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    5760M Search Results

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    TAS5760MDDCA Texas Instruments Closed Loop I2S Input Amplifier with Power Limiter and Integrated Headphone, PVDDmax of 26.4V 48-HTSSOP -25 to 85 Visit Texas Instruments Buy
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    5760M Price and Stock

    Abracon Corporation ABM10W-24.5760MHZ-8-D1X-T3

    CRYSTAL 24.5760MHZ 8PF SMD
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    DigiKey ABM10W-24.5760MHZ-8-D1X-T3 Digi-Reel 2,865 1
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    ABM10W-24.5760MHZ-8-D1X-T3 Cut Tape 2,865 1
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    Avnet Abacus ABM10W-24.5760MHZ-8-D1X-T3 Reel 12 Weeks 3,000
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    Abracon Corporation ABM11W-24.5760MHZ-8-B1U-T3

    CRYSTAL 24.5760MHZ 8PF SMD
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    DigiKey ABM11W-24.5760MHZ-8-B1U-T3 Digi-Reel 1,978 1
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    ABM11W-24.5760MHZ-8-B1U-T3 Cut Tape 1,978 1
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    Richardson RFPD ABM11W-24.5760MHZ-8-B1U-T3 1
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    Avnet Abacus ABM11W-24.5760MHZ-8-B1U-T3 Reel 12 Weeks 3,000
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    Seiko Epson Corporation SG-210STF-24.5760ML0

    XTAL OSC XO 24.5760MHZ CMOS SMD
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    DigiKey SG-210STF-24.5760ML0 Cut Tape 1,637 1
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    SG-210STF-24.5760ML0 Digi-Reel 1,637 1
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    Abracon Corporation ABM10W-24.5760MHZ-8-B1U-T3

    CRYSTAL 24.5760MHZ 8PF SMD
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    DigiKey ABM10W-24.5760MHZ-8-B1U-T3 Digi-Reel 1,558 1
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    ABM10W-24.5760MHZ-8-B1U-T3 Cut Tape 1,558 1
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    Avnet Abacus ABM10W-24.5760MHZ-8-B1U-T3 Reel 12 Weeks 3,000
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    Abracon Corporation ABM11W-24.5760MHZ-8-D1X-T3

    CRYSTAL 24.5760MHZ 8PF SMD
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    DigiKey ABM11W-24.5760MHZ-8-D1X-T3 Cut Tape 1,098 1
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    ABM11W-24.5760MHZ-8-D1X-T3 Digi-Reel 1,098 1
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    Newark ABM11W-24.5760MHZ-8-D1X-T3 Reel 3,000
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    5760M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MW500-1401

    Abstract: T160
    Text: Voltage Controlled Oscillators MW500-1401 5160MHz to 5760MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 5160MHz to 5760MHz 3/20 V 6 +/- 1.5 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -82 typ dBc/Hz


    Original     		PDF MW500-1401 5160MHz 5760MHz 33MHZ-50MHZ MW500-1401 T160

    ADF4106 design example

    Abstract: LMX2316TM AD9874
    Text: Fast-Locking, High Sensitivity Tuned-IF Radio Receiver Achieved with a 7-GHz Synthesizer voltage-controlled oscillator VCO . The reference is provided by a temperature-controlled (TCXO), voltage-controlled (VCXO), or oven-controlled (OCXO) crystal oscillator. The PLL synthesizer’s


    Original     		PDF TSSOP-16 CSP-20 ADF4106 design example LMX2316TM AD9874

    RF1196

    Abstract: DS1103
    Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB


    Original     		PDF RF1196SDM RF1196 120dBm 28-pin Module27409-9421 DS110330 RF1196 DS1103

    DEA101910DT-6006B1

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Phase Shifters(Delay Lines) For DCS/PCS Conformity to RoHS Directive DEA Series DEA101910DT-6006B1 SHAPES AND DIMENSIONS 0.52max. 2 0.12±0.07 0.3±0.1 0.35±0.1 0.3±0.1 0.12±0.07 3 1 0.5±0.05 1.0±0.05 4 Terminal functions 1 IN 2 GND


