SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
|
Original
|
PDF
|
KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
|
CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
|
SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
|
Original
|
PDF
|
S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
|
Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
|
740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
|
Original
|
PDF
|
EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
|
110R
Abstract: S29GL128N
Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this
|
Original
|
PDF
|
Am29LV6402M
S29GL128N
110R
|
M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
|
Original
|
PDF
|
M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
|
M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
|
Original
|
PDF
|
Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
|
P-TFBGA63-0911-0
Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
|
Original
|
PDF
|
TC58FVT641/B641FT/XB-70
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
P-TFBGA63-0911-0
BA102
PTFBGA-63
diode ba102
BA119
B641
BA95
BA112
|
HDMP 1034 AG
Abstract: HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16
Text: Released Datasheet PMC-Sierra, Inc. Long Form Data Sheet PMC-980618 Issue 3 PM73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Released Issue 3: JUN 1999 Released Datasheet PMC-Sierra, Inc. PMC-980618
|
Original
|
PDF
|
PMC-980618
PM73487
PM73487
PMC-981001
HDMP 1034 AG
HDMP-1032
AMCC DATE CODE MARKING
AMCC 460, DATE CODE
4X511
sg ag20
AF2-2
hdmp 1032 1034
marking M29
TRANSISTOR AH-16
|
LHF12F16
Abstract: wp 146 LH28F128BFHT-PTTL75A
Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
|
Original
|
PDF
|
LH28F128BFHT-PTTL75A
LHF12F16)
FM046010
LHF12F16
LHF12F16
wp 146
LH28F128BFHT-PTTL75A
|
BA102
Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
|
Original
|
PDF
|
TH50VSF3680/3681AASB
TH50VSF3680/3681AASB
608-bit
864-bit
69-pin
3/3681AASB
XXXh/60h)
BPA/60h)
BA102
diode ba102
diode ba103
TH50VSF3680AASB
A12F
TH50VSF3681AASB
BA41
BA96
|
MX29LV640D
Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales
|
Original
|
PDF
|
MX29LV640D
MX29LV640E
MX29LV640E
PM1208
64M-BIT
A0-A21
Q0-Q15
MX29LV640DT
0001111XXX
MX29LV640DBTC-90G
1000010XXX
|
MX29LV640ebt
Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
|
Original
|
PDF
|
MX29LV640E
64M-BIT
128-word
MX29LV640ebt
MX29LV640EB
MX29LV640EBTI-70G
29LV640
mx29lv640etti
MX29LV640ETTI-70G
A0-A21
Q0-Q15
PM-132
|
|
|
M25PX64
Abstract: No abstract text available
Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an
|
Original
|
PDF
|
M25PX64
64-Mbit,
64-Kbyte
64-byte
M25PX64
|
FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am50DL128BH
FTA073--73-Ball
FTA073
|
AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
PDF
|
Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
|
Untitled
Abstract: No abstract text available
Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum
|
Original
|
PDF
|
M25P64
50MHz
64Mbit
512Kbit)
64Mbit)
2017h)
20-Year
|
Untitled
Abstract: No abstract text available
Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words
|
Original
|
PDF
|
M29DW640F
TSOP48
24Mbit
|
A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
|
Original
|
PDF
|
16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
|
4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0307
4kw marking
|
Untitled
Abstract: No abstract text available
Text: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012
|
Original
|
PDF
|
A25LQ64
64M-BIT
16-pin
300mil)
209mil)
Figure-36-1,
|
Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
|
Original
|
PDF
|
Am29DL640D
16-Bit)
256od)
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
|
Original
|
PDF
|
Am29LV640MH/L
16-Bit/8
128-word/256-byte
8-word/16-byte
TS056
TSR056
0004h
0001h
|
