bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
BAV10 Abstract: BAW62 bu 11 apx Text: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.	OCR Scan	PDF	BAV10 DO-35 BAV10 DO-35 100XL -00mA BAW62 bu 11 apx