    Original     		PDF DEA101910DT-6006B1 52max. 1910MHz] 15deg. 915MHz 1710MHz 1910MHz 1920MHz DEA101910DT-6006B1

    band 1 duplexer

    Abstract: RF1196 1085MHz umts duplexer LTE duplexer
    Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB


    Original     		PDF RF1196SDM RF1196 120dBm Comp27409-9421 DS110107 band 1 duplexer RF1196 1085MHz umts duplexer LTE duplexer

    LTB-2012-2G4H6-A2

    Abstract: LTB-2012-2G4H6-A3 LTB-1608-2G4H6-B1 LTB-2012-5G5H6-D1 LTB-2012-2G4H6-A1 LTB-2012-2G4H6 LTB2012-2G4H6-A1 LTB-1608-2G4H6-A2 LTB-2520-3G3H6-A1 LTB-2012-2G4H6-A8
    Text: Low Temperature Cofired Ceramics Series CUTTING-EDGE TECHNOLOGIES OF RF SOLUTIONS Band Pass Filter 带通滤波器 • APPLICATION 用途 PHS, WLAN, Bluetooth, Home RF, WiMAX, etc. ■ FIGURE AND DIMENSION 外观尺寸 Figure A Figure B Figure C Figure E Figure F


    Original     		PDF LTB-2012-5G5H6-D1 LTB-2012-5G5H6-B2 LTB-2012-5G5H6-B3 LTB-2012-5G5H6-C5 LTB-2012-5G7H6-A1 LTB-2012-2G4H6-A2 LTB-2012-2G4H6-A3 LTB-1608-2G4H6-B1 LTB-2012-5G5H6-D1 LTB-2012-2G4H6-A1 LTB-2012-2G4H6 LTB2012-2G4H6-A1 LTB-1608-2G4H6-A2 LTB-2520-3G3H6-A1 LTB-2012-2G4H6-A8

    3550FB39C0050

    Abstract: No abstract text available
    Text: Preliminary "High Frequency Ceramic Solutions" 3.55 GHz Multilayer Chip Band Pass Filter + Balun P/N 3550FB39C0050 Page 1 of 2 Detail Specification: 02/23/11 General Specifications Part Number 3550FB39C0050 36 min.@ 680~720MHz Frequency MHz 3300 - 3800 36 min.@1088~1152MHz


    Original     		PDF 3550FB39C0050 3550FB39C0050 3600MHz 3800MHz 720MHz 1152MHz 2160MHz 2700MHz 2880MHz 5040MHz

    Untitled

    Abstract: No abstract text available
    Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. MW500-1401 5160 MHz to 5760 MHz VOLTAGE CONTROLLED OSCILLATORS Specifications Frequency Tuning Voltage Power Output


    Original     		PDF MW500-1401 5760MHZ 33MHZ-50MHZ

    MSC23V46407TD

    Abstract: MSC23V46407TD-50BS16 MSC23V46407TD-60BS16 MSC23V46407TD-70BS16
    Text: This version: Apr.26. 1999 Semiconductor MSC23V46407TD-xxBS16 4,194,304-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23V46407TD-xxBS16 is a 4,194,304-word x 64-bit CMOS dynamic random access memory module which is composed of sixteen 16Mb 4Mx4 DRAMs in TSOP packages mounted with sixteen decoupling capacitors. This


    Original     		PDF MSC23V46407TD-xxBS16 304-Word 64-Bit MSC23V46407TD-xxBS16 168-pin MSC23V46407TD MSC23V46407TD-50BS16 MSC23V46407TD-60BS16 MSC23V46407TD-70BS16

    TDF1950T70

    Abstract: 2625MHz db opera
    Text: Dielectric Filter MODEL TDF1950T70 1 ELECTR CAL CHARACTER ST CS TEM Nom na O mpedance Nom na Cen er req 0 Pass Band SPEC F CAT ONS 50 1950 1920~ 1980 yp max 19 23 26 02 06 17 20 60 49 29 30 31 51 51 49 30 -20 ~ 85 mn nser on Loss a Pass Band R pp e a Pass Band


