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Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam	OCR Scan	PDF	Q010402 KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 22fiF 130ns 58256BN-
Untitled Abstract: No abstract text available Text: 58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam sung KM M 58256BN consist of two 1M bit DRAMs	OCR Scan	PDF	KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 58256BN- 130ns 150ns
44C256BJ Abstract: O-256K KMM58256BN Text: 58256BN DRAM MODULES 256KX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam sung KM M 58256BN consist of two 1M bit DRAMs KM 44C256BJ - 2 5 6 K X 4 in 20-pin SOJ packages	OCR Scan	PDF	KMM58256BN 256KX8 58256BN 44C256BJ 20-pin 30-pin KMM58256BN- O-256K KMM58256BN
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A