Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    5B00 Search Results

    5B00 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8A34045B-000NLG# Renesas Electronics Corporation Multichannel DPLL / DCO - Two / Eight Channels Visit Renesas Electronics Corporation
    5P49V5925B000NLGI8 Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator Visit Renesas Electronics Corporation
    8A34045B-000NLG Renesas Electronics Corporation Multichannel DPLL / DCO - Two / Eight Channels Visit Renesas Electronics Corporation
    5P49V5935B000LTGI Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator with Integrated Crystal Visit Renesas Electronics Corporation
    5P49V5935B000LTGI8 Renesas Electronics Corporation VersaClock® 5 Low Power Programmable Clock Generator with Integrated Crystal Visit Renesas Electronics Corporation
    SF Impression Pixel

    5B00 Price and Stock

    Pulse Electronics Corporation BSCQ000603032N5B00

    INDUCTOR RF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSCQ000603032N5B00 Digi-Reel 115,800 1
    • 1 $0.1
    • 10 $0.024
    • 100 $0.0185
    • 1000 $0.01439
    • 10000 $0.01301
    		Buy Now
    BSCQ000603032N5B00 Cut Tape 115,800 1
    • 1 $0.1
    • 10 $0.024
    • 100 $0.0185
    • 1000 $0.01439
    • 10000 $0.01301
    		Buy Now
    BSCQ000603032N5B00 Reel 105,000 15,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Sager BSCQ000603032N5B00 60,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Suzhou Good-Ark Electronics Co Ltd GSEC15B006

    TVS DIODE 15VWM 24VC SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GSEC15B006 Reel 15,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07758
    		Buy Now

    Johanson Technology Inc 0434BM15B0027001E

    BALUN 431MHZ-437MHZ 50 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0434BM15B0027001E Digi-Reel 3,970 1
    • 1 $0.64
    • 10 $0.553
    • 100 $0.4773
    • 1000 $0.41437
    • 10000 $0.41437
    		Buy Now
    0434BM15B0027001E Cut Tape 3,970 1
    • 1 $0.64
    • 10 $0.553
    • 100 $0.4773
    • 1000 $0.41437
    • 10000 $0.41437
    		Buy Now

    Silicon Laboratories Inc SI7215-B-00-IVR

    SENSOR HALL EFFECT SENT SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7215-B-00-IVR Cut Tape 2,959 1
    • 1 $0.84
    • 10 $0.84
    • 100 $0.6056
    • 1000 $0.51412
    • 10000 $0.51412
    		Buy Now

    Cree, Inc. XHP35B-00-0000-0D0BE20E1

    LED XLAMP COOL WHITE 6500K SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XHP35B-00-0000-0D0BE20E1 Cut Tape 1,625 1
    • 1 $5.08
    • 10 $4.826
    • 100 $4.318
    • 1000 $3.92685
    • 10000 $3.92685
    		Buy Now
    XHP35B-00-0000-0D0BE20E1 Digi-Reel 1,625 1
    • 1 $5.08
    • 10 $4.826
    • 100 $4.318
    • 1000 $3.92685
    • 10000 $3.92685
    		Buy Now
    XHP35B-00-0000-0D0BE20E1 Reel 1,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.39002
    • 10000 $3.39002
    		Buy Now
    Avnet Americas XHP35B-00-0000-0D0BE20E1 Reel 500 6 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.5864
    • 10000 $2.5864
    		Buy Now
    Find more 5B00 price and stock on Findchips.com

    5B00 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EMX-5B00L

    Abstract: EMX-5B06L BUZZER 12V AWG28 P1004 EMX-5B24L EMX-5B01L
    Text: EMX-5B00L Magnetic transducer Buzzer EMX-5B00L Series FEATURES: ● Low current consumption ● Compact Rich sound ● DIMENSIONS: Unit: mm CHARACTERISTICS: ELECTRICAL SPECIFICATIONS : Model No. EMX-5B01L Min. Sound Pressure Level (dB) Max. Consumption (mA)


    Original     		EMX-5B00L EMX-5B00L EMX-5B01L EMX-5B06L EMX-5B12L 20/24V AWG28) EMX-5B24L BUZZER 12V AWG28 P1004 EMX-5B24L EMX-5B01L PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742F – JUNE 2011 – REVISED APRIL 2013 Concerto Microcontrollers Check for Samples: F28M35H52C 1 F28M35x Concerto MCUs 1.1 Features • Master Subsystem — ARM Cortex™-M3


    Original     		F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B SPRS742F F28M35H52C F28M35x 512KB PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    Untitled

    Abstract: No abstract text available
    Text: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742G – JUNE 2011 – REVISED AUGUST 2013 Concerto Microcontrollers Check for Samples: F28M35H52C, F28M35H22C, F28M35M52C, F28M35M22C, F28M35M20B, F28M35E20B 1 F28M35x Concerto MCUs


    Original     		F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B SPRS742G F28M35H22C, PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		Am29LV6402M S29GL128N 110R PDF

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000 PDF

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


    Original     		Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00 PDF

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112 PDF

    LHF12F16

    Abstract: wp 146 LH28F128BFHT-PTTL75A
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A PDF

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 PDF

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


    Original     		MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 PDF

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh PDF

    M25PX64

    Abstract: No abstract text available
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an


    Original     		M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64 PDF

    FTA073

    Abstract: No abstract text available
    Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am50DL128BH FTA073--73-Ball FTA073 PDF

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 PDF

    Untitled

    Abstract: No abstract text available
    Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum


    Original     		M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year PDF

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original     		M29DW640F TSOP48 24Mbit PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original     		16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    4kw marking

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0307 4kw marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.


    Original     		Am29DL640D 16-Bit) 256od) PDF