    Original     		PDF TDF1950T70 1110MHz 1515MHz 1715MHz 2110MHz 2130MHz~ 2170MHz 2625MHz 3840MHz 4545MHz TDF1950T70 db opera

    3500FB39A0050

    Abstract: No abstract text available
    Text: "High Frequency Ceramic Solutions" 3.5 GHz ETSI Band Balun/Filter Combination P/N 3500FB39A0050 Page 1 of 2 Detail Specification: 08/14/07 General Specifications Part Number 3500FB39A0050 35 min.@ 680~720MHz Frequency (MHz) 3400 - 3600 35 min.@1088~1152MHz


    Original     		PDF 3500FB39A0050 720MHz 1152MHz 2160MHz 2880MHz 5040MHz 5760MHz 7920MHz 3500FB39A0050

    Untitled

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Phase Shifters(Delay Lines) For GSM800 Conformity to RoHS Directive DEA Series DEA100915DT-6001B1 SHAPES AND DIMENSIONS 2 0.12±0.07 0.3±0.1 0.12±0.07 3 1 0.5±0.05 0.52max. 0.3±0.1 1.0±0.05 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND


    Original     		PDF GSM800 DEA100915DT-6001B1 52max. 915MHz] 10deg. 1710MHz 1910MHz 1920MHz

    A223D

    Abstract: A225D
    Text: 12/21 Multilayer Low Pass Filters, DEA Series DEA161980LT-1164 FOR W-CDMA SHAPES AND DIMENSIONS RECOMMENDED PCB PATTERN 0.8±0.1 Marking 3 4 1.6±0.15 0.15min. 1 0.8±0.1 2 TERMINAL FUNCTIONS 1 2 3 4 0.6 This width is 50Ω. Micro-strip line for 0.4mm thick


    Original     		PDF DEA161980LT-1164 15min. 1980MHz] 3960MHz] 5940MHz] 1920MHz 266dB 1980MHz 302dB 3840MHz A223D A225D

    smoke alarm using IC NE 555

    Abstract: videophone pt100 amplifier schematic ina103 pt100 msp430 schematic ads1232 weigh scale schematic motor driver full bridge 10A with uc3638 rtd pt100 interface to 8051 3 phase dc converter afe circuit diagram igbt 24v 10A tl494 TEC H bridge that use uc3638 IC
    Text: Industrial Solutions Guide Amplifiers, Data Converters, Digital Signal Processors, Digital Temperature Sensors, Interface, Microcontrollers, Power Controllers, Power Management 1Q 2006 ➔ Inside Intelligent Sensors 4 Motor Control 19 Security 24 Test and Measurement


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 1902.0MHz Part No: MP04388 Model: TA1121A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V


    Original     		PDF MP04388 TA1121A 10dBm 45MHz) TA1121A

    Untitled

    Abstract: No abstract text available
    Text: 1/1 Multilayer Chip Phase Shifters(Delay Lines) For DCS/PCS Conformity to RoHS Directive DEA Series DEA101910DT-6017A1 SHAPES AND DIMENSIONS 0.3±0.1 3 1 1 2 3 4 IN GND OUT GND 0.12±0.07 2 0.12±0.07 TERMINAL FUNCTIONS 0.52max. 0.5±0.05 1.0±0.05 4 0.3±0.1


    Original     		PDF DEA101910DT-6017A1 52max. 1910MHz] 93deg. 824MHz 92degrees 915MHz 24degreedB

    FB2520

    Abstract: ACX Multilayer Chip Min27 ACX balun ACX filter ACX band pass multilayer GHz
    Text: ACX FB2520 Series Advanced Ceramic X Multilayer Chip Band Pass Filter + Balun Features ™ Monolithic SMD with small, low-profile and light-weight type. Applications ™0.8 ~ 6 GHz wireless communication systems, including DECT/PACS/PHS/GSM/DCS phones, WLAN card,


    Original     		PDF FB2520 FB25203400 05L3R5B_ 720MHz 1152MHz 2160MHz 2880MHz 4320MHz 50pedance/2 E5071B ACX Multilayer Chip Min27 ACX balun ACX filter ACX band pass multilayer GHz

