Untitled
Abstract: No abstract text available
Text: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM
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550jiW
28-pin,
600-mil
450-mil
LH531000B
28-PIN
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Untitled
Abstract: No abstract text available
Text: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply
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KM68512L/L-L
64Kx8
550jiW
110nW
385mW
KM68512LG/LG-L
32-pin
525mil)
KM68512LT/LT-L
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PJ 0416 1v
Abstract: til 3010 1208FRAM 7S5SG15
Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric
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7S5SG15
1208FRAMÂ
096-Bit
512wx8b
10-Year
-150ns
300ns
250ns
24-Pin)
PJ 0416 1v
til 3010
1208FRAM
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MBm27C512-25-X
Abstract: No abstract text available
Text: 1993 February 1990 Edition 2.0 FUJITSU DATA SHEET MBM27C5 1 2 -25-x CMOS 512 K-BIT UV EPROM CMOS 524,288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C512 is a high speed 524,288 bit static CMOS erasable and electrically
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MBM27C5
-25-x
MBM27C512
DIP-28C-C01
28-pin
32-Pad
MBM27C512.
MBm27C512-25-X
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MS6264A-35NC
Abstract: No abstract text available
Text: MOSEL- VITELIC MS6264A 8K x 8 HIGH SPEED CMOS STATIC RAM Features Description m High-speed- 15/20/25/35 ns The MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. All inputs and three-state
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MS6264A
825mW
550jiW
536-bit
28-pin
MS6264A-15NC
MS6264A-15RC
MS6264A-20NC
MS6264A-35NC
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