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    540 MARKING DIODE Search Results

    540 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    540 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode marking code 540

    Abstract: tp5a SDB0540 540 MARKING DIODE
    Text: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


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    PDF SDB0540 SDB0540 OD-123 14-SEP-10 KSD-D6B037-000 diode marking code 540 tp5a 540 MARKING DIODE

    smd k77

    Abstract: smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750
    Text: Diodes SMD Type 0.75 Surface Mount Schottky Barrier Rectifier KAT750 BAT750 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 For Use in DC-DC Converter, PCMCIA, 1 0.55 High Conductance +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Forward Voltage Drop 2 +0.1


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    PDF KAT750 BAT750) OT-23 100mA 1500mA 500mA 1000mA 750mA 250mA smd k77 smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750

    BAT86S

    Abstract: BAT86S-TAP BAT86S-TR DO35
    Text: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367


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    PDF BAT86S 2002/95/EC 2002/96/EC TR/10 TAP/10 BAT86S-TR BAT86S-TAP D-74025 BAT86S BAT86S-TAP DO35

    6264

    Abstract: SVC383 marking V3
    Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.


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    PDF ENN6264 SVC383 SVC383 SVC383-applied SVC383] 6264 marking V3

    BAT81S

    Abstract: BAT81S-TAP BAT81S-TR BAT82S BAT83S DO35 BAT83S-TR
    Text: BAT81S/82S/83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


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    PDF BAT81S/82S/83S 2002/95/EC 2002/96/EC TR/10 D-74025 16-Aug-06 BAT81S BAT81S-TAP BAT81S-TR BAT82S BAT83S DO35 BAT83S-TR

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance


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    PDF BAR63-04 BAR63-06 OT-23 BAR63

    SMD MARKING g5 sot

    Abstract: smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305
    Text: Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF BAR63-04 BAR63-06 OT-23 BAR63 SMD MARKING g5 sot smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305

    1N4150

    Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay
    Text: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    PDF 1N4150 2002/95/EC 2002/96/EC TR/10 TAP/10 1N4150-TR 1N4150-TAP 08-Apr-05 1N4150 1N4150-TAP DO35 1n4150 vishay

    general semiconductor DIODE SOD80

    Abstract: melf diode color code
    Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


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    PDF LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 08-Apr-05 general semiconductor DIODE SOD80 melf diode color code

    BAS85-GS08

    Abstract: SOD80 diode Marking Code AA BAS85-GS18 SCHOTTKY DIODE SOD-80 BAS85 BAT85
    Text: BAS85 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


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    PDF BAS85 DO-35 BAT85. OD-80) BAS85-GS18 BAS85-GS08 D-74025 18-Nov-03 BAS85-GS08 SOD80 diode Marking Code AA SCHOTTKY DIODE SOD-80 BAS85 BAT85

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R-HF RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.


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    PDF CDBQR0230R-HF MIL-STD-750 Paramet13 QR/0402 QW-G1097

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0130R-HF RoHS Device Io = 100 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.


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    PDF CDBQR0130R-HF MIL-STD-750 Paramet13 QR/0402 QW-G1099

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R RoHS Device Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.


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    PDF CDBER0230R MIL-STD-750 ER/0503 QW-A1100

    SC82

    Abstract: No abstract text available
    Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW


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    PDF 1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R-HF RoHS Device Io = 200 mA V R = 30 Volts Features 0503(1308) Halogen free. 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.


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    PDF CDBER0230R-HF MIL-STD-750 ER/0503 QW-G1056

    Untitled

    Abstract: No abstract text available
    Text: LL4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    PDF LL4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LL4150 LL4150-GS18 LL4150-GS08 08-Apr-05

    BAS286

    Abstract: BAS286-GS08
    Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009


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    PDF BAS286 2002/95/EC 2002/96/EC GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 18-Jul-08 BAS286 BAS286-GS08

    BAS286

    Abstract: BAS286-GS08
    Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009


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    PDF BAS286 2002/95/EC 2002/96/EC GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 08-Apr-05 BAS286 BAS286-GS08

    Untitled

    Abstract: No abstract text available
    Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


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    PDF LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367


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    PDF BAT86S 2002/95/EC 2002/96/EC TR/10 TAP/10 BAT86S BAT86S-TR BAT86S-TAP 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction e2 guard ring against excessive voltage, such as electrostatic discharges.


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    PDF BAS86 BAT86. 2002/95/EC 2002/96/EC D-74025 03-Mar-06

    Untitled

    Abstract: No abstract text available
    Text: LL4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • • Silicon Epitaxial Planar Diodes Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    PDF LL4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LL4150 LL4150-GS18 LL4150-GS08 18-Jul-08

    diode ba110

    Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
    Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V


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    PDF BA110 BB141 BB142. diode ba110 BA142 BA 141 diode BB142 ba112 BA 30 C Diode BAY 45 S3 marking DIODE

    marking v3

    Abstract: No abstract text available
    Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel


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    PDF ENN6264 SVC383 SVC383 SVC383-applied SVC383] 73099GI B3B37 Q0E3336 marking v3