    LF-U309D7

    Abstract: GSM duplexer GPS LTE filter band 13 lte saw filter tx saw LTE 5760MHZ
    Text: SAW Filter Modules SAW Filter Modules LF-U309D7 Features • Miniature size of 5.0x4.0x1.0mm • SP10T RF Switch, Duplexer BAND1, BAND5+18 GSM Rx BPF 3 Band, GSM Tx LPF Low/ High Band • UMTS1−3 Pin for Duplexer Applications • Frontend for 3G/ LTE Mobile Phone


    Original     		PDF LF-U309D7 SP10T GSM1800/ 50ohm 50ohm LF-U309D7 GSM duplexer GPS LTE filter band 13 lte saw filter tx saw LTE 5760MHZ

    PIC16F877A circuit diagram

    Abstract: d 1649 D500
    Text: "High Frequency Ceramic Solutions" 1.9 GHz Band Pass Filter P/N 1906BP18A027 Detail Specification: 12/21/03 Page 1 of 2 General Specifications Part Number Frequency MHz Insertion Loss Return Loss Attenuation (min.) Attenuation (min.) Attenuation (min.) Attenuation (min.)


    Original     		PDF 1906BP18A027 5760MHz PIC16F877A circuit diagram d 1649 D500

    DEA101910DT-6017A1

    Abstract: No abstract text available
    Text: 1/2 積層チップフェーズシフタ（ディレイライン） DCS/PCS用 RoHS指令対応製品 DEA シリーズ DEA101910DT-6017A1 形状・寸法 2 0.12±0.07 0.3±0.1 0.35±0.1 0.12±0.07 3 1 0.5±0.05 0.52max. 0.3±0.1 1.0±0.05 4 Terminal functions


    Original     		PDF DEA101910DT-6017A1 52max. 1910MHz] 93deg. 2002/95/EC dea101910dt 824MHz 92degrees DEA101910DT-6017A1

    DEA101910DT-6017A1

    Abstract: No abstract text available
    Text: 1/2 持蚊薮頭卞㌢匂 （决岳㌔） DCS/PCS喘 RoHS峺綜斤哘恢瞳 DEA 狼双 DEA101910DT-6017A1 侘彜・樫雁 2 0.12±0.07 0.3±0.1 0.35±0.1 0.12±0.07 3 1 0.5±0.05 0.52max. 0.3±0.1 1.0±0.05 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND Dimensions in mm


    Original     		PDF DEA101910DT-6017A1 52max. 1910MHz] 93deg. 2002/95/EC dea101910dt 824MHz 92degrees DEA101910DT-6017A1

    Untitled

    Abstract: No abstract text available
    Text: 1/2 Multilayer Chip Phase Shifters(Delay Lines) For DCS/PCS Conformity to RoHS Directive DEA Series DEA101910DT-6017A1 SHAPES AND DIMENSIONS 0.52max. 2 0.12±0.07 0.3±0.1 0.35±0.1 0.3±0.1 0.12±0.07 3 1 0.5±0.05 1.0±0.05 4 Terminal functions 1 IN 2 GND


    Original     		PDF DEA101910DT-6017A1 52max. 1910MHz] 93deg. 1910MHz 1920MHz 2170MHz 3420MHz

    Untitled

    Abstract: No abstract text available
    Text: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache


    OCR Scan     		PDF DM4M32SJ6 454-Gbyte/sec DM4M32SJ

    U32A2

    Abstract: PIR D 203 S 4MBx32 B135n sb136 ti2048
    Text: Enhanced Memory Systems Inc. DM4M32SJ6MultibankEDO 4Mbx32EnhancedDRAMSIMM Product Specification Features Architecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache ■ 30ns DRAM Array for Fast Random Access to Any Page


    OCR Scan     		PDF 454-Gbyte/sec DM4M32SJ6MultibankEDO 4Mbx32EnhancedDRAMSIMM DM4M32SJ 28-pin DM4M32SJ6 U32A2 PIR D 203 S 4MBx32 B135n sb136 ti2048