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    5B4 DIODE Search Results

    5B4 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    5B4 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


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    PDF MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763

    OZ960

    Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED


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    PDF MPC7450 OZ960 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode

    diode 6a6

    Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
    Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503


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    PDF DS26503DK DS26503DK DS26503 DS26503 MMC2107 CY62128V XC2S50 MAX1792 diode 6a6 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10

    smd transistor 6c5

    Abstract: 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1
    Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503


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    PDF DS26503DK DS26503DK DS26503 DS26503 MMC2107 CY62128V XC2S50 MAX1792 smd transistor 6c5 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1

    7B423

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION PI74ALVTC16344


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    PDF PI74ALVTC16344 PI74ALVTC16344 32/64mA 7B423

    sk10DGDL

    Abstract: 3 phase inverter brake chopper B444 1 PHASE INVERTER BRIDGE semikron 22
    Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 012 # #67 0$12 !+ ,-./        Values ! + ,- 54 . #67+ ,  #/  + 3  !: Units 3,44 3- 33 38 9,4 % % ;<4 = >3-4


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    6B4 diode

    Abstract: diode 7B4 PI74ALVTC16344A PI74ALVTC16344K
    Text: PI74ALVTC16344


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    PDF PI74ALVTC16344 PI74ALVTC16344 32/64mA 56-pin PI74ALVTC16344A PI74ALVTC16344K PS8616 6B4 diode diode 7B4 PI74ALVTC16344A PI74ALVTC16344K

    Untitled

    Abstract: No abstract text available
    Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 012 # #67 0$12 !+ ,-./        Values ! + ,- 54 . #67+ ,  #/  + 3  !: Units 3,44 3- 33 38 9,4 % % ;<4 = >3-4


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    Untitled

    Abstract: No abstract text available
    Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 012 # #67 0$12 !+ ,-./        Values ! + ,- 54 . #67+ ,  #/  + 3  !: Units 3,44 3- 33 38 9,4 % % ;<4 = >3-4


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    6A6 DIODE

    Abstract: RJ48 DS26504 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5
    Text: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a


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    PDF DS26504DK T1/E1/J1/64K/8KCC DS26504DK DS26504 MMC2107 CY62128V 6A6 DIODE RJ48 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5

    XCF01SV020

    Abstract: 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor
    Text: DS26502DK T1/E1/J1/64KCC Bits Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26502DK is an easy-to-use evaluation board for the DS26502 T1/E1/J1/64KCC BITS element. The DS26502DK is intended to be used as a standalone design kit. The board is complete with a


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    PDF DS26502DK T1/E1/J1/64KCC DS26502DK DS26502 MMC2107 CY62128V XCF01SV020 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor

    diode 6a6

    Abstract: C65 004 5d4 diode MAX1675 12b3 diode smd 5b1 5B1 smd transistor rj48 to db9 IO103 smd transistor 6c5
    Text: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a


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    PDF DS26504DK T1/E1/J1/64K/8KCC DS26504DK DS26504 MMC2107 CY62128V diode 6a6 C65 004 5d4 diode MAX1675 12b3 diode smd 5b1 5B1 smd transistor rj48 to db9 IO103 smd transistor 6c5

    semikron SK

    Abstract: B444 semikron bridge rectifier sk
    Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper 012 # #67 0$12 !+ ,-./        Values ! + ,- 54 . #67+ ,  #/  + 3  !: Units 3,44 3- 33 38 9,4 % % ;<4 = >3-4


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    5b4 diode

    Abstract: 5B4 IR BAT74 SCHOTTKY DIODE SOT-143 FI SOT-143
    Text: m bb53T31 Ü0BM3M7 5b4 H A P X N AMER PH ILIPS/DISCRETE BAT74 b?E D SCHOTTKY BARRIER DIODE Tw o separate silicon epitaxial Schottky barrier diodes w ith an integrated p-n junction protection ring in one microminiature SO T-143 envelope, intended for surface mounting SMD technology .


