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    540 MARKING DIODE Search Results

    540 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    540 MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD-3030-000

    Abstract: Schottky Diode 40V 5A SDB0540 KSD303
    Text: SDB0540 치 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB0540 Package Code 540 SOD-123 Outline Dimensions unit : mm 3.4~3.6 1.5~1.7 2.6~2.8 1


    Original     		PDF SDB0540 OD-123 KSD-3030-000 KSD-3030-000 Schottky Diode 40V 5A SDB0540 KSD303

    Untitled

    Abstract: No abstract text available
    Text: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


    Original     		PDF SDB0540 SDB0540 OD-123 14-SEP-10 KSD-D6B037-000

    diode marking code 540

    Abstract: tp5a SDB0540 540 MARKING DIODE
    Text: SDB0540 SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB0540 surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power


    Original     		PDF SDB0540 SDB0540 OD-123 14-SEP-10 KSD-D6B037-000 diode marking code 540 tp5a 540 MARKING DIODE

    SR5100 diode

    Abstract: SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550
    Text: SR520 – SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


    Original     		PDF SR520 SR5100 DO-201AD DO-201AD, MIL-STD-202, SR5100 diode SR560 diode SR5100 SR560 SR530 Diode SR5100 SR540 RS-296-E SR520 SR550

    smd schottky diode 82

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA


    Original     		PDF PBYR645CT accordanSOT428 OT428 smd schottky diode 82

    Untitled

    Abstract: No abstract text available
    Text: SR520 – SR5100 WTE POWER SEMICONDUCTORS Pb 5.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability


    Original     		PDF SR520 SR5100 DO-201AD DO-201AD, MIL-STD-202,

    diode T3 Marking

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA


    Original     		PDF PBYR645CT PBYR635CTD PBYR640CTD PBYR645CTD diode T3 Marking

    smd k77

    Abstract: smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750
    Text: Diodes SMD Type 0.75 Surface Mount Schottky Barrier Rectifier KAT750 BAT750 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 For Use in DC-DC Converter, PCMCIA, 1 0.55 High Conductance +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Forward Voltage Drop 2 +0.1


    Original     		PDF KAT750 BAT750) OT-23 100mA 1500mA 500mA 1000mA 750mA 250mA smd k77 smd k79 smd transistor marking k77 K77 transistor transistor k79 IR 540 smd diode k77 BAT750

    SS54

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C337SC Issued Date : 2003.06.02 Revised Date : Page No. : 1/3 5.0Amp. Surface Mount Schottky Barrier Diodes CSMC520-5100SC Series Features • For surface mounted applications. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications


    Original     		PDF C337SC CSMC520-5100SC MIL-S-19500/228 DO-214AB. MIL-STD-750 UL94V-0 CSMC520-5100SC SS54

    BAT86S

    Abstract: BAT86S-TAP BAT86S-TR DO35
    Text: BAT86S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367


    Original     		PDF BAT86S 2002/95/EC 2002/96/EC TR/10 TAP/10 BAT86S-TR BAT86S-TAP D-74025 BAT86S BAT86S-TAP DO35

    6264

    Abstract: SVC383 marking V3
    Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.


    Original     		PDF ENN6264 SVC383 SVC383 SVC383-applied SVC383] 6264 marking V3

    BAT81S

    Abstract: BAT81S-TAP BAT81S-TR BAT82S BAT83S DO35 BAT83S-TR
    Text: BAT81S/82S/83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


    Original     		PDF BAT81S/82S/83S 2002/95/EC 2002/96/EC TR/10 D-74025 16-Aug-06 BAT81S BAT81S-TAP BAT81S-TR BAT82S BAT83S DO35 BAT83S-TR

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance


    Original     		PDF BAR63-04 BAR63-06 OT-23 BAR63

    SMD MARKING g5 sot

    Abstract: smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305
    Text: Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF BAR63-04 BAR63-06 OT-23 BAR63 SMD MARKING g5 sot smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305

    general semiconductor DIODE SOD80

    Abstract: melf diode color code
    Text: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Electrical data identical with the device e2 1N4150 • Quadro MELF package • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original     		PDF LS4150 1N4150 2002/95/EC 2002/96/EC GS18/10 GS08/2 LS4150 LS4150-GS18 LS4150-GS08 08-Apr-05 general semiconductor DIODE SOD80 melf diode color code

    CDBU0230R-HF

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode CDBU0230R-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) - Low reverse current. -Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) -Extremely thin / leadless package.


    Original     		PDF CDBU0230R-HF 0603/SOD-523F 0603/SOD-523F MIL-STD-750 OD-523F) QW-G1057 CDBU0230R-HF

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode CDBERT0230R I o = 200 mA V R = 30 Volts RoHS Device 0503/SOD-723F Features 0.053 1.35 0.045(1.15) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.034(0.85) 0.026(0.65) -Majority carrier conduction.


    Original     		PDF CDBERT0230R 0503/SOD-723F 0503/SOD-723F MIL-STD-750 Typ13 OD-723F) QW-A1121

    CDBQR0230R-HF

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode CDBQR0230R-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041 1.05 0.037(0.95) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55)


    Original     		PDF CDBQR0230R-HF 0402/SOD-923F /SOD-923F MIL-STD-750 OD-923F) QW-G1097 CDBQR0230R-HF

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBERT0230R RoHS Device Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Low reverse current. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin / leadless package.


    Original     		PDF CDBERT0230R MIL-STD-750 ERT/0503 QW-A1121

    A1117

    Abstract: QW-A1117 A1117 -3.3V SMD Schottky Barrier Diode 0402 smd marking bb
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Low reverse current. Designed for mounting on small surface. 0.026(0.65) 0.022(0.55) Extremely thin / leadless package.


    Original     		PDF CDBQR0230R MIL-STD-750 QR/0402 QW-A1117 CDBQR0230R A1117 QW-A1117 A1117 -3.3V SMD Schottky Barrier Diode 0402 smd marking bb

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R-HF RoHS Device Io = 200 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low reverse current. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.


    Original     		PDF CDBQR0230R-HF MIL-STD-750 QR/0402 QW-G1097

    diode ba110

    Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
    Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V


    OCR Scan     		PDF BA110 BB141 BB142. diode ba110 BA142 BA 141 diode BB142 ba112 BA 30 C Diode BAY 45 S3 marking DIODE

    marking v3

    Abstract: No abstract text available
    Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel


    OCR Scan     		PDF ENN6264 SVC383 SVC383 SVC383-applied SVC383] 73099GI B3B37 Q0E3336 marking v3

    diode marking code 540

    Abstract: DIODE MARKING 541
    Text: Central CMUD4448 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount


    OCR Scan     		PDF CMUD4448 OT-523 100mA CPD63 30-November OT-523 diode marking code 540 DIODE MARKING 541