300b tube
Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
|
Original
|
PDF
|
FBGA-11
24-SOJ-300
-SOJ-300
-TSOP2-300AF
-SOJ-300B
28-SOJ-300
28-SOJ-300A
28-SOJ-400
300b tube
90-FBGA-11
165-FBGA-1517
48-TSOP1-1220F
44-TSOP2-400BF-Lead-Free
SAMSUNG MCP
dram
0X13
SAMSUNG MCP 153
tray bga 64
|
BGA OUTLINE DRAWING
Abstract: mr4a16bmys351
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
|
Original
|
PDF
|
MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
BGA OUTLINE DRAWING
mr4a16bmys351
|
Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
|
csp defects
Abstract: handling damage LGA socket MANUAL PCB Samsung MCP 1mm pitch BGA socket air handling unit CRACK pcb substrate HCFC141B
Text: USER’S MANUAL Chip Scale Package • To make a win-win situation for CSP products supplier and customer, Samsung provides the information of CSP package’s characteristics and manuals to maintain high quality so that the problems of customer process can be minimized or prevented
|
Original
|
PDF
|
150um)
20mils
x20mil
csp defects
handling damage
LGA socket
MANUAL PCB
Samsung MCP
1mm pitch BGA socket
air handling unit
CRACK
pcb substrate
HCFC141B
|
1f1-1717-a19
Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O
|
Original
|
PDF
|
60WMBG
60M/54WBGA-8
10X15
10-8X12-A
LA69-00635A
48TBGA
48-TBGA-10
0-8X16-O
LA69-00267A
ADS11981
1f1-1717-a19
153FBGA
BGA 6x6 tray
FBGA tray kostat
tray bga 6x6
169fbga-12.0x16.0-8x16-0
78BOC-11
78BOC
ePAK BGA 5x5 tray
153FBGA-9
|
aec-q100 package
Abstract: MR4A16BCYS35R
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
AEC-Q100
MR4A16B
216-bit
1-877-347-MRAM
EST00352
aec-q100 package
MR4A16BCYS35R
|
K4S641632C
Abstract: 54TSOP2 54-TSOP2-400AF
Text: K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS
|
Original
|
PDF
|
K4S641632C
16Bit
K4S641632C
54-TSOP2-400AF
54TSOP2
54-TSOP2-400AF
|
Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
|
MR4A16B
Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
MR4A16BCMA35
MR4A16BCYS35
54TSOP2
MR4A16BCYS35R
54-TSOP2
MR4A16BMA35R
MR4A16BC
aecq100
|
speed control of dc motor using scr mini project
Abstract: AUTOMATIC ROOM LIGHT CONTROLLER using ldr LED TV Screen working Theory AUTOMATIC ROOM LIGHT generator using ldr LZ9GG31 mother board lcd tv block diagram automatic WATER LEVEL pump CONTROL using ldr SA1111DEVMOD SA-1110 fpga based fire alarm system block diagram
Text: Intel StrongARM* SA-1110 Microprocessor Development Board User’s Guide June 2000 Hardware Build Phase 5 Order Number: 278278-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual
|
Original
|
PDF
|
SA-1110
SA-1110
speed control of dc motor using scr mini project
AUTOMATIC ROOM LIGHT CONTROLLER using ldr
LED TV Screen working Theory
AUTOMATIC ROOM LIGHT generator using ldr
LZ9GG31
mother board lcd tv block diagram
automatic WATER LEVEL pump CONTROL using ldr
SA1111DEVMOD
fpga based fire alarm system block diagram
|
BGA Package 0.35mm pitch
Abstract: 48BGA MR4A16B
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
BGA Package 0.35mm pitch
48BGA
|
Untitled
Abstract: No abstract text available
Text: EV4A16B 1M x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet - Preliminary Specification Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C)
|
Original
|
PDF
|
EV4A16B
16-bit
EV4A16B
216-bit
wor08
1038Câ
|
MR4A16BCYS35
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
|
Original
|
PDF
|
MR4A16B
MR4A16B
216-bit
MR4A16BCYS35
|
SMC91C96
Abstract: microcontroller interface with gsm module TR28023 LCX16244 keypad 4x4 assembly code 4x4 matrix keypad using ARM SMC C92 scan code keyboard 5x4 schematic GSM Modem USB UDA1341TS
Text: Intel StrongARM* SA-1111 Microprocessor Development Module User’s Guide July 2000 Phase 5 Order No: 278281-004 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual
|
Original
|
PDF
|
SA-1111
SA-1111
SMC91C96
microcontroller interface with gsm module
TR28023
LCX16244
keypad 4x4 assembly code
4x4 matrix keypad using ARM
SMC C92
scan code keyboard 5x4
schematic GSM Modem USB
UDA1341TS
|
|
54TSOP2
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'
|
OCR Scan
|
PDF
|
44TSOP2-400F
50-TSOP2-400F
54-TSOP2-400F
86-TSOP2-400F
54TSOP2
|