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    PDF bb53131 BAT74 OT-143 00243MT 5b4 diode 5B4 IR BAT74 SCHOTTKY DIODE SOT-143 FI SOT-143

    NDL5653P

    Abstract: NDL5600 NDL5600D NDL5600D1 NDL5604P NDL5650 NDL5650D1 NEC LASER DIODE PIN DIP 10 gb laser diode 5b4 diode
    Text: N E C L.2E T> ELECTRONICS INC NEC b4Z7S2S D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE D ES C R IP TIO N N D L5653P is a 1 550 nm phase-shifted DPB Distributed Feed-Back laser diode B utterfly package module with optical isola­


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    PDF b427S2S NDL5653P NDL5653P incorporates5650 NDL5600D ndl5650d NDL5600D1 NDL5650D1 NDL5604P NDL5654P NDL5600 NDL5650 NEC LASER DIODE PIN DIP 10 gb laser diode 5b4 diode

    Untitled

    Abstract: No abstract text available
    Text: Ö U A L IT Y S E M I C O N D U C T O R INC bSE » • 7 4 b b ñ 0 3 D G 0 1 1 3 Q 5b4 QS29FCT520T, 521T, 2520T, 2521T Q QS29FCT520T Q S29FCT521T High Speed CMOS Multilevel Pipeline Registers Q S29FCT2520T Q S29FCT2521T FEATURES/BENEFITS • ■ • • Pin and function compatible to the Am29520


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    PDF QS29FCT520T, 2520T, 2521T QS29FCT520T S29FCT521T S29FCT2520T S29FCT2521T Am29520 MIL-STD-883 FCT-T520T/1T

    TS802C09

    Abstract: ze 003 ic
    Text: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics


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    PDF TS802C09 500ns, 00D3b72 TS802C09 ze 003 ic

    3RW2.5

    Abstract: No abstract text available
    Text: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES REVERSE RECOVERY TIME EDI Type PRV Volts 3W2 2,000 not applicable 3W2.5 2,500 not applicable 3W3 3,000 not applicable 3RW2 2,000 250 ns max. 3RW2.5 2,500 250 ns max. 3RW3 3,000 250 ns max.


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    PDF 0b7b743 00012R 3RW2.5

    5B4 diode

    Abstract: FLD130F2RH lnp 2.4 FLD13 DFB 1300 rise time
    Text: InGaAsP/lnP DFB LASER DIODE ^ • fld FEATURES • High speed response: 0.1 nsec. • Stable single longitudinal mode operation • High side mode suppression ratio: 33 dB • Low threshold current: 20 mA • Long life and high reliability A P P L IC A T IO N S


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    PDF FLD130F2RH 5B4 diode lnp 2.4 FLD13 DFB 1300 rise time

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS


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    PDF 10-mA Pfl140/1 b7E4240 b7242L

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 SIS00025 C67070-A2017-A70 siemens igbt chip
    Text: SIEMENS BSM 300 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code BSM 300 G A 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A


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    PDF C67076-A2007-A70 C67070-A2017-A70 023SbGS fl235b05 SIS00025 235bOS 0Qfi02b3 SIS00041 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 siemens igbt chip

    5B4 IR

    Abstract: oki Photo MOS Relay OCM110 OCM111 OCM120 OCM121 0CM110
    Text: O K I electronic components OCM 1X0, 1X1 S E R IE S Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM 1XI Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS


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    PDF 10-mA b7242HD 5B4 IR oki Photo MOS Relay OCM110 OCM111 OCM120 OCM121 0CM110

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS 1-BITTO 4-BIT ADDRESS DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,


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    PDF 250ps MIL-STD-883, 200pF, 635mm ALVCH162344 IDT74ALVCH162344

    74F573

    Abstract: 74FCT573T 74LVT573 QS74FCT32573 QS74FCT3573
    Text: QSFCT3573, 32573 PRELIMINARY 3.3 Volt CMOS Bus Interface 8-Bit Latches Q QS74FCT3573 QS74FCT32573 FEATURES/BENEFITS • Pin and function compatible to the 74F573 74LVT573 and 74FCT573T • Available in SOIC and QSOP • Undershoot clamp diodes on all inputs


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    PDF QSFCT3573, QS74FCT3573 QS74FCT32573 74LVT573 74FCT573T 74F573 QSFCT3573 FCT3573 FCT32573 74F573 74FCT573T QS74FCT32573