Untitled
Abstract: No abstract text available
Text: Transistors IMD8A IMD9A 94S-902-AC144T (94S-904-AC114Y) 581
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94S-902-AC144T)
94S-904-AC114Y)
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BFS17
Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
D-74025
bfs17 Vishay
702 TRANSISTOR sot-23
85038
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BFS17
Abstract: BFS17R BFS17W BFS17 E1
Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
BFS17 E1
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silicon npn planar rf transistor sot 143
Abstract: 556 national BFR92A BFR92AR BFR92A P2 Microelectronic sot 236 CB
Text: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 13 581
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BFR92A/BFR92AR
BFR92A
BFR92AR
D-74025
31-Oct-97
silicon npn planar rf transistor sot 143
556 national
BFR92A P2
Microelectronic
sot 236 CB
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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BFR93A application board
Abstract: Temic 3 x 7 597 telefunken diodes 914 Temic Semiconductors bfr93a BFR93A BFR93AR 682 MARKING SOT-23
Text: BFR93A/BFR93AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581
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BFR93A/BFR93AR
BFR93A
BFR93AR
D-74025
31-Oct-97
BFR93A application board
Temic 3 x 7 597
telefunken diodes 914
Temic Semiconductors bfr93a
682 MARKING SOT-23
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BF569
Abstract: BF569R
Text: BF569/BF569R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BF569/BF569R
BF569
BF569R
D-74025
31-Oct-97
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"marking E1"
Abstract: BFS17 BFS17R BFS17W
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
"marking E1"
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Untitled
Abstract: No abstract text available
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
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BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
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NPN general purpose silicon transistors
Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)
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94S-830-AC115E)
96-458-AC124T)
IMD10A
96-555-IMD10)
IMD16A
96-473-IMD16)
94S-902-AC144T)
94S-904-AC114Y)
2SA1036K
2SC411K
NPN general purpose silicon transistors
Transistors General
UMZ1N
transistor 526
c114e
transistors
C124E
dual npn 500ma
581 PNP
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 581 Devices Qualified Level 2N4237 2N4238 2N4239 JANTX JANTXV MAXIMUM RATINGS TA = 250C Unless Otherwise noted Ratings Symbol 2N4237 2N4238 2N4239 Units Collector-Emitter Voltage
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MIL-PRF-19500/
2N4237
2N4238
2N4239
2N4237
2N4238
2N4239
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2N4239
Abstract: 2N4237 2N4238
Text: TECHNICAL DATA NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 Devices Qualified Level 2N4237 2N4238 JAN JANTX JANTXV 2N4239 MAXIMUM RATINGS TA = 250C Unless Otherwise noted Ratings Symbol 2N4237 2N4238 2N4239 Units Collector-Emitter Voltage
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MIL-PRF-19500/581
2N4237
2N4238
2N4239
2N4237
2N4238
2N4239
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2N4338 substitution
Abstract: 2N4237 2N4238 2N4239 C-2688 MIL-PRF19500 2n4234 equivalent
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 10 December 1999. INCH-POUND MIL-PRF-19500/581A 10 September 1999 SUPERSEDING MIL-S-19500/581 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
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MIL-PRF-19500/581A
MIL-S-19500/581
2N4237,
2N4238
2N4239
MIL-PRF-19500.
2N4338 substitution
2N4237
C-2688
MIL-PRF19500
2n4234 equivalent
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NE213
Abstract: BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL
Text: NEUTRON SINGLE EVENT UPSETS IN SRAM-BASED FPGAs* Mattias Ohlsson Peter Dyreklev Karin Johansson Ericsson Saab Avionics AB Electromagnetic Technology Division 581 88 Linköping, Sweden and Peter Alfke Xilinx, Inc. 2100 Logic Drive, San Jose CA 95124, USA Abstract
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NE213
BC501
XC4010E
scintillator
PLCC84 package
transistor BC501
A274
A292
PLCC84
XC4010XL
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Untitled
Abstract: No abstract text available
Text: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document
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DSH000145
003EN
HAL57x,
HAL58x
002EN.
HAL579
O92UA-1
O92UA-2
HAL573.
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Untitled
Abstract: No abstract text available
Text: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document
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DSH000145
003EN
HAL57x,
HAL58x
002EN.
HAL579
O92UA-1
O92UA-2
HAL573.
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smd code Hall
Abstract: HAL 579 magnetic sensor circuit diagram 579K HAL57x DSH000145 HAL573 HAL574 HAL575 HAL576
Text: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document
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DSH000145
003EN
HAL57x,
HAL58x
002EN.
HAL579
O92UA-1
O92UA-2
HAL573.
smd code Hall
HAL 579
magnetic sensor circuit diagram
579K
HAL57x
HAL573
HAL574
HAL575
HAL576
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NEC PS2581
Abstract: PS2581
Text: DATA SHEET PHOTOCOUPLER PS2581L1 ,PS2581 L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2 581 L1 , P S 2 581 L2 are o p tica lly co u p le d iso lato rs c o n ta in in g a G aA s light em ittin g d io d e and an NPN
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OCR Scan
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PS2581L1
PS2581
112/VDE
NEC PS2581
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Nec b 616
Abstract: 2SK1581
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S K 1 581 N-CHAIMNEL MOS FET FOR SWITCHING
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2SK1581,
Nec b 616
2SK1581
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optocoupler a 3131
Abstract: optocoupler 3131 RM8 ferrite core 3131 optocoupler
Text: y [applica tio n ^ UNITRÜDE available | UCCI 581 UCC2581 UCC3581 Micropower Voltage Mode PWM FEATURES BLOCK DIAGRAM • Low 85 j.A Startup Current • Low 300|iA Operating Current • Automatically Disabled Startup Preregulator • Programmable Minimum Duty
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UCC2581
UCC3581
UCC3581
1600mH/1000Tum2.
UCC1581
optocoupler a 3131
optocoupler 3131
RM8 ferrite core
3131 optocoupler
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Untitled
Abstract: No abstract text available
Text: y UCCI 581 UCC2581 UCC3581 PRELIMINARY U N IT R O D E Micropower Voltage Mode PWM FEATURES Low 85nA Startup Current Low 300|iA Operating Current Automatically Disabled Startup Preregulator Programmable Minimum Duty Cycle with Cycle Skipping Programmable Maximum
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UCC2581
UCC3581
UCC3581
1600mH/1000Turn2.
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