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Sensata Circuit Breakers IEGZXF04-40256-50-V CIRCUIT BREAKER MAG-HYDR LEVER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IEGZXF04-40256-50-V	Bulk			3	1 - 10 $108.71333 100 $108.71333 1000 $108.71333 10000 $108.71333	Buy Now
RS	IEGZXF04-40256-50-V	Bulk		7 Weeks	3	1 - 10 $144.48 100 $141.5 1000 $139.29 10000 $139.29	Get Quote
Master Electronics	IEGZXF04-40256-50-V					1 - 10 $96.97 100 $51.97 1000 $46.67 10000 $46.67	Buy Now
Sager	IEGZXF04-40256-50-V				1	1 $166.04 10 $166.04 100 $66.01 1000 $41.42 10000 $41.42	Buy Now
Chenbro Micom Co Ltd PS-M1U2-5650V4H PSU,ZIP,R650W(1+1),RM13204,24/8/8/4 - Bulk (Alt: PS-M1U2-5650V4H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PS-M1U2-5650V4H	Bulk			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chenbro Micom Co Ltd PS-P2G-5650V ZIPPY PS-P2G-5650V 650W POWER SUPPLY 80+ - Bulk (Alt: PS-P2G-5650V)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PS-P2G-5650V	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensata Technologies IEGZXF04-40256-50-V Circuit Breakers Cir Brkr Hyd Mag
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IEGZXF04-40256-50-V					1 $104.4 10 $104.4 100 $104.4 1000 $104.4 10000 $104.4	Get Quote
Phoenix Contact 1987766 (ALTERNATE: PT 2 5/ 6-5 0-V) PCB Terminal Screw 5mm 12AWG 400V 32A 6 Position COMBICON PT Series \| Phoenix Contact 1987766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	1987766 (ALTERNATE: PT 2 5/ 6-5 0-V)	Bulk			100	1 - 10 - 100 $1.53 1000 $1.41 10000 $1.41	Get Quote

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5650V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SMD4532VP Abstract: No abstract text available Text: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / 5650V are low Rdc, higher current	Original	PDF	SMD4532VP SMD5650V SMD5650VL SMTDR0402
SMD4532VP Abstract: No abstract text available Text: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / 5650V are low Rdc, higher current	Original	PDF	SMD4532VP SMD5650V SMD5650VL SMTDR0402
Untitled Abstract: No abstract text available Text: SMD SERIES WIRE WOUND SMD CHIP INDUCTORS Applications : ．Communication infrastructures Including xDSL and mobile base stations. ．Onboard automobile equipment Including car audio and ECU systems. ．Audio-visual equipment including TVs and VCRs. ．Other electronic equipment including HDDs and ODDs.	Original	PDF	5650VL SMD4532VP SMD5650V
Untitled Abstract: No abstract text available Text: Power Inductor–SMT Type SMD SERIES WIRE WOUND SMD CHIP INDUCTORS Applications : 炽Communication infrastructures Including xDSL and mobile base stations. 炽Onboard automobile equipment Including car audio and ECU systems. 炽Audio-visual equipment including TVs and VCRs.	Original	PDF	5650VL SMD4532VP SMD5650V current20
Untitled Abstract: No abstract text available Text: flUALITY T E C H N O L O G I E S CORP S7E ]> O O O ^ Q ij 7 fl3 I ÖTY European “Pro Electron” Registered T y p e s - CNY31 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e	OCR Scan	PDF	CNY31 CNY31
Untitled Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR 37E D M302E71 □ □ 5 7 S ciñ M I HAS Optoelectronic S p ecificatio n s- Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors T h e G E Solid S tate CNY32 is a gallium arsenide, infrared em itting	OCR Scan	PDF	M302E71 CNY32 CNY32 92CS-42662 92CS-429S1
Untitled Abstract: No abstract text available Text: 3875081 G E SOLID STATE 0 1E 19834 D Optoelectronic Specifications _ HA R R I S S Ef l l COND S E C T OR 43G2271 37E DDSTSTh I HAS Photon Coupled Isolator CNY31 Ga As Infrared E m ittin g D iode & NPN Silicon P h oto-D arlington A m plifier T he G E Solid S tate CNY31 is a gallium arsenide, infrared em itting	OCR Scan	PDF	43G2271 CNY31 CNY31 92CS-42662 92CS-428S1
Untitled Abstract: No abstract text available Text: European “Pro Electron” Registered T y p e s _ CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon pho to -D arlin g to n am plifier in a lowcost plastic package with lead spacing com patible to a dual	OCR Scan	PDF	CNY31 CNY31
Untitled Abstract: No abstract text available Text: European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator Ga As Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon p h o to tra n sisto r in a low-cost plastic	OCR Scan	PDF	CNY32 CNY32
H15A1 Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2 Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW	OCR Scan	PDF	100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2
CNY32 Abstract: 5300V Text: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic	OCR Scan	PDF	CNY32 CNY32 5300V
Untitled Abstract: No abstract text available Text: European “Pro Electron" Registered Types CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a silic o n p h o to -D a rlin g to n a m p lifie r in a low c o st p la stic p a c k a g e w ith le a d s p a c in g c o m p a tib le to a d u a l	OCR Scan	PDF	CNY31 CNY31 500VDC)
H15B1 Abstract: H15B2 H15B1-H15B2 SCR 131-6 H11B255 H11D2 H11C1 H13A2 photo interrupter module h13a1 4N38A Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0	OCR Scan	PDF	H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H15B1 H15B2 H15B1-H15B2 SCR 131-6 H11B255 H11C1 H13A2 photo interrupter module h13a1