diode marking code 540
Abstract: tp5a SDB0540 540 MARKING DIODE
Text: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power
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SDB0540
SDB0540
OD-123
14-SEP-10
KSD-D6B037-000
diode marking code 540
tp5a
540 MARKING DIODE
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smd k77
Abstract: smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750
Text: Diodes SMD Type 0.75 Surface Mount Schottky Barrier Rectifier KAT750 BAT750 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 For Use in DC-DC Converter, PCMCIA, 1 0.55 High Conductance +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Forward Voltage Drop 2 +0.1
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KAT750
BAT750)
OT-23
100mA
1500mA
500mA
1000mA
750mA
250mA
smd k77
smd k79
smd transistor marking k77
K77 transistor
transistor k79
IR 540
smd diode k77
BAT750
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BAT86S
Abstract: BAT86S-TAP BAT86S-TR DO35
Text: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367
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BAT86S
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAT86S-TR
BAT86S-TAP
D-74025
BAT86S
BAT86S-TAP
DO35
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6264
Abstract: SVC383 marking V3
Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.
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ENN6264
SVC383
SVC383
SVC383-applied
SVC383]
6264
marking V3
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BAT81S
Abstract: BAT81S-TAP BAT81S-TR BAT82S BAT83S DO35 BAT83S-TR
Text: BAT81S/82S/83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component
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BAT81S/82S/83S
2002/95/EC
2002/96/EC
TR/10
D-74025
16-Aug-06
BAT81S
BAT81S-TAP
BAT81S-TR
BAT82S
BAT83S
DO35
BAT83S-TR
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Untitled
Abstract: No abstract text available
Text: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance
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BAR63-04
BAR63-06
OT-23
BAR63
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SMD MARKING g5 sot
Abstract: smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305
Text: Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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BAR63-04
BAR63-06
OT-23
BAR63
SMD MARKING g5 sot
smd diode g6
smd diode g5
smd marking rs
SMD MARKING g5
SMD MARKING g4
marking G3
maxim package marking
SMD MARKING g3
6305
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1N4150
Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay
Text: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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1N4150
2002/95/EC
2002/96/EC
TR/10
TAP/10
1N4150-TR
1N4150-TAP
08-Apr-05
1N4150
1N4150-TAP
DO35
1n4150 vishay
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general semiconductor DIODE SOD80
Abstract: melf diode color code
Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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LS4150
1N4150
2002/95/EC
2002/96/EC
GS18/10
GS08/2
LS4150
LS4150-GS18
LS4150-GS08
08-Apr-05
general semiconductor DIODE SOD80
melf diode color code
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BAS85-GS08
Abstract: SOD80 diode Marking Code AA BAS85-GS18 SCHOTTKY DIODE SOD-80 BAS85 BAT85
Text: BAS85 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS85
DO-35
BAT85.
OD-80)
BAS85-GS18
BAS85-GS08
D-74025
18-Nov-03
BAS85-GS08
SOD80 diode Marking Code AA
SCHOTTKY DIODE SOD-80
BAS85
BAT85
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R-HF RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.
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CDBQR0230R-HF
MIL-STD-750
Paramet13
QR/0402
QW-G1097
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0130R-HF RoHS Device Io = 100 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.
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CDBQR0130R-HF
MIL-STD-750
Paramet13
QR/0402
QW-G1099
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R RoHS Device Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.
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CDBER0230R
MIL-STD-750
ER/0503
QW-A1100
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SC82
Abstract: No abstract text available
Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW
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1SS383T1
SC-82
1SS383T1
SC-82
3000/Tape
1SS383T1/D
SC82
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R-HF RoHS Device Io = 200 mA V R = 30 Volts Features 0503(1308) Halogen free. 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.
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CDBER0230R-HF
MIL-STD-750
ER/0503
QW-G1056
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Untitled
Abstract: No abstract text available
Text: LL4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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LL4150
2002/95/EC
2002/96/EC
GS18/10
GS08/2
LL4150
LL4150-GS18
LL4150-GS08
08-Apr-05
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BAS286
Abstract: BAS286-GS08
Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009
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BAS286
2002/95/EC
2002/96/EC
GS18/10
GS08/2
BAS286-GS18
BAS286-GS08
18-Jul-08
BAS286
BAS286-GS08
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BAS286
Abstract: BAS286-GS08
Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009
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BAS286
2002/95/EC
2002/96/EC
GS18/10
GS08/2
BAS286-GS18
BAS286-GS08
08-Apr-05
BAS286
BAS286-GS08
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Untitled
Abstract: No abstract text available
Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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LS4150
1N4150
2002/95/EC
2002/96/EC
GS18/10
GS08/2
LS4150
LS4150-GS18
LS4150-GS08
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367
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BAT86S
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAT86S
BAT86S-TR
BAT86S-TAP
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction e2 guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
BAT86.
2002/95/EC
2002/96/EC
D-74025
03-Mar-06
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Untitled
Abstract: No abstract text available
Text: LL4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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LL4150
2002/95/EC
2002/96/EC
GS18/10
GS08/2
LL4150
LL4150-GS18
LL4150-GS08
18-Jul-08
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diode ba110
Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V
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BA110
BB141
BB142.
diode ba110
BA142
BA 141 diode
BB142
ba112
BA 30 C
Diode BAY 45
S3 marking DIODE
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marking v3
Abstract: No abstract text available
Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel
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ENN6264
SVC383
SVC383
SVC383-applied
SVC383]
73099GI
B3B37
Q0E3336
marking v3
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